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Abstract The influence of blending ratio on resistive switching effect in donor-acceptor type composite of [6,6]-phenyl-C 61 -butyric acid methyl ester (PCBM) and poly(N -vinylcarbazole) (PVK)-based memory devices are investigated. Current-voltage (I - V) curves for the ITO/PCBM + PVK/Al devices with 9 wt.% of PCBM showed a current bistability with a maximum OFF/ON resistance ratio of 9 × 104, which was 100 times larger than that of the device with 23 wt.% of PCBM and was 2000 times larger than that of the device with 41 wt.% of PCBM. Furthermore, the threshold voltage obviously decreased as the PCBM concentration increases. The retention time was above 105 s indicative of the memory stability of the as-fabricated devices. The I - V characteristics at OFF state dominantly comply with the rules of space-charge-limited-current behaviors, and I - V curve at ON state obey Ohmic laws. The proposed device suggests a promising approach for adjustale OFF/ON resistance ratio and threshold voltage in electronic memory devices. Graphical abstract Image Highlights • The influence of blending ratio on resistive switching effect are investigated. • The threshold voltage obviously decreased as the PCBM concentration increases. • The resistance ratio obviously increased with the PCBM concentration decreases. [ABSTRACT FROM AUTHOR]

• The Al/PCBM + PVP/Al memory devices are prepared by spin-coating process. • The memory device exhibits a typical nonvolatile write-once-read-many-times storage effect. • The multistage resistive switching processes in memory device were reported. • The broken processes of carbon-rich conducting filament have been clarified. • The conductance quantization during resistive switching processes was analyzed. Memory devices were prepared by spin-coating process, and the multistage resistive switching behavior has been found in organic coating films-based of memory device. The composite of 6 , 6 -phenyl C 61 -butyric acid methyl ester and polyvinyl pyrrolidone were used as active layer materials. The as-prepared device exhibits a typical nonvolatile write-once-read-many- times storage effect, and shows multistate resistive switching behavior, and there are obvious distinctions between different resistance states. The resistance in low resistance state (LRS) and high resistance state (HRS) dependence on temperature is tested, and the resistance of LRS and HRS show metal and semiconductor characteristics, respectively. As well as, the resistance in HRS shows evident dependence on cell size. Hence, the resistive switching mechanism was attributed to the broken processes of carbon-rich conducting filament. Furthermore, conductance quantization during resistive switching processes was analyzed. This work might make it attractive for exploiting high density data storage. [ABSTRACT FROM AUTHOR]