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The description of a novel circuit which utilizes a field-effect transistor (FET) current source and a high-voltage diode to realize a simple inexpensive single-shot high-voltage switch is presented. The switch was specifically designed for use with fast low-impedance pulse-power discharge circuits such as those commonly used for plasma physics and high-pressure research. This switch can also be utilized in any application where speed, low cost, and small size are important concerns. The design readily lends itself to implementation as a discrete component or hybrid circuit. The circuit has been simulated and the design parameters of the configuration have been numerically investigated utilizing PSPICE. These simulations and experimental data are presented. Index Terms - High voltage, switch.

As electroexplosive devices (EED's) are increasingly exposed to the general public, their possible accidental initiation due to their susceptibility to electromagnetic interference (EMI) becomes a greater concern. Commonly, unintended signals coupled to the EED have been attenuated by the insertion of an L-C filter in the leads of the EED. However, these have typically been bulky, heavy, and expensive, and can often not be installed close to the EED itself, thereby reducing the effectiveness of the filter. This paper discusses a filter and an EED which are mounted on the same substrate using hybrid microelectronics technology and surface-mount components. The resulting structure is small, lightweight, inexpensive and mechanically robust. Also, this application further demonstrates a new EMI insensitive EED, the semiconductor junction igniter (SJI). An electrical model was developed for the filter and EED and was verified with impedance measurements. Voltage attenuation and power dissipation were calculated, and temperature of the devices under excitation was measured, to demonstrate the effectiveness of the filter.

The design and characterization of a novel passive ignition system which consists of a simple two-stage radio frequency (RF) low pass filter and a novel RF insensitive electro-explosive device is discussed. Lumped parameter modeling was used to provide the frequency response of the circuit. The 2.75 Folding Fin Aircraft Rocket (2.75 FFAR) was utilized as a test vehicle for field measurements which were performed as specified in MIL-STD 1385B at the Naval Surface Warfare Center in Dhalgren, VA. The configuration exhibited excellent performance over the entire frequency range of 1.5 MHz to 1 GHz.

A monolithic solid-state electro-explosive initiator which consists of Schottky barriers or p-n junctions fabricated on opposite sides of a silicon wafer is discussed. Thermal characterization of the structure was performed during radio frequency (RF) excitation to demonstrate RF insensitivity.

The description and characterization of a novel, monolithic, solid-state electro-explosive device is presented. The structure is inherently immune to radio frequency (RF) radiation and also offers protection from electrostatic discharge (ESD). Interconnection to the device can be accomplished by a variety of techniques such as soldering, epoxy, etc. Standard microelectronic techniques were utilized for fabrication. The devices can be manufactured very economically and in large quantities.