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Volatile memristors have recently gained popularity as promising devices for neuromorphic circuits, capable of mimicking the leaky function of neurons and offering advantages over capacitor-based circuits in terms of power dissipation and area. Additionally, volatile memristors are useful as selector devices and for hardware security circuits such as physical unclonable functions. To facilitate the design and simulation of circuits, a compact behavioral model is essential. This paper proposes V-VTEAM, a compact, simple, general, and flexible behavioral model for volatile memristors, inspired by the VTEAM nonvolatile memristor model and developed in MATLAB. The validity of the model is demonstrated by fitting it to an ion drift/diffusion-based Ag/SiOx/C/W volatile memristor, achieving a relative root mean error square of 4.5%., Comment: 4 pages, 4 figures, 1 table, to be published in proceedings of 2024 International Flexible Electronics Technology Conference (IFETC 2024)

The execution of deep neural network (DNN) algorithms suffers from significant bottlenecks due to the separation of the processing and memory units in traditional computer systems. Emerging memristive computing systems introduce an in situ approach that overcomes this bottleneck. The non-volatility of memristive devices, however, may expose the DNN weights stored in memristive crossbars to potential theft attacks. Therefore, this paper proposes a two-dimensional permutation-based protection (TDPP) method that thwarts such attacks. We first introduce the underlying concept that motivates the TDPP method: permuting both the rows and columns of the DNN weight matrices. This contrasts with previous methods, which focused solely on permuting a single dimension of the weight matrices, either the rows or columns. While it's possible for an adversary to access the matrix values, the original arrangement of rows and columns in the matrices remains concealed. As a result, the extracted DNN model from the accessed matrix values would fail to operate correctly. We consider two different memristive computing systems (designed for layer-by-layer and layer-parallel processing, respectively) and demonstrate the design of the TDPP method that could be embedded into the two systems. Finally, we present a security analysis. Our experiments demonstrate that TDPP can achieve comparable effectiveness to prior approaches, with a high level of security when appropriately parameterized. In addition, TDPP is more scalable than previous methods and results in reduced area and power overheads. The area and power are reduced by, respectively, 1218$\times$ and 2815$\times$ for the layer-by-layer system and by 178$\times$ and 203$\times$ for the layer-parallel system compared to prior works., Comment: 14 pages, 11 figures

Processing-in-memory (PIM) is attractive to overcome the limitations of modern computing systems. Numerous PIM systems exist, varying by the technologies and logic techniques used. Successful operation of specific logic functions is crucial for effective processing-in-memory. Memristive non-stateful logic techniques are compatible with CMOS logic and can be integrated into a 1T1R memory array, similar to commercial RRAM products. This paper analyzes and demonstrates two non-stateful logic techniques: 1T1R logic and scouting logic. As a first step, the used 1T1R SiO\textsubscript{x} valence change mechanism memristors are characterized in reference to their feasibility to perform logic functions. Various logical functions of the two logic techniques are experimentally demonstrated, showing correct functionality in all cases. Following the results, the challenges and limitations of the RRAM characteristics and 1T1R configuration for the application in logical functions are discussed., Comment: 5 pages, 6 figures

The emerging Spin Transfer Torque Magnetic Tunnel Junction (STT-MTJ) technology exhibits interesting stochastic behavior combined with small area and low operation energy. It is, therefore, a promising technology for security applications, specifically the generation of random numbers. In this paper, STT-MTJ is used to construct an asynchronous true random number generator (TRNG) with low power and a high entropy rate. The asynchronous design enables decoupling of the random number generation from the system clock, allowing it to be embedded in low-power devices. The proposed TRNG is evaluated by a numerical simulation, using the Landau-Lifshitz-Gilbert (LLG) equation as the model of the STT-MTJ devices. Design considerations, attack analysis, and process variation are discussed and evaluated. We show that our design is robust to process variation, achieving an entropy generating rate between 99.7Mbps and 127.8Mbps with 6-7.7 pJ per bit for 90% of the instances., Comment: Published in: IEEE Transactions on Very Large Scale Integration (VLSI) Systems ( Volume: 27, Issue: 11, November 2019)

Stateful logic is a digital processing-in-memory technique that could address von Neumann memory bottleneck challenges while maintaining backward compatibility with standard von Neumann architectures. In stateful logic, memory cells are used to perform the logic operations without reading or moving any data outside the memory array. Stateful logic has been previously demonstrated using several resistive memory types, mostly by resistive RAM (RRAM). Here we present a new method to design stateful logic using a different resistive memory - phase change memory (PCM). We propose and experimentally demonstrate four logic gate types (NOR, IMPLY, OR, NIMP) using commonly used PCM materials. Our stateful logic circuits are different than previously proposed circuits due to the different switching mechanism and functionality of PCM compared to RRAM. Since the proposed stateful logic form a functionally complete set, these gates enable sequential execution of any logic function within the memory, paving the way to PCM-based digital processing-in-memory systems.

Neural network (NN) algorithms have become the dominant tool in visual object recognition, natural language processing, and robotics. To enhance the computational efficiency of these algorithms, in comparison to the traditional von Neuman computing architectures, researchers have been focusing on memristor computing systems. A major drawback when using memristor computing systems today is that, in the artificial intelligence (AI) era, well-trained NN models are intellectual property and, when loaded in the memristor computing systems, face theft threats, especially when running in edge devices. An adversary may steal the well-trained NN models through advanced attacks such as learning attacks and side-channel analysis. In this paper, we review different security techniques for protecting memristor computing systems. Two threat models are described based on their assumptions regarding the adversary's capabilities: a black-box (BB) model and a white-box (WB) model. We categorize the existing security techniques into five classes in the context of these threat models: thwarting learning attacks (BB), thwarting side-channel attacks (BB), NN model encryption (WB), NN weight transformation (WB), and fingerprint embedding (WB). We also present a cross-comparison of the limitations of the security techniques. This paper could serve as an aid when designing secure memristor computing systems., Comment: 15 pages, 5 figures

The von Neumann architecture, in which the memory and the computation units are separated, demands massive data traffic between the memory and the CPU. To reduce data movement, new technologies and computer architectures have been explored. The use of memristors, which are devices with both memory and computation capabilities, has been considered for different processing-in-memory (PIM) solutions, including using memristive stateful logic for a programmable digital PIM system. Nevertheless, all previous work has focused on a specific stateful logic family, and on optimizing the execution for a certain target machine. These solutions require new compiler and compilation when changing the target machine, and provide no backward compatibility with other target machines. In this chapter, we present abstractPIM, a new compilation concept and flow which enables executing any function within the memory, using different stateful logic families and different instruction set architectures (ISAs). By separating the code generation into two independent components, intermediate representation of the code using target independent ISA and then microcode generation for a specific target machine, we provide a flexible flow with backward compatibility and lay foundations for a PIM compiler. Using abstractPIM, we explore various logic technologies and ISAs and how they impact each other, and discuss the challenges associated with it, such as the increase in execution time., Comment: Link to the book chapter in Springer: https://link.springer.com/chapter/10.1007/978-3-030-81641-4_16

Stateful logic is a promising processing-in-memory (PIM) paradigm to perform logic operations using emerging nonvolatile memory cells. While most stateful logic circuits to date focused on technologies such as resistive RAM, we propose two approaches to designing stateful logic using spin orbit torque (SOT) MRAM. The first approach utilizes the separation of read and write paths in SOT devices to perform logic operations. In contrast to previous work, our method utilizes a standard memory structure, and each row can be used as input or output. The second approach uses voltage-gated SOT switching to allow stateful logic in denser memory arrays. We present array structures to support the two approaches and evaluate their functionality using SPICE simulations in the presence of process variation and device mismatch., Comment: Published in 2022 22nd IEEE International Conference on Nanotechnology (NANO)

Emerging memristor computing systems have demonstrated great promise in improving the energy efficiency of neural network (NN) algorithms. The NN weights stored in memristor crossbars, however, may face potential theft attacks due to the nonvolatility of the memristor devices. In this paper, we propose to protect the NN weights by mapping selected columns of them in the form of 1's complements and leaving the other columns in their original form, preventing the adversary from knowing the exact representation of each weight. The results show that compared with prior work, our method achieves effectiveness comparable to the best of them and reduces the hardware overhead by more than 18X., Comment: 6 pages, 4 figures, accepted by IEEE ISVLSI 2022

Bulk-bitwise processing-in-memory (PIM), where large bitwise operations are performed in parallel by the memory array itself, is an emerging form of computation with the potential to mitigate the memory wall problem. This paper examines the capabilities of bulk-bitwise PIM by constructing PIMDB, a fully-digital system based on memristive stateful logic, utilizing and focusing on in-memory bulk-bitwise operations, designed to accelerate a real-life workload: analytical processing of relational databases. We introduce a host processor programming model to support bulk-bitwise PIM in virtual memory, develop techniques to efficiently perform in-memory filtering and aggregation operations, and adapt the application data set into the memory. To understand bulk-bitwise PIM, we compare it to an equivalent in-memory database on the same host system. We show that bulk-bitwise PIM substantially lowers the number of required memory read operations, thus accelerating TPC-H filter operations by 1.6$\times$--18$\times$ and full queries by 56$\times$--608$\times$, while reducing the energy consumption by 1.7$\times$--18.6$\times$ and 0.81$\times$--12$\times$ for these benchmarks, respectively. Our extensive evaluation uses the gem5 full-system simulation environment. The simulations also evaluate cell endurance, showing that the required endurance is within the range of existing endurance of RRAM devices., Comment: published in IEEE Transactions on Emerging Topics in Computing

Memristor-based neuromorphic computing could overcome the limitations of traditional von Neumann computing architectures -- in which data are shuffled between separate memory and processing units -- and improve the performance of deep neural networks. However, this will require accurate synaptic-like device performance, and memristors typically suffer from poor yield and a limited number of reliable conductance states. Here we report floating gate memristive synaptic devices that are fabricated in a commercial complementary metal-oxide-semiconductor (CMOS) process. These silicon synapses offer analogue tunability, high endurance, long retention times, predictable cycling degradation, moderate device-to-device variations, and high yield. They also provide two orders of magnitude higher energy efficiency for multiply-accumulate operations than graphics processing units. We use two 12-by-8 arrays of the memristive devices for in-situ training of a 19-by-8 memristive restricted Boltzmann machine for pattern recognition via a gradient descent algorithm based on contrastive divergence. We then create a memristive deep belief neural network consisting of three memristive restricted Boltzmann machines. We test this on the modified National Institute of Standards and Technology (MNIST) dataset, demonstrating recognition accuracy up to 97.05%.

Y-Flash memristors utilize the mature technology of single polysilicon floating gate non-volatile memories (NVM). It can be operated in a two-terminal configuration similar to the other emerging memristive devices, i.e., resistive random-access memory (RRAM), phase-change memory (PCM), etc. Fabricated in production complementary metal-oxide-semiconductor (CMOS) technology, Y-Flash memristors allow excellent repro-ducibility reflected in high neuromorphic products yields. Working in the subthreshold region, the device can be programmed to a large number of fine-tuned intermediate states in an analog fashion and allows low readout currents (1 nA ~ 5 $\mu$ A). However, currently, there are no accurate models to describe the dynamic switching in this type of memristive device and account for multiple operational configurations. In this paper, we provide a physical-based compact model that describes Y-Flash memristor performance both in DC and AC regimes, and consistently describes the dynamic program and erase operations. The model is integrated into the commercial circuit design tools and is ready to be used in applications related to neuromorphic computation.

Data-intensive applications are poised to benefit directly from processing-in-memory platforms, such as memristive Memory Processing Units, which allow leveraging data locality and performing stateful logic operations. Developing design automation flows for such platforms is a challenging and highly relevant research problem. In this work, we investigate the problem of minimizing delay under arbitrary area constraint for MAGIC-based in-memory computing platforms. We propose an end-to-end area constrained technology mapping framework, CONTRA. CONTRA uses Look-Up Table(LUT) based mapping of the input function on the crossbar array to maximize parallel operations and uses a novel search technique to move data optimally inside the array. CONTRA supports benchmarks in a variety of formats, along with crossbar dimensions as input to generate MAGIC instructions. CONTRA scales for large benchmarks, as demonstrated by our experiments. CONTRA allows mapping benchmarks to smaller crossbar dimensions than achieved by any other technique before, while allowing a wide variety of area-delay trade-offs. CONTRA improves the composite metric of area-delay product by 2.1x to 13.1x compared to seven existing technology mapping approaches., Comment: 9 pages

Quantized neural networks (QNNs) are being actively researched as a solution for the computational complexity and memory intensity of deep neural networks. This has sparked efforts to develop algorithms that support both inference and training with quantized weight and activation values, without sacrificing accuracy. A recent example is the GXNOR framework for stochastic training of ternary (TNN) and binary (BNN) neural networks. In this paper, we show how magnetic tunnel junction (MTJ) devices can be used to support QNN training. We introduce a novel hardware synapse circuit that uses the MTJ stochastic behavior to support the quantize update. The proposed circuit enables processing near memory (PNM) of QNN training, which subsequently reduces data movement. We simulated MTJ-based stochastic training of a TNN over the MNIST, SVHN, and CIFAR10 datasets and achieved an accuracy of 98.61%, 93.99% and 82.71%, respectively (less than 1% degradation compared to the GXNOR algorithm). We evaluated the synapse array performance potential and showed that the proposed synapse circuit can train ternary networks in situ, with 18.3TOPs/W for feedforward and 3TOPs/W for weight update., Comment: Published in Semiconductor Science and Technology, Vol 36