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A physics-based dynamic electro-thermal model is developed for the IGBT by coupling a temperature-dependent IGBT electrical model with dynamic thermal models for the IGBT silicon chip, packages, and heatsinks. The temperature-dependent IGBT electrical model describes the instantaneous electrical behavior in terms of the instantaneous temperature of the IGBT silicon chip surface. The instantaneous power dissipated in the IGBT is calculated using the electrical model and determines the instantaneous rate that heat is applied to the surface of the silicon chip thermal model. The thermal models determine the evolution of the temperature distribution within the thermal network and thus determine the instantaneous value of the silicon chip surface temperature used by the electrical model. The IGBT electro-thermal model is implemented in the Saber circuit simulator and is connected to external circuits in the same way as the previously presented Saber IGBT model, except that it has an additional thermal terminal that is connected to the thermal network component models for the silicon chip, package, and heatsink. The IGBT dynamic electro-thermal model and the thermal network component models are verified for the range of temperature and power dissipation levels (heating rates) that are important for power electronic systems.

A physics-based model for the Insulated Gate Bipolar Transistor (IGBT) is implemented into the widely available circuit simulation package IG-SPICE. Based on analytical equations describing the semiconductor-physics, the model accurately describes the nonlinear junction capacitances, moving boundaries, recombination, and carrier scattering, and effectively predicts the device conductivity modulation. In this paper, the procedure used to incorporate the model into IG-SPICE and various methods necessary to ensure convergence are described. The effectiveness of the SPICE-based IGBT model is demonstrated by investigating the static and dynamic current sharing of paralleled IGBTs with different device model parameters. The simulation results are verified by comparison with experimental results.

For the study of electromagnetic interference (EMI) mechanisms in pulsewidth-modulated inverters, this paper presents an analysis approach based on empirical models of the inverter components and their associated various parasitics. The power switching devices were modeled with a physics-based device modeling technique. Using time-domain reflectometry, we characterized the major parasitics in the device modules, passive components, cables, leads, and interconnects. Simulations of a full-bridge insulated gate bipolar transistor inverter were then carried out in the time domain under hard-switching and zero-voltage switching conditions. The simulated EMI spectra were compared with the experimental counterparts with the separation of common-mode and differential-mode EMI. The comparisons verified the validity of the proposed modeling approach over most of the EMI frequency range. Also discussed in the paper are the soft-switching effects on the inverter's EMI. Index Terms--Device modeling, electromagnetic interference, parasitic components, pulsewidth-modulated inverter, soft switching, time-domain reflectometry.

Techniques are described for validating the performance of insulated gate bipolar transistor (IGBT) circuit simulator models for soft-switching circuit conditions. The circuits used for the validation include a soft-switched boost converter similar to that used in power-factor correction, and a new half-bridge testbed that is specially designed to examine the details of IGBT soft-switching waveforms. The new testbed is designed to emulate the soft-switching circuit conditions of actual applications circuits, while allowing the easy change of IGBT operating conditions. The testbed also eliminates the problems of commutating diode noise and IGBT temperature rise found in actual application circuits. Simulations of IGBT models provided in circuit simulator component libraries are compared with measurements obtained using these test circuits for the soft-switching conditions of zero-voltage turn-on, zero-voltage turn-off, or zero-current turn-off. Finally, the results are summarized by comparing the switching energies for the various measurements and simulations presented in this work. Index Terms--Circuit simulation, insulated gate bipolar transistor, model validation, power electronics, soft switching, switching energy.

The internal failure dynamics of the insulated gate bipolar transistor (IGBT) for unclamped inductive switching (UIS) conditions are studied using simulations and measurements. The UIS measurements are made using a unique, automated nondestructive reverse-bias safe operation area test system. Simulations are performed with an advanced IGBT circuit simulator model for UIS conditions to predict the mechanisms and conditions for failure. It is shown that the conditions for UIS failure and the shape of the anode voltage avalanche-sustaining waveforms during turn-off vary with the IGBT temperature, and turn-off current level. Evidence of single- and multiple-filament formation is presented and supported with both measurements and simulations. Index Terms--Avalanche, current constriction, failure, filament, insulated gate bipolar transistor, modeling, nondestructive testing, reverse-bias safe operation area.