1. Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid process.
- Author
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Chang, Kuan-Chang, Tsai, Tsung-Ming, Zhang, Rui, Chang, Ting-Chang, Chen, Kai-Huang, Chen, Jung-Hui, Young, Tai-Fa, Lou, J. C., Chu, Tian-Jian, Shih, Chih-Cheng, Pan, Jhih-Hong, Su, Yu-Ting, Syu, Yong-En, Tung, Cheng-Wei, Chen, Min-Chen, Wu, Jia-Jie, Hu, Ying, and Sze, Simon M.
- Subjects
RANDOM access memory ,TEMPERATURE measurements ,COMPUTER storage devices ,LOW temperatures ,PHYSICAL measurements - Abstract
In this study, the electrical conduction mechanism of Zn:SiOx resistance random access memory (RRAM) treated with supercritical CO2 fluid (SCCO2) process was investigated by low temperature measurement. The current of low resistance state for current-voltage curves in SCCO2-treated and untreated Zn:SiOx RRAM were measured and compared under a low temperature range from 100 K to 298 K. The electrical conduction mechanisms of hopping conduction and metal-like behaviors in SCCO2-treated and untreated Zn:SiOx RRAM were discussed, respectively. Finally, the electrical conduction mechanism was analyzed and verified by the chemical composition and bonding intensity of XPS analyses. [ABSTRACT FROM AUTHOR]
- Published
- 2013
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