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The subclass of collinear antiferromagnets where spin Kramers degeneracy is broken -- resulting in ferromagnetic-like properties -- offers exciting new opportunities in magnetism and hence motivates the reasoned expansion of the material base for these so-called altermagnets. Here, we show that Ruddlesden-Popper and perovskite phases are generic hosts for altermagnetic behavior. Using first-principles calculations, we demonstrate altermagnetism in prototypical nickel-based systems such as La$_2$NiO$_4$ and identify additional candidates, including the superconducting La$_3$Ni$_3$O$_7$ and the multiferroic BiFeO$_3$. These materials span insulating, semiconducting, and metallic conduction types, with computed nonrelativistic spin splittings reaching up to 250~meV. Our analysis also reveals the presence of accidental nodes and distinct topologies in the spin-momentum texture at the Brillouin-zone boundary, suggesting a refined classification for altermagnetic materials beyond the $d$-wave or higher even-parity wave classes. In addition, we address formal inconsistencies in the traditional classification of magnetically ordered systems, proposing resolutions grounded in the altermagnetic framework, and point out the potential for altermagnetic behavior in systems beyond collinear antiferromagnets with perfectly compensated magnetization, broadening the scope for future exploration., Comment: v1: 7 pages, 5 figures, 1 table; v2: 8 pages, 5 figures, 1 table, additional references

Nickelate superconductors are outstanding materials with intriguing analogies with the cuprates. These analogies suggest that their superconducting mechanism may be unconventional, although this fundamental question is currently under debate. Here, we scrutinize the role played by electronic correlations in enhancing the electron-phonon coupling in the infinite-layer nickelates and the extent to which this may promote superconductivity. Specifically, we use $ab$ $initio$ many-body perturbation theory to perform state-of-the-art $GW$ and Eliashberg-theory calculations. We find that the electron-phonon coupling is effectively enhanced compared to density-functional-theory calculations. This enhancement may lead to low-$T_c$ superconductivity in the parent compounds already. However, it remains marginal in the sense that it cannot explain the record $T_c$s obtained with doping. This circumstance implies that conventional superconductivity is preempted by another pairing mechanism in the infinite-layer nickelates., Comment: 6 pages, 4 figures, 1 table + Supplementary Information

Pnictogens and chalcogens are both viable anions for promoting Fe-based superconductivity and intense research activity in the related families has established systematic correlation between the Fe-anion height and the superconducting critical temperature $T_c$, with an optimum Fe-anion height of $\sim$ 1.38 \r{A}. Here, we report the discovery of superconductivity in a novel compound LaFeSiO$_{1-\delta}$ that incorporates a crystallogen element, Si, and challenges the above picture: considering the strongly squeezed Fe-Si height of 0.94 \r{A}, the superconducting transition at $T_{c}$ = 10 K is unusually high. In the normal state, the resistivity displays non-Fermi-liquid behavior while NMR experiments evidence weak antiferromagnetic fluctuations. According to first-principles calculations, the Fermi surface of this material is dominated by hole pockets without nesting properties, which explains the strongly suppressed tendency towards magnetic order and suggests that the emergence of superconductivity materializes in a distinct set-up, as compared to the standard $s_\pm$- and $d$-wave electron-pocket-based situations. These properties and its simple-to-implement synthesis make LaFeSiO$_{1-\delta}$ a particularly promising platform to study the interplay between structure, electron correlations and superconductivity., Comment: 13 pages, 6 figures

The discovery of superconductivity in infinite-layer nickelates has attracted much attention due to their association to the high-$T_c$ cuprates. Cuprate superconductivity was first demonstrated in bulk samples and subsequently in thin films. In the nickelates, however, the situation has been reversed: although surging as a bulk phenomenon, nickelate superconductivity has only been reported in thin films so far. At the same time, the specifics of infinite-layer nickelates yield distinct interface and surface effects that determine their bulk vs thin-film behavior. In this paper, we provide an overview on these important aspects., Comment: 6 pages, 2 figures. Front. Phys.

Geometric effects in the infinite-layer nickelates $R$NiO$_2$ associated with the relative size of the $R$-site atom are investigated via first-principles calculations. We consider, in particular, the prospective YNiO$_2$ material to illustrate the impact of these effects. Compared to LaNiO$_2$, we find that the La $\to$ Y substitution is equivalent to a pressure of 19 GPa and that the presence of topotactic hydrogen can be precluded. However, the electronic structure of YNiO$_2$ departs from the cuprate-like picture due to an increase in both self-doping effect and $e_g$ hybridization. Furthermore, we find that geometric effects introduce a quantum critical point in the $R$NiO$_2$ series. This implies a $P4/mmm \leftrightarrow I4/mcm$ structural transformation associated to a $A_3^+$ normal mode, according to which the oxygen squares undergo an in-plane rotation around Ni that alternates along $c$. We find that such a $A_3^+$-mode instability has a generic character in the infinite-layer nickelates and can be tuned via either the effective $R$-site atom size or epitaxial strain., Comment: 6 pages, 4 figures, 4 tables

The discovery of superconductivity in the infinite-layer nickelates has opened new perspectives in the context of quantum materials. We analyze, via first-principles calculations, the electronic properties of La$_2$NiO$_3$F -- the first single-layer T'-type nickelate -- and compare these properties with those of related nickelates and isostructural cuprates. We find that La$_2$NiO$_3$F is essentially a single-band system with a Fermi surface dominated by the Ni-3$d_{x^2-y^2}$ states with an exceptional 2D character. In addition, the hopping ratio is similar to that of the highest $T_c$ cuprates and there is a remarkable $e_g$ splitting together with a charge transfer energy of 3.6~eV. According to these descriptors, along with a comparison to Nd$_2$CuO$_4$, we thus indicate single-layer T'-type nickelates of this class as very promising analogs of cuprate-like physics while keeping distinct Ni$^{1+}$ features., Comment: 5 + epsilon pages, 4 figures, 2 tables

After decades of fundamental research, unconventional superconductivity has recently been demonstrated in rare-earth infinite-layer nickelates. The current view depicts these systems as a new category of superconducting materials, as they appear to be correlated metals with distinct multiband features in their phase diagram. Here, we provide an overview of the state of the art in this rapidly evolving topic., Comment: 9 pages, 6 figures. Review article for the JETP special issue celebrating I. E. Dzyaloshinskii's 90th birthday. v2 updated references & minor typos corrected

Infinite-layer nickelate thin films materialize an intriguing new platform for high-temperature unconventional superconductivity, with LaNiO$_2$/SrTiO$_3$ as reference setup. We discuss the relative stability of the elementary interfaces of this system and determine the corresponding electronic band structure. We find substantial changes compared to the bulk, in particular in relation to the 5$d$ orbital contributions to the low-energy physics which can be totally replaced by purely Ni-3$d$ flat bands. The $d^9$ configuration characteristic of cuprates can thus be supplemented by an extra interfacial ingredient destabilizing the normal non-superconducting state in these heterostructures., Comment: 6 pages, 2 tables, 3 figures + Supplemental Material. v2: updated refs., extra figure + improved discussion of interfacial structure. v3: new appendix

We study theoretically the fluoro-nickelate series $A$NiF$_2$ ($A=$ Li, Na, K, Rb, Cs) in the tetragonal $P4/mmm$ infinite-layer structure. We use density functional theory to determine the structural parameters and the electronic band structure of these unprecedented compounds. Thus, we predict these materials as model $d^9$ systems where the Ni$^{1+}$ oxidation is realized and the low-energy physics is completely determined by the Ni-3$d$ bands only. Fluoro-nickelates of this class thus offer an ideal platform for the study of intriguing physics that emerges out of the special $d^9$ electronic configuration, notably high-temperature unconventional superconductivity., Comment: 6 pages, 4 tables, and 6 figures

We compute the nominal magnetic penetration depth of $R$NiO$_2$ ($R =$ La, Nd) from first principles calculations and discuss the results in relation to the superconducting $T_c$. We find a marked discrepancy with the well established phenomenology that correlates these two quantities in cuprates (Uemura plot). We also consider the 2D ultrathin limit and estimate the maximum attainable $T_c$ to be $\sim 180$ K according to the Nelson-Kosterliz universal relation between the superfluid density and the transition temperature., Comment: 3 pages, 1 table, 2 figures

Unconventional superconductivity has recently been discovered in the first iron-based superconducting silicide LaFeSiH. By using the complementary techniques of muon spin rotation, tunneling diode oscillator and density functional theory, we investigate the magnetic penetration depth and thereby the superconducting gap of this novel high-temperature superconductor. We find that the magnetic penetration depth displays a sub-$T^2$ behavior in the low-temperature regime below $T_c/3$, which evidences a nodal structure of the gap (or a gap with very deep minima). Even if the topology of the computed Fermi surface is compatible with the $s_\pm$-wave case with accidental nodes, its nesting and orbital-content features may eventually result in a $d$-wave state, more unusual for high-temperature superconductors of this class., Comment: 6 pages, 2 tables, 3 figures; v2: improved discussion and organization, 4 figs, 1 table

Transverse-field muon-spin rotation ($\mu$SR) experiments were performed on a single crystal sample of the non-centrosymmetric system MnSi. The observed angular dependence of the muon precession frequencies matches perfectly the one of the Mn-dipolar fields acting on the muons stopping at a 4a position of the crystallographic structure. The data provide a precise determination of the magnetic dipolar tensor. In addition, we have calculated the shape of the field distribution expected below the magnetic transition temperature $T_C$ at the 4a muon-site when no external magnetic field is applied. We show that this field distribution is consistent with the one reported by zero-field $\mu$SR studies. Finally, we present ab initio calculations based on the density-functional theory which confirm the position of the muon stopping site inferred from transverse-field $\mu$SR. In view of the presented evidence we conclude that the $\mu$SR response of MnSi can be perfectly and fully understood without invoking a hypothetical magnetic polaron state., Comment: 10 pages, 12 figures

We report on an ab initio strategy based on Density Functional Theory to identify the muon sites. Two issues must be carefully addressed, muon delocalization about candidate interstitial sites and local structural relaxation of the atomic positions due to $\mu^+$-sample interaction. Here, we report on the validation of our strategy on two wide band gap materials, LiF and YF3, where localization issues are important because of the interplay between muon localization and lattice relaxation, Comment: 8 pages, 6 figures

We address the in-plane pressure-dependent electrodynamics of graphite through synchrotron based infrared spectroscopy and ab initio Density Functional Theory calculations. The Drude term remarkably increases upon pressure application, as a consequence of an enhancement of both electron and hole charge densities. This is due to the growth of the band dispersion along the k_z direction between the K and H points of the Brillouin zone. On the other hand, the mid-infrared optical conductivity between 800 and 5000 cm-1 is almost flat, and very weakly pressure dependent, at least up to 7 GPa. This demonstrates a surprising robustness of the graphene-like universal quantum conductance of graphite, even when the interlayer distance is significantly reduced., Comment: 5 pages, 4 figures; final version accepted in PRB

The effects of high-temperature vacuum-annealing induced Mg deficiency in MgB2 single crystals grown under high pressure were investigated. As the annealing temperature was increased from 800 to 975 C, the average Mg content in the MgB2 crystals systematically decreased, while Tc remains essentially unchanged and the superconducting transition slightly broadens from 0.55 K to 1.3 K. The reduction of the superconducting volume fraction was noticeable already after annealing at 875 C. Samples annealed at 975 C are partially decomposed and the Mg site occupancy is decreased to 0.92 from 0.98 in as-grown crystals. Annealing at 1000 C completely destroys superconductivity. X-ray diffraction analysis revealed that the main final product of decomposition is polycrystalline MgB4 and thus the decomposition reaction of MgB2 can be described as 2MgB2(s) = MgB4(s) + Mg(g). First-principles calculations of the Mg1-x(VMg)xB2 electronic structure, within the supercell approach, show a small downshift of the Fermi level. Holes induced by the vacancies go to both sigma and pi bands. These small modifications are not expected to influence Tc, in agreement with observations. The significant reduction of the superconducting volume fraction without noticeable Tc reduction indicates the coexistence, within the same crystal, of superconductive and non-superconductive electronic phases, associated with regions rich and poor in Mg vacancies., Comment: 21 pages, 1 table, 6 figures, PRB accepted

We present the first results of directional point-contact measurements in Mg_{1-x}Mn_{x}B_2 single crystals, with x up to 0.015 and bulk T_c down to 13.3 K. The order parameters Delta_{sigma} and Delta_{pi} were obtained by fitting the conductance curves with the two-band Blonder-Tinkham-Klapwijk (BTK) model. Both Delta_{pi} and Delta_{sigma} decrease with the critical temperature of the junctions T_c^A, but remain clearly distinct up to the highest Mn content. Once analyzed within the Eliashberg theory, the results indicate that spin-flip scattering is dominant in the sigma band, as also confirmed by first-principle band structure calculations., Comment: 4 pages, 5 eps figures. New theoretical results added, text and some figures changed. References added

We analyze Ge-related defects in Ge-doped SiO_2 using first-principles density functional techniques. Ge is incorporated at the level of ~ 1 mol % and above. The growth conditions of Ge:SiO_2 naturally set up oxygen deficiency, with vacancy concentration increasing by a factor 10^5 over undoped SiO_2, and O vacancies binding strongly to Ge impurities. All the centers considered exhibit potentially EPR-active states, candidates for the identification of the Ge(n) centers. Substitutional Ge produces an apparent gap shrinking via its extrinsic levels., Comment: RevTeX 4 pages, 2 ps figures

We report direct first-principles density-functional calculations of the piezoelectric tensor $\tensor{d}$ relating polarization to applied stress for the binary compounds AlN, GaN, and InN. The values of $\tensor{d}$ are rather sensitive to the choice of the exchange-correlation functional, and results are presented for both the local-density and gradient approximations. A comparison with experiment and with values predicted indirectly from the elastic and e-piezoconstant tensors is also presented., Comment: RevTeX 3 pages, no figures

A number of diverse bulk properties of the zincblende and wurtzite III-V nitrides AlN, GaN, and InN, are predicted from first principles within density functional theory using the plane-wave ultrasoft pseudopotential method, within both the LDA (local density) and GGA (generalized gradient) approximations to the exchange-correlation functional. Besides structure and cohesion, we study formation enthalpies (a key ingredient in predicting defect solubilities and surface stability), spontaneous polarizations and piezoelectric constants (central parameters for nanostructure modeling), and elastic constants. Our study bears out the relative merits of the two density functional approaches in describing diverse properties of the III-V nitrides (and of the parent species N$_2$, Al, Ga, and In), and leads us to conclude that the GGA approximation, associated with high-accuracy techniques such as multiprojector ultrasoft pseudopotentials or modern all-electron methods, is to be preferred in the study of III-V nitrides., Comment: RevTeX 6 pages, 12 tables, 0 figures

We demonstrate that polarization-related quantities in semiconductors can be predicted accurately from first-principles calculations using the appropriate approach to the problem, the Berry-phase polarization theory. For III-V nitrides, our test case, we find polarizations, polarization differences between nitride pairs, and piezoelectric constants quite close to their previously established values. Refined data are nevertheless provided for all the relevant quantities., Comment: RevTeX 4 pages, no figures

Huge built-in electric fields have been predicted to exist in wurtzite III-V nitrides thin films and multilayers. Such fields originate from heterointerface discontinuities of the macroscopic bulk polarization of the nitrides. Here we discuss the background theory, the role of spontaneous polarization in this context, and the practical implications of built-in polarization fields in nitride nanostructures. To support our arguments, we present detailed self-consistent tight-binding simulations of typical nitride QW structures in which polarization effects are dominant., Comment: 11 pages, 9 figures, uses revtex/epsf. submitted to PRB

The free-carrier screening of macroscopic polarization fields in wurtzite GaN/InGaN quantum wells lasers is investigated via a self-consistent tight-binding approach. We show that the high carrier concentrations found experimentally in nitride laser structures effectively screen the built-in spontaneous and piezoelectric polarization fields, thus inducing a ``field-free'' band profile. Our results explain some heretofore puzzling experimental data on nitride lasers, such as the unusually high lasing excitation thresholds and emission blue-shifts for increasing excitation levels., Comment: RevTeX 4 pages, 4 figures

Huge built-in electric fields have been predicted to exist in wurtzite III-V nitrides thin films and multilayers. Such fields originate from heterointerface discontinuities of the macroscopic bulk polarization of the nitrides. Here we discuss the background theory, the role of spontaneous polarization in this context, and the practical implications of built-in polarization fields in nitride nanostructures. To support our arguments, we present detailed self-consistent tight-binding simulations of typical nitride QW structures in which polarization effects are dominant., Comment: RevTeX 10 pages, 9 figures

Ab initio calculations predict that Be is a shallow acceptor in GaN. Its thermal ionization energy is 0.06 eV in wurtzite GaN; the level is valence resonant in the zincblende phase. Be incorporation is severely limited by the formation of Be_3N_2. We show however that co-incorporation with reactive species can enhance the solubility. H-assisted incorporation should lead to high doping levels in MOCVD growth after post-growth annealing at about 850 K. Be-O co-incorporation produces high Be and O concentrations at MBE growth temperatures., Comment: revised Feb 24 1997

Impurity levels and formation energies of acceptors in wurtzite GaN are predicted ab initio. Be_Ga is found to be the shallow (thermal ionization energy $\sim$ 0.06 eV); $Mg_{Ga}$ and $Zn_{Ga}$ are mid-deep acceptors (0.23 eV and 0.33 eV respectively); $Ca_{Ga}$ and $Cd_{Ga}$ are deep acceptors ($\sim$0.65 eV); $Si_N$ is a midgap trap with high formation energy; finally, contrary to recent claims, $C_N$ is a deep acceptor (0.65 eV). Interstitials and heteroantisites are energetically not competitive with substitutional incorporation., Comment: 4 pages, to appear in "The Physics of Semiconductors"