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The topological insulator BiSb is promising for spin-orbit torque applications thanks to its high electrical conductivity and giant spin Hall effect. Previous works have reported a large spin Hall angle for BiSb deposited on top of a ferromagnetic layer (FM) with perpendicular magnetic anisotropy. However, since BiSb has large surface roughness, obtaining a large spin Hall angle in BiSb (bottom)/FM is more challenging than in FM/BiSb(top) structures, especially when the FM layer is very thin. Here, we investigate the role of an interfacial layer on the effective spin Hall angle in BiSb (bottom)/FM with in-plane magnetization deposited by magnetron sputtering on sapphire substrates. We showed that inserting an interfacial layer with optimized thickness helps improve the effective spin Hall angle. We achieved a relatively high effective spin Hall angle of 1.7 in BiSb (bottom)/Ru 1 nm/ Co 1 nm/ Pt 1 nm structure.

We have examined a dynamical spin injection in a CoFeB/Pt/CoFeB trilayered structure. Although the contribution of the spin pumping was eliminated by the symmetric spin injection from the upper and lower CoFeB layers, a clear voltage change due to the inverse spin Hall effect has been observed. We find that the observed signal can be quantitatively explained by considering the thermal spin injection due to the heating effect during ferromagnetic resonance (FMR). This innovative demonstration indicates the significant contribution of the FMR heating in the dynamical spin injection.

The physics of the anomalous and spin Hall effects is one of the most intriguing aspects of condensed matter physics. An important finding from a large collection of experimental and theoretical results is the universal scaling of the anomalous or spin Hall conductivity with the electric conductivity. This scaling has been successfully described by the intrinsic Berry curvature and extrinsic scattering mechanisms for metallic systems, revealing the topological nature of these effects. In contrast, the underlying physics in the opposite limit, the disordered insulating regime, is still unclear. In particular, it remains a major challenge, both experimentally and theoretically, to explore the spin Hall effect in the insulating regime. Here, we report the observation of the crossover between the metallic and insulating regimes of the spin Hall effect. The result demonstrates a direct correspondence between the spin and anomalous Hall effects, which will advance the fundamental understanding of spin transport.

Spin-orbit torques (SOTs) have been investigated most widely in normal metal/ferromagnet bilayers where the spin Hall effect of normal metal is a main source of spin currents. Recently, ferromagnets are found to also serve as spin-current sources through spin-orbit coupling. In this work, we theoretically investigate SOT acting on ferromagnet2 in ferromagnet1/normal metal/ferromagnet2 trilayers, which is caused by the spin Hall and spin swapping effects of ferromagnet1. Our result provides an analytical expression of SOT in the trilayers, which may be useful for quantifying the spin Hall and spin swapping effects of ferromagnets and also for designing and interpreting SOT experiments where a ferromagnet is used as a spin-current source instead of a normal metal.

We investigated Pt/Ir/Pt and Pt/Ir multilayers as candidates of nonmagnetic spacer layers in synthetic antiferromagnetic (AF) layers, which are available for the systematic study on AF spintronics. In these systems, we observed (i) AF interlayer exchange coupling in Pt/Ir/Pt and Pt/Ir nonmagnetic spacer layers sandwiched by Co layers and (ii) large spin Hall conductivity in Pt/Ir multilayer heavy-metal systems which is essential to achieve low power consumption spin-orbit torque switching. We found that total nonmagnetic spacer layer thickness $[{t}_{\mathrm{total}}={t}_{\mathrm{Pt}}(\mathrm{Pt}\phantom{\rule{0.16em}{0ex}}\mathrm{thickness})+{t}_{\mathrm{Ir}}(\mathrm{Ir}\phantom{\rule{0.16em}{0ex}}\mathrm{thickness})]$ range in which AF interlayer exchange coupling is observed is wide in Co/nonmagnetic spacer layer/Co with Pt/Ir/Pt and Pt/Ir nonmagnetic spacer layers. Moreover, the large spin Hall angle of ${\ensuremath{\theta}}_{\mathrm{SH}}=10.3%$ and low resistivity of ${\ensuremath{\rho}}_{xx}=35\phantom{\rule{0.16em}{0ex}}\ensuremath{\mu}\mathrm{\ensuremath{\Omega}}\phantom{\rule{0.16em}{0ex}}\mathrm{cm}$ in Pt/Ir multilayer heavy metal are observed. These results indicate that Pt/Ir/Pt and Pt/Ir are nonmagnetic spacer layers allowing us to achieve the AF interlayer exchange coupling and generation of large spin-orbit torque via spin Hall effect in synthetic AF coupling layer system.

Spin accumulation is generated by passing a charge current through a ferromagnetic layer and sensed by other ferromagnetic layers downstream. Pure spin currents can also be generated in which spin currents flow and are detected as a nonlocal resistance in which the charge current is diverted away from the voltage measurement point. Here, we report nonlocal spin-transport on two-dimensional surface-conducting SrTiO3 (STO) without a ferromagnetic spin-injector via the spin Hall effect (and inverse spin Hall effect). By applying magnetic fields to the Hall bars at different angles to the nonlocal spin-diffusion, we demonstrate an anisotropic spin-signal that is consistent with a Hanle precession of a pure spin current. We extract key transport parameters for surface-conducting STO, including: a spin Hall angle of γ ≈ (0.25 ± 0.05), a spin lifetime of τ ∼ 49 ps, and a spin diffusion length of λs ≈ (1.23 ± 0.7) μm at 2 K.

Research on spin current transport has so far been concentrated around metals, ferromagnetic insulators and inorganic semiconductors, but is still relatively scarce in organic semiconductors. Recently, there have been a few attempts at exploring spin pumping into polymers, which showed promising results. The main part of this thesis provides a detailed experimental analysis of spin pumping into an organic semiconductor PBTTT in vertical and lateral device architectures exploiting inverse spin-Hall effect as the detection method. We have discovered fundamental mistakes in previous publications on this topic and offered a way to rectify them with extended angular dependence measurements. In this way, we could distinguish spin pumping signal from other spurious effects. Our results from lateral spin pumping experiments expose drawbacks in the current device architecture and show no convincing proof of achieving spin current transport through PBTTT. Experiments with vertical spin pumping aimed at exploring the most optimal fabrication parameters that maximise the spin pumping signal and minimise spurious effects. We attempted spin pumping through trilayers using gold or undoped PBTTT as the transport layer and revealed further difficulties associated with the vertical architecture. The second part of this thesis proposes a new way to detect spin currents in organic semiconductors based on dynamic nuclear polarisation and organic magnetoresistance. It uses the spin-Hall effect as the source of spin currents and is therefore free from the numerous spurious effects that accompany the spin pumping method. We have conducted initial measurements with this new experimental method and identified ways to improve its design.

Current-induced magnetization switching by spin-orbit torque generated in heavy metals offers an enticing realm for energy-efficient memory and logic devices. The spin Hall efficiency is a key parameter in describing the generation of spin current. Recent findings have reported enhancement of spin Hall efficiency by mechanical strain, but its origin remains elusive. Here, we demonstrate a 45% increase in spin Hall efficiency in the platinum/cobalt (Pt/Co) bilayer, of which 78% of the enhancement was preserved even after the strain was removed. Spin transparency and X-ray magnetic circular dichroism revealed that the enhancement was attributed to a bulk effect in the Pt layer. This was further confirmed by the linear relationship between the spin Hall efficiency and resistivity, which indicates an increase in skew-scattering. These findings shed light on the origin of enhancement and are promising in shaping future utilization of mechanical strain for energy-efficient devices. Agency for Science, Technology and Research (A*STAR) Economic Development Board (EDB) National Research Foundation (NRF) Submitted/Accepted version This work is supported by an Industry-IHL Partnership Program (NRF2015-IIP001-001) and an EDB-IPP (RCA − 17/284) grant. This work is also supported by the RIE2020 ASTAR AME IAF-ICP grant (No. I1801E0030). W.Z. and P.K.J.W. acknowledge financial support by the Fundamental Research Funds for the Central Universities.

Via exploring the spin dynamics and transport properties at interfaces of magnetic material/non-magnetic metal bilayers, spintronics advanced many techniques on generation, detection, and manipulation of spin currents, which laid down a foundation for designing spintronic devices. New ideas and methods for manipulating spin are required in the spintronics community. Merging with cavity quantum electrodynamics, magnetic resonance in ferromagnets inside of a microwave cavity, realizes a strong magnon-microwave coupling at room temperature, opening an avenue to manipulate spin and spin current for the spintronics community. Spin-microwave coupling strength was significantly improved by replacing a few spins in a paramagnetic spin system with magnetization in ferromagnetic materials. Thus, a strongly coupled magnon-microwave system offers a hybrid quantum platform with many measures to tune the coupled system, such as an exchange magnetic field, an anisotropy field, controlled coupling strength, controlled damping parameters, and so on. Many devices were proposed and demonstrated with potential applications. In this review, we briefly introduce the concept and mechanism of magnon-microwave coupling, a classical electrodynamical coupling model for the coupling, spin currents produced by the coupled magnon, and manipulation of the spin current via the strong coupling. In ferromagnets, magnons can couple to a microwave mode as a magnon-polariton propagating in the materials. The strongly coupled magnon-microwave system is a magnon-polariton in a cavity where the microwave was confined as a resonance mode with a high quality factor. Using the Landau-Lifshitz-Gilbert equation and Maxwell equations, we introduce the classical electrodynamical coupling model and reveal that the magnon is driven by a torque produced by the microwave magnetic field on the magnetization and the microwave is feedback via Faraday’s law. Therefore, the coupling strength of the magnon-microwave system can be controlled by changing the torque. Magnon-microwave coupling is experimentally studied using many techniques, such as microwave transmission, Brillouin light scattering, Faraday rotation measurement, and spin pumping electrical detection. Spin pumping is well explored in the spintronics community as a spin current produced by magnon and detected as a voltage via inverse spin Hall effect in a novel metal. Combining with microwave transmission of the coupled microwave subsystem, spin pumping electrical detection by directly detecting the spin current produced by the magnon subsystem in the coupled system, illustrates a more complete profile of the coupled magnon-microwave system. In addition, the strongly coupled magnon-microwave system offers a new technique to manipulate spin currents. We experimentally demonstrate that spin currents produced by the strongly coupled system are correlated with each other mediated by the microwave cavity, and can be manipulated remotely. Two almost identical magnet samples are used to couple to a cavity and the coupling strengths between each magnet and the cavity are tunable individually. By using electrical detection to locally detect each magnet sample respectively, we find that the spin currents produced by two magnet samples are coherently correlated. By tuning the coupling strength of one magnet sample to the cavity, the spin current produced by the second magnet sample is manipulated distantly over a few centimeters, which is far longer than the distance of spin-orbit interaction or exchange interaction. This distant control is only limited by the coherence length of the microwave and the dimension of the cavity. This flexibility opens the door to improve spin current generation and manipulation for cavity spintronic devices.

The detection of spin current injected from the ferromagnet source to the semiconductor channel is very challenging due to the low injection efficiency at the interface. Especially, it is difficult to detect the spin precession signal in a strong Rashba system without a signal decay. In a semiconductor system, the spin Hall angle is much larger than the spin injection efficiency, so the spin Hall effect is utilized for room temperature operation of the semiconductor-based Rashba devices. To realize spin transport device induce by the spin-charge and charge-spin conversions, the direct spin Hall effect (DSHE) and the inverse spin Hall effect (ISHE) are adopted, respectively. The spin current is clearly detected up to room temperature and the spin transport signal agrees to the temperature dependence of the Rashba effect. From these spin transport signals, we suggest another option to extract Rashba parameters from cryogenic temperature to room temperature. The both signals of DSHE and ISHE also confirm the Onsager Reciprocity in a Rashba system.

As the need for ever greater transistor density increases, the commensurate decrease in device size approaches the atomic limit, leading to increased energy loss and leakage currents, reducing energy efficiencies. Alternative state variables, such as electronic spin rather than electronic charge, have the potential to enable more energy-efficient and higher performance devices. These spintronic devices require materials capable of efficiently harnessing the electron spin. Here we show robust spin transport in Cd3As2 films up to room temperature. We demonstrate a nonlocal spin valve switch from this material, as well as inverse spin Hall effect measurements yielding spin Hall angles as high as θSH = 1.5 and spin diffusion lengths of 10-40 μm. Long spin-coherence lengths with efficient charge-to-spin conversion rates and coherent spin transport up to room temperature, as we show here in Cd3As2, are enabling steps toward realizing actual spintronic devices.

Anomalous spin-Hall effects (SHE) and anomalous inverse spin-Hall effects (ISHE) are predicted when the order parameters are involved in the charge-spin interconversion. A spin current whose propagation and polarization are collinear and transverse to an applied charge current can be generated when the charge current is parallel to the magnetization $\vec M$ in a ferromagnet or to the Neel order $\vec n$ in an anti-ferromagnet. When the applied charge current is perpendicular to the order parameter, two spin currents can be generated. One is the spin current polarized along the order parameter and propagating along the charge current direction. The other is the one polarized in the charge current direction and propagating along the order parameter direction. Charge currents proportional to the order parameter are generated by applied spin currents in the anomalous ISHE. When a spin current whose propagation and polarization are collinear is applied, the charge current is along the perpendicular (to the spin current) component of order parameter, and no current for order parameter along the spin current. For applied spin current with propagation and polarization mutually orthogonal to each other, a charge current along the spin current propagation direction is generated if the order parameter is collinear with the polarization of the spin current. A charge current along the polarization of spin current is generated if the order parameter is collinear with the propagation direction of the spin current. Experimental verifications are also proposed. In terms of applications, one of the great advantages of anomalous SHE is that one can control the generated spin or charge current by controlling the magnetization or the Neel order in the magnetic materials.

We investigated spin-Hall effect (SHE) and degree of MgO (100) orientation in artificially synthesized (W/Hf)-multilayer/CoFeB/MgO systems with various W thicknesses. We found that the artificially synthesized multilayer systems can enhance the spin-Hall effect and control the value of spin diffusion length. We observed a maximum magnitude in both spin-Hall angle and spin-Hall conductivity as a function of W thickness in W/Hf-multilayer systems, and found that the values of spin-Hall conductivity are larger than that for β-phase W. In addition, a more highly oriented MgO (100) texture on CoFeB is obtained for (W/Hf)-multilayer systems prepared under low-Ar-pressure condition, which would be suitable for preparation of magnetic tunnel junctions with high tunnel magnetoresistance properties on (W/Hf)-multilayer heavy metal electrode. These results suggest that the artificially synthesized multilayer system is one of the avenues for realizing spin devices using spin-orbit torque.

The magnetization manipulation by the current-induced spin–orbit torque opens a prospect for energy-efficient spintronic applications. Here, we investigate controllable spin–orbit torques (SOTs) re...

An emerging field of spintronics, spin-orbitronics, aims to discover novel phenomena and functionalities originating from spin-orbit coupling in solid-state devices. The development of spin-orbitronics promises a fundamental understanding of spin physics in condensed matter, as well as smaller, faster, and far-more energy-efficient spin-based devices. Of particular importance in this field is current-induced spin-orbit torques, which trigger magnetic dynamics by the transfer of angular momentum from an atomic lattice to local magnetization through the spin-orbit coupling. The spin-orbit torque has attracted extensive attention for its fascinating relativistic and quantum mechanical nature, as well as prospective nanoelectronic applications. In this article, we review our studies on the generation and manipulation of current-induced spin-orbit torques.

Manganites have shown potential in spintronics because they exhibit high spin polarization. Here, by ferromagnetic resonance we have studied the damping properties of La0.67Sr0.33MnO3/Pt bilayers which are prepared by oxide molecular beam epitaxy. The damping coefficient (α) of a La0.67Sr0.33MnO3 (LSMO) single layer is found to be 0.0104. However the LSMO/Pt bilayers exhibit a decrease in α with an increase in Pt thickness. This decrease in the value of α is probably due to high anti-damping like torque. Furthermore, we have investigated the angle dependent inverse spin Hall effect (ISHE) to quantify the spin pumping voltage from other spin rectification effects such as the anomalous Hall effect and anisotropic magnetoresistance. We have observed a high spin pumping voltage (∼20 μV). The results indicate that both anti-damping and spin pumping phenomena occur simultaneously.

Heavy metal–ferromagnet bilayer structures have attracted great research interest for charge-to-spin interconversion. In this work, we investigated the effect of the permalloy (Py) seed layer on the tantalum (Ta) polycrystalline phase and its spin Hall angle. Interestingly, for the same deposition rates the crystalline phase of Ta deposited on the Py seed layer strongly depends on the thickness of the seed layer. We observed a phase transition from α-Ta to (α + β)-Ta while increasing the Py seed layer thickness. The observed phase transition is attributed to the strain at the interface between the Py and Ta layers. Ferromagnetic resonance-based spin pumping studies reveal that the spin-mixing conductance in the (α + β)-Ta is relatively higher as compared to the α-Ta. Spin Hall angles of α-Ta and (α + β)-Ta are obtained from the inverse spin Hall effect (ISHE) measurements. The spin Hall angle of (α + β)-Ta is estimated to be θSH = −0.15 ± 0.009 which is relatively higher than that of the α-Ta. Our systematic results connecting the phase of Ta with the seed layer and its effect on the efficiency of spin to charge conversion might resolve ambiguities across various literature and open up new functionalities based on the growth process for emerging spintronic devices.

Bi2Se3 is a well-established topological insulator (TI) having spin momentum locked Dirac surface states at room temperature and predicted to exhibit high spin to charge conversion efficiency (SCCE) for spintronics applications. The SCCE in TIs is characterized by an inverse Edelstein effect length (λIREE). We report an λIREE of ∼0.36 nm, which is the highest ever observed in Bi2Se3. Here, we performed spin pumping and inverse spin Hall effect (ISHE) in an electron beam-evaporated Bi2Se3/CoFeB bilayer. The Bi2Se3 thickness dependence of λIREE, perpendicular surface anisotropy (KS), spin mixing conductance, and spin Hall angle confirmed that spin to charge conversion is due to spin momentum locked Dirac surface states. We propose that the role of surface states in SCCE can be understood by the evaluation of KS. The SCCE is found to be high when the value of KS is small.

Interconversion between charge and spin through spin-orbit coupling lies at the heart of condensed-matter physics. In normal metal/ferromagnet bilayers, a concerted action of the interconversions, the spin Hall effect and its inverse effect of normal metals, results in spin Hall magnetoresistance, whose sign is always positive regardless of the sign of spin Hall conductivity of normal metals. Here we report that the spin Hall magnetoresistance of Ta/NiFe bilayers is negative, necessitating an additional interconversion process. Our theory shows that the interconversion owing to interfacial spin-orbit coupling at normal metal/ferromagnet interfaces can give rise to negative spin Hall magnetoresistance. Given that recent studies found the conversion from charge currents to spin currents at normal metal/ferromagnet interfaces, our work provides a missing proof of its reciprocal spin-current-to-charge-current conversion at same interface. Our result suggests that interfacial spin-orbit coupling effect can dominate over bulk effects, thereby demanding interface engineering for advanced spintronics devices., In normal metal/ferromagnet bilayers, the spin Hall magnetoresistance originating from the spin Hall effect of normal metal possesses positive sign regardless of the sign of spin Hall conductivity of normal metal. Here, the authors report negative spin Hall magnetoresistance of Ta/NiFe bilayers due to interfacial spin orbit coupling at interfaces.

Domain walls are the transition regions between two magnetic domains. These objects have been very relevant during the last decade, not only due to their intrinsic interest in the development of novel spintronics devices but also because of their fundamental interest. The study of domain wall has been linked to the research on novel spin-orbit coupling phenomena such as the Dzyaloshinskii-Moriya interaction and the spin Hall effect amount others. Domain walls can be nucleated in ferromagnetic nanostrips and can be driven by conventional magnetic fields and spin currents due to the injection of electrical pulses, which make them very promising for technological applications of recording and logic devices. In this review, based on full micromagnetic simulations supported by extended one-dimensional models, we describe the static and dynamic properties of domain walls in thin ferromagnetic and ferrimagnetic wires with perpendicular magnetic anisotropy. The present chapter aims to provide a fundamental theoretical description of the fundaments of domain walls, and the numerical tools and models which allow describing the DW dynamics in previous and future experimental setups., Updated and corrected Fig 29 indicates that adjacent DWs in HM/FiM at T=TA are efficiently driven by preserving their relative distance even when passing along curved parts. This also replaces Fig. 8 in "Current-driven domain wall dynamics in ferrimagnets: Micromagnetic approach and collective coordinates model". E Martinez at al. JMMM 491 (2019)

Giant spin Hall effect (GSHE) has been observed in heavy metal materials such as Ta, Pt, and W, where spins are polarized in the surface plane and perpendicular to the charge current direction. Spins generated in these materials have successfully switched magnets with in-plane magnetic anisotropy (IMA) and perpendicular magnetic anisotropy (PMA) through spin orbit torque (SOT) mechanism. It is generally accepted that PMA magnets are preferred over IMA magnets in data storage applications owing to their large thermal stability even at ultra scaled dimensions. However, SOT switching of PMA magnets by conventional GSHE materials requires either a small external magnetic field, a local dipolar field, or introducing tilted anisotropy to break the symmetry with respect to the magnetization. To deterministically switch a PMA without any additional assistance, nonconventional GSHE materials that can generate spins with polarization perpendicular to the surfaces are needed. Several monolayer transition metal dichalcogenides (TMDs) have been predicted to generate such out of plane spins due to their 2D nature and unique band structures. Interestingly, opposite spins are locked to their respective sub-band in each K valley of the TMD valence band with substantially large energy splitting, which enables polarized spins to be accessible through electrical gating and spatially separated by electric field through the valley Hall effect (VHE). Therefore, spatial separation and accumulation of spins in these 2D TMDs are uniquely referred to as coupled valley and spin Hall effect. Here, we report an experiment of electrical generation of spin current with out of plane polarization in monolayer WSe2 and detection of spin signals through a nonlocal spin valve structure built on a lateral graphene spin diffusion channel that partially overlaps with WSe2.

The spin Hall effect (SHE) is usually observed as a bulk effect in high-symmetry crystals with substantial spin–orbit coupling (SOC), where the symmetric spin–orbit field imposes a widely encountered trade-off between spin Hall angle (θSH) and spin diffusion length (Lsf), and spin polarization, spin current and charge current are constrained to be mutually orthogonal. Here, we report a large θSH of 0.32 accompanied by a long Lsf of 2.2 μm at room temperature in a low-symmetry few-layered semimetal MoTe2, thus identifying it as an excellent candidate for simultaneous spin generation, transport and detection. In addition, we report that longitudinal spin current with out-of-plane polarization can be generated by both transverse and vertical charge current, due to the conventional and a newly observed planar SHE, respectively. Our study suggests that manipulation of crystalline symmetries and strong SOC opens access to new charge-spin interconversion configurations and spin–orbit torques for spintronic applications. A large spin Hall angle and long spin diffusion length are found in the low-symmetry, few-layer semimetal MoTe2 at room temperature, thus identifying this material as an excellent candidate for simultaneous spin generation, transport and detection.

The problem of spin current generation and transformation into electric signals in thin-film ferromagnet/nonmagnetic metal bilayer structures is investigated. This direction is of considerable scientific interest and promising for applications in spintronics. An LSMO/Pt structure consisting of an epitaxial film of ferromagnetic manganite La2/3Sr1/3O3 grown on a single-crystal NdGaO3 substrate and coated with a platinum film has been studied experimentally. The spin current was generated by the spin pumping method upon the excitation of a ferromagnetic resonance in the ferromagnetic layer and was detected by the electric voltage USP arising in the nonmagnetic metal layer due to the inverse spin Hall effect. Owing to its relatively low Curie temperature (~350 K), using LSMO allowed the influence of ferromagnetic-layer magnetization on the spin current generation to be studied in detail in the temperature range 100–350 K. In this case, the influence of the shape of the ferromagnetic resonance line, which is the convolution of homogeneous (Lorentzian) spin packets and inhomogeneous Gaussian broadening (Voigt model), was consistently taken into account. As a result of our analysis of all the parameters defining USP, we have obtained the temperature dependence of the mixed spin conductance, which has turned out to be approximately proportional to the ferromagnet magnetization squared. This result is compared with existing theoretical models.

Spin dynamics in antiferromagnets has much shorter timescales than in ferromagnets, offering attractive properties for potential applications in ultrafast devices1–3. However, spin-current generation via antiferromagnetic resonance and simultaneous electrical detection by the inverse spin Hall effect in heavy metals have not yet been explicitly demonstrated4–6. Here we report sub-terahertz spin pumping in heterostructures of a uniaxial antiferromagnetic Cr2O3 crystal and a heavy metal (Pt or Ta in its β phase). At 0.240 terahertz, the antiferromagnetic resonance in Cr2O3 occurs at about 2.7 tesla, which excites only right-handed magnons. In the spin-canting state, another resonance occurs at 10.5 tesla from the precession of induced magnetic moments. Both resonances generate pure spin currents in the heterostructures, which are detected by the heavy metal as peaks or dips in the open-circuit voltage. The pure-spin-current nature of the electrically detected signals is unambiguously confirmed by the reversal of the voltage polarity observed under two conditions: when switching the detector metal from Pt to Ta, reversing the sign of the spin Hall angle7–9, and when flipping the magnetic-field direction, reversing the magnon chirality4,5. The temperature dependence of the electrical signals at both resonances suggests that the spin current contains both coherent and incoherent magnon contributions, which is further confirmed by measurements of the spin Seebeck effect and is well described by a phenomenological theory. These findings reveal the unique characteristics of magnon excitations in antiferromagnets and their distinctive roles in spin–charge conversion in the high-frequency regime. Pure spin currents are simultaneously generated and detected electrically through sub-terahertz magnons in the antiferromagnetic insulator Cr2O3, demonstrating the potential of magnon excitations in antiferromagnets for high-frequency spintronic devices.

Conjugated polymers are of high potential in the development of spintronic devices. In this paper, we report systematic studies on spin transport properties of a semiconducting polymer PBDTTT-C-T in the permalloy/polymer/Pt trilayer using the spin pumping method. Pure spin current with long spin relaxation time is observed via the inverse spin Hall effect (ISHE) measurements. Furthermore, spin current is also found to propagate through the blend film consisting of a small amount of PBDTTT-C-T in an insulating matrix. The polymer blend exhibits a remarkably enhanced spin relaxation length (56 nm) and carrier mobility compared to pristine PBDTTT-C-T. From film microstructural characterizations, we propose that the enhanced spin/carrier transport properties are attributed to the formation of interlinked nanonetwork comprising of the PBDTTT-C-T chain bundles in the inert matrix to afford efficient intrachain charge conduction pathway. Temperature- dependent ISHE measurements support the spin-orbit coupling dominated spin relaxation mechanism.

Spin-orbit torques (SOTs) have emerged recently as practical tools to control the magnetization in spintronic devices, but it is debated what the underlying fundamental processes are that enable fast and energy-efficient magnetization switching. In this thesis, we investigate theoretically possible means of controlling magnetization in magnetic materials and heterostructures. To this end we employ relativistic density functional theory and linear-response theory to compute electrically induced spin currents and spin polarizations. We focus initially on two effects, the spin Hall effect (SHE) and the spin Rashba-Edelstein effect (SREE) that are due to spin-orbit coupling (SOC). First, we investigate the electric-field induced local magnetization in two antiferromagnets, CuMnAs and Mn2Au. Our explicit calculations show that there is not only an SREE-induced local spin polarization, but also a surprisingly large orbital polarization, due to what we call an orbital Rashba-Edelstein effect (OREE). We show that the induced orbital polarization does not require SOC and that it exhibits a staggered, Rashba symmetry in contrast to the induced spin polarization that can have Rashba- or Dresselhaus-like symmetries. Second, we investigate heavy-metal/ferromagnetic-metal bilayers, previously proposed to be exceptionally suited for large SOTs. Calculating the induced spin currents and accumulations, we find that there is an unusual magnetic spin Hall effect (MSHE), carrying a spin current whose polarization points along the electric field. The MSHE is odd under magnetization reversal, in contrast to the conventional SHE which is magnetization invariant. We investigate further the MSHE for the ferromagnets Fe, Co, and Ni, for which we show that the size of the MSHE can be comparable to that of the SHE and therefore they can in general not be ignored for SOTs. To access their thermal counterparts, we systematically investigate the spin Nernst and orbital Nernst effect (ONE) for 40 metallic monoatomic crystals. We predict large ONE values for the group-10 elements Ni, Pd, and Pt. Lastly, we go beyond linear-response theory by using a more advanced method based on non-equilibrium Green’s functions, to compute ab initio the impact of applied bias voltages and show that induced spin and orbital accumulations have different spatial profiles. Our work emphasizes that there exist various novel spin/orbital effects that have not received much attention yet but could become harnessed in future spin-orbitronics.

We report on the spin Hall effect in epitaxial Pt films with well-defined crystalline (200), (220), and (111) orientations and smooth surfaces. The magnitude of the spin Hall effect has been determined by spin–torque ferromagnetic resonance measurements on epitaxial Pt/Py heterostructures. We observed a 54% enhancement of the charge-to-spin conversion efficiency of the epitaxial Pt when currents are applied along the in-plane <002> direction. Temperature-dependent harmonic measurements on epitaxial Pt/Co/Ni heterostructures compared to a polycrystalline Pt/Co/Ni suggest the extrinsic mechanism underlying spin Hall effect in epitaxial Pt. Our work contributes to the development of energy-efficient spintronic devices by engineering the crystalline anisotropy of non-magnetic metals.

The control of spin current is pivotal for spintronic applications, especially for spin-orbit torque devices. Spin Hall effect (SHE) is a prevalent method to generate spin current. However, it is difficult to manipulate its spin polarization in nonmagnet. Recently, the discovery of spin current in ferromagnet offers opportunity to realize the manipulation. In the present work, the spin current in van der Waals ferromagnet Fe3GeTe2 (FGT) with varying magnetization is theoretically investigated. It has been observed that the spin current in FGT presents the nonlinear behavior with respect to magnetization. The in-plane and out-of-plane spin polarization emerges simultaneously, and the bilayer FGT can even exhibit arbitrary spin polarization thanks to the reduced symmetry. More intriguingly, the correlation between anomalous Hall effect (AHE) and spin anomalous Hall effect (SAHE) has been interpreted from the aspect of Berry curvature. This work illustrates that the interplay of symmetry and magnetism can effectively control the magnitude and spin polarization of the spin current, providing a practical method to realize exotic spin-orbit torques.

Spin-orbit torques (SOT) enable efficient electrical control of the magnetic state of ferromagnets, ferrimagnets and antiferromagnets. However, the conventional SOT has severe limitation that only in-plane spins accumulate near the surface, whether interpreted as a spin Hall effect (SHE) or as an Edelstein effect. Such a SOT is not suitable for controlling perpendicular magnetization, which would be more beneficial for realizing low-power-consumption memory devices. Here we report the observation of a giant magnetic-field-like SOT in a topological antiferromagnet Mn3Sn, whose direction and size can be tuned by changing the order parameter direction of the antiferromagnet. To understand the magnetic SHE (MSHE)- and the conventional SHE-induced SOTs on an equal footing, we formulate them as interface spin-electric-field responses and analyzed using a macroscopic symmetry analysis and a complementary microscopic quantum kinetic theory. In this framework, the large out-of-plane spin accumulation due to the MSHE has an inter-band origin and is likely to be caused by the large momentum-dependent spin splitting in Mn3Sn. Our work demonstrates the unique potential of antiferromagnetic Weyl semimetals in overcoming the limitations of conventional SOTs and in realizing low-power spintronics devices with new functionalities., Conventional spin-orbit torque (SOT) enables electrical control of in-plane spins, not suitable for perpendicular magnetization. Here, the authors observe a large magnetic-field-like SOT due to a large out-of-plane spin accumulation in topological antiferromagnet Mn3Sn.

The spin Hall effect is commonly considered to be related to spin-orbit interaction that causes a deflection of charge carriers according to their spin orientation into opposite directions. Thus, this effect creates spin currents in nonmagnetic materials with spin-orbit coupling. However, recently large spin Hall effects were predicted in coplanar kagome antiferromagnets ${\mathrm{Mn}}_{3}\mathrm{X}$ even when spin-orbit interaction is not considered. Therefore, these materials are interesting candidates for spintronic applications. In our theoretical study we reveal two sources that determine the intrinsic spin Hall signal of two-dimensional kagome antiferromagnets. The main contribution to the spin Hall signal is originating from the noncollinear magnetic texture localized on the Mn sites and it is maximal for coplanar systems. In addition to that, spin-orbit coupling or an out-of-plane tilting of the magnetic moments, which are equivalent within the framework of this model, reduce the spin Hall effect effectively.

For semiconductor spintronics, efficient spin generation in semiconductor and spin transfer to ferromagnetic metal (FM) are essentially required. Two-dimensional electron gas (2DEG) of semiconductor quantum wells is a promising system for generating spin via the Rashba-Edelstein effect (REE) because of its strong inversion symmetry breaking. In this study, we investigate spin accumulation through REE and spin Hall effect (SHE) in the 2DEG of an InAs quantum well. We use spatial- and polarization-resolved measurements of spin, which reveals that REE dominates SHE in 2DEG. Furthermore, REE in 2DEG induces a spin-orbit torque on FM in a 2DEG/insulator/FM heterostructure. Using direction- and time-resolved measurements of FM magnetization, we determine a sizeable fieldlike torque, which is attributed to the phonon-mediated spin transport from 2DEG to FM.

The inverse spin Hall effect (ISHE) has been recently demonstrated through the photoinduced inverse spin Hall effect (PISHE), where a focused laser normal to the device plane generates photocurrent that depends on the helicity of the photoexcitation. Here, we have employed a finite element method to rigorously simulate the helicity-dependent photocurrent (HDPC) under local helical photoexcitation, taking into account the complications of minority carriers, metal contact junctions, and spin relaxation. We found that the ISHE-induced electromotive force is inversely proportional to the doping level of the material, caused by the diffusion and drift current balance. Furthermore, the HDPC near the metal contact can either increase or decrease, because of the competing mechanisms of fast carrier recombination and spin relaxation at the contact. These simulation results provide insightful visualization of charge, spin, electric field, and current density distributions and deeper understanding of photoinduced ISHE.

We report the coherent-incoherent crossover of the spin Hall effect in Pd. By measuring spin-orbit torques generated by oxygen-incorporated Pd films, we find two distinct regimes of the spin Hall effect; one in which the spin Hall conductivity is insensitive to the electric conductivity, and the other in which the spin Hall conductivity decreases with decreasing electric conductivity. The crossover between the two regimes is consistent with the prediction of the coherent-incoherent crossover of the spin Hall effect, which is analogous to that of the anomalous Hall effect. Unlike the anomalous Hall effect, for which the crossover has been observed for a wide class of ferromagnets, the crossover of the spin Hall effect has been confirmed only for Pt and Pt-based alloys. The observation of the crossover of the spin Hall effect for Pd supports the generality of this phenomenon, illustrating an important correspondence between the spin Hall effect and the anomalous Hall effect.

Current-induced spin polarization in magnets has recently attracted much attention because out-of-plane spin polarization is allowed, as opposed to polycrystalline nonmagnetic heavy metals. We investigate the $\mathrm{Pt}$-impurity-doping dependence of current-induced out-of-plane spin polarization in $\mathrm{Fe}$ thin films with the use of magnetocircular dichroism. Current-induced out-of-plane spin polarization is clearly observed and attributed to anomalous spin-orbit torque, in which the spin-orbit torque induced by the spin Hall effect in $\mathrm{Fe}$ acts on the magnetic moments of $\mathrm{Fe}$ at the surfaces, generating out-of-plane spin polarization. Notably, current-induced out-of-plane spin polarization is significantly enhanced with increasing $\mathrm{Pt}$ concentration. $\mathrm{Pt}$ impurities with a large spin-orbit interaction induce the extrinsic spin Hall effect of $\mathrm{Fe}$, and consequently, the anomalous spin-orbit torques are enhanced. Our results provide a guiding principle for strengthening current-induced spin polarization in magnets.

It remains highly controversial whether long-distance spin transport or only Joule heating without spin transport exists in the disordered magnetic amorphous ${\mathrm{Y}}_{3}{\mathrm{Fe}}_{5}{\mathrm{O}}_{12}$ (a-YIG). Here, we carefully check and analyze the origin of the observed electrical signals in the Py/a-YIG/Pt-based nonlocal spin-transport experiments with both horizontal and vertical geometries, based on the ferromagnetic resonance (FMR)-induced spin pumping and inverse spin Hall effect. In all lateral nonlocal devices with a distance from 2.0 \ensuremath{\mu}m to 200 nm and vertical structures with a $\ensuremath{\ge}\text{40-nm-thick}$ a-YIG spacer layer, the spin-current-induced direct voltage peak signal is absent under FMR conditions, indicating that a-YIG does not possess long-distance spin transport. Furthermore, we demonstrate that a weak spin-torque FMR voltage signal, which gradually reduces to zero with increasing a-YIG thickness in the vertical geometry, is attributed to the leaked spin rectification voltage generated in the Py layer due to the electric leakage between the top Pt layer and the bottom Py layer through the pinhole defects in the thin middle a-YIG layer. Additionally, we find an improvement of the interfacial spin-mixing conductance due to spin accumulation in the interface of a-YIG/Py, which can significantly enhance spin-orbit torque efficiency in the ferromagnet/heavy metal systems with a disordered magnetic a-YIG buffer layer.

We predict that two distinct strong spin filtering mechanisms in two-terminal geometries at zero magnetic field should be exhibited by bismuthene-silicon nanostructures with cowrie shell-like geometries. One of these is resonant spin filtering where a peak in resonant transmission of one spin species through the nanostructure coincides with an antiresonant transmission dip for the other spin species. The second is strong nonresonant spin filtering where nonresonant transmission of one spin species is much weaker than that of the other spin species. These mechanisms arise from localized electronic states associated with strong disorder and strong spin-orbit coupling in the bismuthene and differ fundamentally from edge state-related spin filtering and from the spin Hall effect. Our density functional theory (DFT)-based simulations suggest that such cowrie shell-like nanostructures can form by spontaneous folding of bismuthene-silicon bilayer domes with armchair edges.

International audience; We show here theoretically and experimentally that a Rashba-split electron state inside a ferromagnet can efficiently convert a dynamical spin accumulation into an electrical voltage. The effect is understood to stem from the Rashba splitting but with a symmetry linked to the magnetization direction. It is experimentally measured by spin pumping in a CoFeB|MgO structure where it is found to be as efficient as the inverse spin Hall effect at play when Pt replaces MgO, with the extra advantage of not affecting the magnetic damping in the ferromagnet.

Spin Hall effect (SHE) is the generation of spin current due to an electric field, and has been observed in a variety of materials. The analogous spin Hall current can be induced by chemical potential and temperature gradient, both of which are present in hot and dense nuclear matter created in heavy-ion collisions. In this letter, we investigate the perspective of detecting spin Hall current experimentally. We propose to measure "directed spin flow", the first Fourier coefficients of local spin polarization of $\Lambda$ ($\bar{\Lambda}$) hyperon, at central collisions to probe spin Hall current. To quantify induced spin current, we evaluate relevant transport coefficients using thermal field theory. We benchmark the magnitude of the induced "directed spin flow" at two representatively collisions energies, namely $\sqrt{s}_{NN}=200~{\rm GeV}$ and $\sqrt{s}_{NN}=19.6~{\rm GeV}$, by employing a phenomenologically motivated freeze-out prescription. At both beam energies, the resulting "directed spin flow" ranges from $10^{-4}$ to $10^{-3}$, and is very sensitive to the rapidity., Comment: 8 pages, 4 figures; published version

The spin-orbit torque, a torque induced by a charge current flowing through the heavy-metal-conducting layer with strong spin-orbit interactions, provides an efficient way to control the magnetization direction in heavy-metal/ferromagnet nanostructures, required for applications in the emergent magnetic technologies like random access memories, high-frequency nano-oscillators, or bioinspired neuromorphic computations. We study the interface properties, magnetization dynamics, magnetostatic features, and spin-orbit interactions within the multilayer system Ti(2)/Co(1)/Pt(0-4)/Co(1)/MgO(2)/Ti(2) (thicknesses in nanometers) patterned by optical lithography on micrometer-sized bars. In the investigated devices, Pt is used as a source of the spin current and as a nonmagnetic spacer with variable thickness, which enables the magnitude of the interlayer ferromagnetic exchange coupling to be effectively tuned. We also find the Pt thickness-dependent changes in magnetic anisotropies, magnetoresistances, effective Hall angles, and, eventually, spin-orbit torque fields at interfaces. The experimental findings are supported by the relevant interface structure-related simulations, micromagnetic, macrospin, as well as the spin drift-diffusion models. Finally, the contribution of the spin-orbital Edelstein-Rashba interfacial fields is also briefly discussed in the analysis., This work was supported by the National Science Centre, Poland, Grant No. 2016/23/B/ST3/01430 (SPINORBITRONICS). Numerical calculations were supported by PL-GRID infrastructure. As part of cooperation, the multilayer systems were deposited in the Institute of Molecular Physics Polish Academy of Sciences and nanofabrication was performed at the Academic Centre for Materials and Nanotechnology of the AGH University of Science and Technology. The authors would like to express their gratitude to Prof. F. Stobiecki for helpful discussions on data analysis. The authors also thank Jakub Mojsiejuk for his help with preparing numerical calculations. W.S. acknowledges National Science Centre Grant No. UMO-2015/17/D/ST3/00500, Poland.

Topological insulators (TIs) are promising candidates for alternative computing device designs. In particular, they have great potential for spintronic devices, where utilization of electron spin rather than charge would allow for lower-power and higher-performance computing in next-generation architectures. Efficient conversion between spin and charge signals is crucial to spintronic technology. TIs provide highly efficient spin-to-charge conversion, as a result of their unique topological properties. One way to electrically quantify conversion efficiency is with the spin Hall effect (SHE). Here, we present SHE measurements of the topological insulator ${\mathrm{Bi}}_{2}{\mathrm{Te}}_{2.5}{\mathrm{Se}}_{0.5}$. Because of the topological nature of this material, we can measure the SHE without the use of ferromagnetic injectors or detectors. Using the nonlocal resistance, we measure spin Hall angles up to 2.4 with spin lifetimes up to 9 ps. Furthermore, ferromagnet-free measurement allows for quick diagnostics of the spin properties without the need to fabricate multilevel devices.

We generated electro magnetic transients with a frequency content up to the terahertz regime from Co 2 Fe 0.4 Mn 0.6 Si Heusler alloy/heavy-metal bilayers by excitation with fs-laser pulses. We ascribe the generation process to the inverse spin Hall effect. We compared our results with ferromagnetic resonance measurements to investigate the efficiency of interfacial spin currents. We observed that the efficiency of the THz radiation can be described by the spin-orbit coupling, nonetheless the interface properties play an important role.

THz spintronics emitters represent today novel sources for broadband emission using nanometer-scaled materials. We experimentally investigate and model THz spintronic emission based on the spin Hall effect in 3d/5d transition metals and on the inverse Rashba-Edelstein effect in the optimized topological insulator Bi1-xSbx.

Sizable Rashba spin-orbit coupling (SOC) is of critical importance in potential applications of two-dimensional materials in spintronics devices. However, due to the presence of vertical mirror symmetry, Rashba SOC is absent in 2H transition-metal dichalcogenide monolayers and the spin Hall conductivities are attributed only to Zeeman splitting. We study theoretically the electronic structures and intrinsic spin Hall conductivity of two-dimensional monolayer Janus MoSSe by performing first-principles calculations as well as by using the Kubo formula with Wannier interpolations. We find out that monolayer Janus MoSSe possesses considerable spin Hall conductivities both in conduction and valence bands. In valence bands, the spin Hall conductivity of Janus MoSSe is comparable to that in ${\mathrm{MoS}}_{2}$ and ${\mathrm{MoSe}}_{2}$. Moreover, in the conduction bands, the spin Hall conductivities are enhanced up to two orders of magnitude because of strong Rashba SOC. The spin Hall conductivity can be tuned significantly by adjusting the Fermi level or external strains. Our results show that monolayer Janus MoSSe could be a potential candidate to realize two-dimensional flexible spintronics devices.

It is now well established that the peculiar linear-in-momentum dependence of the Rashba (and of the Dresselhaus) spin-orbit coupling leads to the vanishing of the spin Hall conductivity in the bulk of a two-dimensional electron gas (2DEG). In this paper we discuss how generic magnetic couplings change this behaviour providing then a potential handle on the spin Hall effect. In particular we examine the influence of magnetic impurities and an in-plane magnetic field. We find that in both cases there is a finite spin Hall effect and we provide explicit expressions for the spin Hall conductivity. The results can be obtained by means of the quasiclassical Green function approach, that we have recently extended to spin-orbit coupled electron systems.

Gate-tunable spin-orbit interaction (SOI) and its related phenomena have been a new aspects of spintronics and spin-orbitronics. In this presentation, recent progress of gate modulation of the inverse spin Hall effect, its reciprocal effect and spin lifetime anisotropy in solids by a gate electric field will be introduced and discussed.

The spin mixing conductance is an important figure of merit for spin transport across an interface. This is a particularly important number for Spin Orbit Torque Magnetic Random Access Devices, where spin generated in one layer is used to provide the spin torque needed to flip the magnetization in an adjacent layer. Here the spins are generated in either an topological insulator (TI) or an heavy metal (HM). The overall efficiency of such a device depends on both the charge to spin conversion in the spin generation layer and the spin mixing conductance of the interface.

Since the 1980s, the generation and detection of spin currents has relied on ferromagnets. Their switching today relies on spin-orbit torque from heavy metals. Nevertheless, spin injection in semiconductors has rather low efficiency. Ferroelectric Rashba semiconductors (FERSC) [1,2] may constitute a new paradigm for semiconductor spintronics, thanks to the combination of semiconductivity, large spin-orbit interaction, and the non-volatility provided by ferroelectricity. Here we report the room-temperature ferroelectric switching of spin-to-charge conversion in epitaxial GeTe films. We first show that ferroelectricity in GeTe can be reversed by electrical gating despite its high carrier density. Then, we reveal a spin-to-charge conversion as effective as in Pt, but whose sign switches with the ferroelectric polarization. These results open a route towards devices combining spin-logic and memory integrated into a silicon-compatible material.

In this work we argue that the electron skew scattering on paramagnetic impurities in non-magnetic semiconductors possesses a remarkable fingerprint, allowing us to differentiate it directly from other microscopic mechanisms of the emergent Hall response. We demonstrate theoretically that the exchange interaction between the impurity magnetic moment and itinerant carriers leads to the emergence of an electric Hall current persisting even at zero electron spin polarization. We describe two microscopic mechanisms behind this effect, and propose an essentially all-electric scheme based on a spin-injection ferromagnetic-semiconductor device, which allows one to reveal the effect of paramagnetic impurities on the Hall phenomena via the detection of the spin polarization-independent terms in the Hall voltage.

The link between magnetization and Spin Hall Effect (SHE) has remained mostly unclear for now. In a first part of this contribution, we study oh the presence of the magnetization affect the SHE, by performing in the weak ferromagnet NiCu Spin Pumping-FMR measurements across the ferromagnetic / paramagnetic critical temperature. We show that the high spin Hall effects which can be obtained in 3d ferromagnets seems to be independent of the magnetic phase. In a second part, we show that the spin absorption process in a ferromagnetic material depends on the spin orientation relative to the magnetization. Using a ferromagnet to absorb the pure spin current created within a lateral spin valve, we evidence and quantify a sizable orientation dependence of the spin absorption in Co, CoFe, and NiFe. These experiments allow us to determine the spin-mixing conductance, an elusive but fundamental parameter of the spin-dependent transport.

A promising way for the conversion from charge current to spin current is to exploit the spin Hall effect (SHE). Aside from the usage of elemental nonmagnetic materials, element doping or alloying is a promising way to develop a spin Hall material. In order to reveal the optimum composition for achieving the large SHE in the Cu-Ir binary alloys, we exploited the high-throughput combinatorial technique based on spin Peltier imaging. They discovered that the non-equilibrium Cu-Ir alloys beyond the solubility limit are candidates to achieve the large SHE, in which a large spin-Hall angle of ~ 6% was obtained for Cu76Ir24. In addition to the aspect from SHE, we also found that Cu-Ir is a nonmagnetic spacer layer material allowing us to realize moderately strong antiferromagnetic coupling (AFC) between two ferromagnetic layers separately by Cu-Ir. The simultaneous achievement of AFC and SHE makes the Cu-Ir an useful material for antiferromagnetic spintronics.