1. TiOx-based self-rectifying memory device for crossbar WORM memory array applications.
- Author
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Fu, Li-Ping, Song, Xiao-Qiang, Gao, Xiao-Ping, Wu, Ze-Wei, Chen, Si-Kai, and Li, Ying-Tao
- Subjects
COMPUTER storage devices ,OHMIC contacts ,WORMS ,MEMORY ,RANDOM access memory - Abstract
Resistive switching with a self-rectifying feature is one of the most effective solutions to overcome the crosstalk issue in a crossbar array. In this paper, a memory device based on Pt/TiO
x /W structure with self-rectifying property is demonstrated for write-once-read-many-times (WORM) memory application. After programming, the devices exhibit excellent uniformity and keep in the low resistance state (LRS) permanently with a rectification ratio as high as 104 at ± 1 V. The self-rectifying resistive switching behavior can be attributed to the Ohmic contact at TiOx /W interface and the Schottky contact at Pt/TiOx interface. The results in this paper demonstrate the potential application of TiOx -based WORM memory device in crossbar arrays. [ABSTRACT FROM AUTHOR]- Published
- 2021
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