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5 results on '"Dogmus, Ezgi"'

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1. Key features for high efficiency and highly robust mmW GaN HEMTs: [Invited]

2. GaN-on-Silicon transistors with extremely low off-state leakage current above 3 kilovolts: [Invited]

3. High power, high PAE Q-band sub-10 nm barrier thickness AlN/GaN HEMTs

4. Substrate grounded GaN-on-Si HEMTs with record vertical breakdown above 2 kV

5. Impact of gate-drain spacing engineering on DC and noise performance of SiN in-situ passivated InAlGaN/GaN HEMTs

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