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Recent studies (J. Alloys Compd. 695 (2017) 2661) of the electronic structure and properties of $(TiZrNbCu)_{1-x}$$Ni_{x}$ (x$\leq$0.25) amorphous high entropy alloys (a-HEA) have been extended to x=0.5 in order to compare behaviours of a-HEA and conventional Ni-base metallic glasses (MG). The amorphous state of all samples was verified by thermal analysis and X-ray diffraction (XRD). XRD indicated a probable change in local atomic arrangements, i.e. short-range-order (SRO) for x$\geq$0.35. Simultaneously, thermal parameters, such as the first crystallization temperature $T_{x}$ and the liquidus temperature showed a tendency to saturate for x$\geq$0.35 . The same tendency also appeared in the magnetic susceptibility $\chi_{exp}$ and the linear term in the low temperature specific heat {\gamma}. The Debye temperatures and Youngs moduli also tend to saturate for x$\geq$0.35. These unusual changes in SRO and all properties within the amorphous phase seem correlated with the change of valence electron number (VEC) on increasing x., Comment: 13 pages, 6 figures

We report on broadband dielectric spectroscopy on the one-dimensional semiconductor (NbSe4)3I. Below the structural phase transition close to 270 K, which is accompanied by complex charge-order processes, we observe colossal dielectric constants with a frequency and temperature dependence very similar to what is observed in charge-density wave systems.

The low frequency dielectric response of charge density wave systems K0.3MoO3 and o-TaS3 shows a hysteresis on temperature cycling. In both systems the closing of the hysteresis at low temperature coincides with the closing of the hysteresis in the DC conductivity and corresponds to the temperature of the glass transition observed in the dielectric response of these two systems. The AC conductivity is higher on heating, while the DC conductivity is lower, i.e. two loops have opposite directions. The higher AC conductivity (or dielectric response) is a consequence of a more corrugated CDW phase on heating.

In our Reply to the Comment [1] we refute the "straightforward" interpretation of the excess low-temperature specific heat, C., contribution we have measured in our study of CDW systems K0.3MoO3 and (TaSe4)(2)I [2] as originating solely from normal phonon modes. The specific sensitivity of the bump in Cp/T-3 at low temperatures to the impurity content is consistent with the increased value of the phason pinning gap while the dispersion of normal phonons remains unaffected. We ascribe at least this part of the anomaly to the phason contribution. As stated in reference [3] that the phonon density of states extracted from neutron scattering measurements is the least reliable in this energy range (

Broad luminescent bands are observed in low temperature Raman spectra of solid acetylacetone. Number of observed luminescent bands depends upon the choice of excitation laser line - e.g. additional bands appear when 488.8 nm instead of 514.5 nm laser line is used. In liquid acetylacetone at room temperature there are no observed electronic transitions in the visible part of the spectrum, therefore it is proposed that luminescent bands have their origin in photoluminescent transitions between excited states and the ground electronic state of the crystal.