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A multifunctional resistive switching memory devices with the typical sandwich structure of Al/Poly(4-vinylphenol) (PVP)+2-Amino-5-methyl-1,3,4-thiadiazole/Al is fabricated. Al as the bottom and top electrodes is easy to realize by simple thermal evaporation process, and a PVP and 2-Amino-5-methyl-1,3,4-thiadiazole composite film as the active layer is prepared by sol-gel method and spin coating process. The as-fabricated resistive switching memory device shows write-once-read-many (WORM) and rewritable multifunctional memory behaviors, for the rewritable and WORM memory modes, the ON/OFF ratio is 104 and 80, respectively. The as-fabricated device shows tristable conductivity states which equivalent to "0", "1" and "2", and these three conductance states are steady under the constant voltage retention test, as well as during the endurance test, indicating advantageous features of stable operation and dependable endurance. It is noteworthy that the simple preparation process is expected to promisingly hold the post of industrialization low-cost preparation in future electronic devices for ternary data storage utilities. • A multifunctional resistive switching memory devices was fabricated. • The as-fabricated device shows tristable conductivity states. • It is expected to promisingly hold the post of ternary data storage utilities. [ABSTRACT FROM AUTHOR]

Abstract The influence of blending ratio on resistive switching effect in donor-acceptor type composite of [6,6]-phenyl-C 61 -butyric acid methyl ester (PCBM) and poly(N -vinylcarbazole) (PVK)-based memory devices are investigated. Current-voltage (I - V) curves for the ITO/PCBM + PVK/Al devices with 9 wt.% of PCBM showed a current bistability with a maximum OFF/ON resistance ratio of 9 × 104, which was 100 times larger than that of the device with 23 wt.% of PCBM and was 2000 times larger than that of the device with 41 wt.% of PCBM. Furthermore, the threshold voltage obviously decreased as the PCBM concentration increases. The retention time was above 105 s indicative of the memory stability of the as-fabricated devices. The I - V characteristics at OFF state dominantly comply with the rules of space-charge-limited-current behaviors, and I - V curve at ON state obey Ohmic laws. The proposed device suggests a promising approach for adjustale OFF/ON resistance ratio and threshold voltage in electronic memory devices. Graphical abstract Image Highlights • The influence of blending ratio on resistive switching effect are investigated. • The threshold voltage obviously decreased as the PCBM concentration increases. • The resistance ratio obviously increased with the PCBM concentration decreases. [ABSTRACT FROM AUTHOR]

We report the application of graphene oxide (GO) as the active layer of memory devices. The indium-tin-oxide/GO/Al devices present the ternary write-once-read-many times resistive switching memory, and retain the data information for 3 × 1 0 5 s. In the OFF states, the I – V characteristics in the applied voltage dominantly followed the space-charge-limited-current behaviors. The intermediate resistance state was attributed to the thermionic emission mechanism. In the ON state, the curve in the applied voltage range was related to an Ohmic mechanism. The sandwich structure, ITO/GO/Al resistive switching device, was fabricated. The as-fabricated devices exhibit nonvolatile ternary WORM features memory with retention performance of 3 × 1 0 5 s. The ternary WORM memory of ITO/GO/Al devices open up the door to the possibility of ultrahigh density data storage of high performance nonvolatile memory devices at low cost. [ABSTRACT FROM AUTHOR]

We demonstrate a nonvolatile memristor based on Co–Al-layered double hydroxide (Co–Al LDH). We also introduce a memristor that has a hexazinone-adsorbing Co–Al LDH composite active layer. Memristor characteristics could be modulated by adsorbing hexazinone with Co–Al LDHs in the active layer. While different, Co–Al LDH-based memory devices show gradual current changes, and the memory device with small molecules of adsorbed hexazinone undergo abrupt changes. Both devices demonstrate programmable memory peculiarities. In particular, both memristors show rewritable resistive switching with electrical bistability (>105 s). This research manifests the promising potential of 2D nanocomposite materials for adsorbing electroactive small molecules and rectifying resistive switching properties for memristors, paving a way for design of promising 2D nanocomposite memristors for advanced device applications. [ABSTRACT FROM AUTHOR]