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A new 1-bit digital comparator named 14T-SR-GDI is presented with gate-diffusion-input (GDI) and single-swing-restoration (SR) techniques to attain internal gates with high driving capability. The comparator has 14 transistors which produce full-swing outputs with low power consumption. In the 14T-SR-GDI, boosted inner signals are used to activate the output gates which result in a high-speed circuit with effective scalability and the enhanced driving capability for multi-bit structures. The comparator has a low power delay product (PDP) due to the small numbers of internal nodes and capacitances and efficient power-ground-free gates. The 14T-SR-GDI comparator, fully SR-GDI-based AND, and OR gates, construct a new tree structure for multi-bit magnitude comparators including 2-bit, 4-bit, 8-bit, and 16-bit comparators. The proposed 1-bit comparator is used in image processing for difference detection, and its efficiency is proved by image quality parameters. The post-layout simulations are performed for the 1-bit to 16-bit structures under TSMC 90 nm technology. The extracted results express a PDP with an average difference of 9.59% between the regular and post-layout modes. Also, the proposed 16-bit comparator is embedded in a pad with a total area of 4331.25 μm2. The designed magnitude comparators are key components in digital signal processors (DSPs). [ABSTRACT FROM AUTHOR]

Summary: The performance of the programmable integrated circuits (ICs) like digital signal processors (DSPs), central processing units (CPUs), and microcontrollers is highly dependent on the magnitude comparators. This article presents a new reliable and efficient 1‐bit comparator based on carbon nanotube field‐effect transistors (CNTFETs) technology. The gate diffusion input (GDI) technique is used to reduce the number of transistors. Also, single swing restoration (SR) transistors and transmission gate (TG) techniques are combined to attain full‐swing outputs with high driving capability. The low internal capacitances and the fewer number of internal nodes of the proposed comparator make it low‐power both in single‐bit and multibit (2‐bit, 4‐bit, 8‐bit, and 16‐bit) implementations. Variations analyses of the circuit and technology parameters are performed that show the cell efficiency. From the layout results, the 1‐bit and 16‐bit comparators occupy 0.1944 μm2 and 37.485 μm2 as the total die area, respectively. The proposed circuit is implemented in image processing in which the best performance compared with state‐of‐the‐art designs regarding hardware complexity, circuitry performance, and image quality assessments are confirmed, by at least 50% improvements of different critical parameters. The resulted figure of merits nominates the cell for future ICs. [ABSTRACT FROM AUTHOR]