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In this study, the electrical conduction mechanism of Zn:SiOx resistance random access memory (RRAM) treated with supercritical CO2 fluid (SCCO2) process was investigated by low temperature measurement. The current of low resistance state for current-voltage curves in SCCO2-treated and untreated Zn:SiOx RRAM were measured and compared under a low temperature range from 100 K to 298 K. The electrical conduction mechanisms of hopping conduction and metal-like behaviors in SCCO2-treated and untreated Zn:SiOx RRAM were discussed, respectively. Finally, the electrical conduction mechanism was analyzed and verified by the chemical composition and bonding intensity of XPS analyses. [ABSTRACT FROM AUTHOR]

This letter investigated the electrical characteristics of resistance random access memory (RRAM) with HfO2/BN bilayer structures. By adopting the high/low permittivity structure, we obtained the excellent device characteristics such as uniform distribution of switching voltage and more stable resistance switching properties of RRAM. The current conduction mechanism of low resistance state in the HfO2/BN device was transferred to space-charge-limited current conduction from Ohmic conduction owing to space electric effect concentrated by the high/low permittivity bilayer structures. The electric field in the bilayer can be verified by comsol simulation software. [ABSTRACT FROM AUTHOR]