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A multifunctional resistive switching memory devices with the typical sandwich structure of Al/Poly(4-vinylphenol) (PVP)+2-Amino-5-methyl-1,3,4-thiadiazole/Al is fabricated. Al as the bottom and top electrodes is easy to realize by simple thermal evaporation process, and a PVP and 2-Amino-5-methyl-1,3,4-thiadiazole composite film as the active layer is prepared by sol-gel method and spin coating process. The as-fabricated resistive switching memory device shows write-once-read-many (WORM) and rewritable multifunctional memory behaviors, for the rewritable and WORM memory modes, the ON/OFF ratio is 104 and 80, respectively. The as-fabricated device shows tristable conductivity states which equivalent to "0", "1" and "2", and these three conductance states are steady under the constant voltage retention test, as well as during the endurance test, indicating advantageous features of stable operation and dependable endurance. It is noteworthy that the simple preparation process is expected to promisingly hold the post of industrialization low-cost preparation in future electronic devices for ternary data storage utilities. • A multifunctional resistive switching memory devices was fabricated. • The as-fabricated device shows tristable conductivity states. • It is expected to promisingly hold the post of ternary data storage utilities. [ABSTRACT FROM AUTHOR]

Abstract The influence of blending ratio on resistive switching effect in donor-acceptor type composite of [6,6]-phenyl-C 61 -butyric acid methyl ester (PCBM) and poly(N -vinylcarbazole) (PVK)-based memory devices are investigated. Current-voltage (I - V) curves for the ITO/PCBM + PVK/Al devices with 9 wt.% of PCBM showed a current bistability with a maximum OFF/ON resistance ratio of 9 × 104, which was 100 times larger than that of the device with 23 wt.% of PCBM and was 2000 times larger than that of the device with 41 wt.% of PCBM. Furthermore, the threshold voltage obviously decreased as the PCBM concentration increases. The retention time was above 105 s indicative of the memory stability of the as-fabricated devices. The I - V characteristics at OFF state dominantly comply with the rules of space-charge-limited-current behaviors, and I - V curve at ON state obey Ohmic laws. The proposed device suggests a promising approach for adjustale OFF/ON resistance ratio and threshold voltage in electronic memory devices. Graphical abstract Image Highlights • The influence of blending ratio on resistive switching effect are investigated. • The threshold voltage obviously decreased as the PCBM concentration increases. • The resistance ratio obviously increased with the PCBM concentration decreases. [ABSTRACT FROM AUTHOR]

We report the application of graphene oxide (GO) as the active layer of memory devices. The indium-tin-oxide/GO/Al devices present the ternary write-once-read-many times resistive switching memory, and retain the data information for 3 × 1 0 5 s. In the OFF states, the I – V characteristics in the applied voltage dominantly followed the space-charge-limited-current behaviors. The intermediate resistance state was attributed to the thermionic emission mechanism. In the ON state, the curve in the applied voltage range was related to an Ohmic mechanism. The sandwich structure, ITO/GO/Al resistive switching device, was fabricated. The as-fabricated devices exhibit nonvolatile ternary WORM features memory with retention performance of 3 × 1 0 5 s. The ternary WORM memory of ITO/GO/Al devices open up the door to the possibility of ultrahigh density data storage of high performance nonvolatile memory devices at low cost. [ABSTRACT FROM AUTHOR]

• A layered materials memristor was introduced. • Memristors characteristic was modulated by hexazinone. • Gradual current changes were took on. • The memory device demonstrate programmable peculiarities. The nonvolatile resistive switching memory devices and the effect of adsorbed small molecule hexazinone have been investigated. Resistive switching behaviour of Co-Al layered double hydroxides (Co-Al LDHs)-based is gradually varied. At the same time, when Co-Al LDHs adsorbed the small molecule hexazinone, its resistive switching behaviour changed suddenly. Both memristors exhibit non-volatile data storage and good data retention characteristics. The influence of small molecule hexazinone on microcarrier transport was analyzed. This research manifests the promising potential of nanocomposite materials adsorbed electroactive small molecules in rectifying the resistive switching properties and provides some ideas for designing advanced devices of nanocomposite memristors. [ABSTRACT FROM AUTHOR]

A memory device based on MoS 2 -polyvinyl alcohol was fabricated. As a good dispersant, polyvinyl alcohol solution can disperse 2D layered materials more evenly in the solution. The 19 states of the device conductance are modulated step by step by direct current scanning, which makes it possible to perform the computing task in memory. Then, the presence of conductive filaments allows the resistance state of the memristor to be dynamically transformed, which is similar to some basic behavior of biological synapses. Further, a variety of conductivity states such as short-term potentiation, short term depression, long term potentiation and long-term depression behavior are modulated by applying voltage to simulate the basic behavior of biological synapses. Finally, the paired pulse facilitation, paired pulse depression, spiking timing dependent plasticity and spiking voltage dependent plasticity behaviors of biological synapses are simulated in memristor devices. [Display omitted] • A memory device based on MoS 2 and polyvinyl alcohol composite was fabricated. • The multi-states of the device conductance are modulated step by step. • The presence of conductive filaments allows the resistance state of the memristor to be dynamically transformed. • The basic behavior of biological synapses was simulated in memristor devices. [ABSTRACT FROM AUTHOR]

We demonstrate a nonvolatile memristor based on Co–Al-layered double hydroxide (Co–Al LDH). We also introduce a memristor that has a hexazinone-adsorbing Co–Al LDH composite active layer. Memristor characteristics could be modulated by adsorbing hexazinone with Co–Al LDHs in the active layer. While different, Co–Al LDH-based memory devices show gradual current changes, and the memory device with small molecules of adsorbed hexazinone undergo abrupt changes. Both devices demonstrate programmable memory peculiarities. In particular, both memristors show rewritable resistive switching with electrical bistability (>105 s). This research manifests the promising potential of 2D nanocomposite materials for adsorbing electroactive small molecules and rectifying resistive switching properties for memristors, paving a way for design of promising 2D nanocomposite memristors for advanced device applications. [ABSTRACT FROM AUTHOR]

• The Al/PCBM + PVP/Al memory devices are prepared by spin-coating process. • The memory device exhibits a typical nonvolatile write-once-read-many-times storage effect. • The multistage resistive switching processes in memory device were reported. • The broken processes of carbon-rich conducting filament have been clarified. • The conductance quantization during resistive switching processes was analyzed. Memory devices were prepared by spin-coating process, and the multistage resistive switching behavior has been found in organic coating films-based of memory device. The composite of 6 , 6 -phenyl C 61 -butyric acid methyl ester and polyvinyl pyrrolidone were used as active layer materials. The as-prepared device exhibits a typical nonvolatile write-once-read-many- times storage effect, and shows multistate resistive switching behavior, and there are obvious distinctions between different resistance states. The resistance in low resistance state (LRS) and high resistance state (HRS) dependence on temperature is tested, and the resistance of LRS and HRS show metal and semiconductor characteristics, respectively. As well as, the resistance in HRS shows evident dependence on cell size. Hence, the resistive switching mechanism was attributed to the broken processes of carbon-rich conducting filament. Furthermore, conductance quantization during resistive switching processes was analyzed. This work might make it attractive for exploiting high density data storage. [ABSTRACT FROM AUTHOR]