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Abstract The influence of blending ratio on resistive switching effect in donor-acceptor type composite of [6,6]-phenyl-C 61 -butyric acid methyl ester (PCBM) and poly(N -vinylcarbazole) (PVK)-based memory devices are investigated. Current-voltage (I - V) curves for the ITO/PCBM + PVK/Al devices with 9 wt.% of PCBM showed a current bistability with a maximum OFF/ON resistance ratio of 9 × 104, which was 100 times larger than that of the device with 23 wt.% of PCBM and was 2000 times larger than that of the device with 41 wt.% of PCBM. Furthermore, the threshold voltage obviously decreased as the PCBM concentration increases. The retention time was above 105 s indicative of the memory stability of the as-fabricated devices. The I - V characteristics at OFF state dominantly comply with the rules of space-charge-limited-current behaviors, and I - V curve at ON state obey Ohmic laws. The proposed device suggests a promising approach for adjustale OFF/ON resistance ratio and threshold voltage in electronic memory devices. Graphical abstract Image Highlights • The influence of blending ratio on resistive switching effect are investigated. • The threshold voltage obviously decreased as the PCBM concentration increases. • The resistance ratio obviously increased with the PCBM concentration decreases. [ABSTRACT FROM AUTHOR]