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Noncollinear ferroic materials are sought after as testbeds to explore the intimate connections between topology and symmetry, which result in electronic, optical and magnetic functionalities not observed in collinear ferroic materials. For example, ferroaxial materials have ordered rotational structural distortions that break mirror symmetry and induce chirality. When ferroaxial order is coupled with ferroelectricity arising from a broken inversion symmetry, it offers the prospect of electric-field-control of the ferroaxial distortions and opens up new tunable functionalities. However, chiral ferroelectrics, especially ones stable at room temperature, are rare. We report the discovery of a strain-stabilized, room-temperature chiral ferroelectric phase in single crystals of BaTiS$_3$, a quasi-one-dimensional (1D) hexagonal chalcogenide. Using first-principles calculations, we predict the stabilization of this multiferroic phase having $P6_3$ space group for biaxial tensile strains exceeding 1.5% applied on the basal ab-plane of the room temperature $P6_3cm$ phase of BaTiS$_3$. The chiral ferroelectric phase is characterized by rotational distortions of select TiS$_6$ octahedra around the long $c$-axis and polar displacement of Ti atoms along the $c$-axis. We used an innovative approach using focused ion beam milling to make appropriately strained samples of BaTiS$_3$. The ferroaxial and ferroelectric distortions, and their domains in $P6_3$-BaTiS$_3$ were directly resolved using atomic resolution scanning transmission electron microscopy. Landau-based phenomenological modeling predicts a strong coupling between the ferroelectric and the ferroaxial order making $P6_3$-BaTiS$_3$ an attractive test bed for achieving electric-field control of chirality-related phenomena such as circular photo-galvanic current and the Rashba effect., Comment: 19 pages, 4 figures

The discovery of ferroelectricity in hafnia-based materials have boosted the potential of incorporating ferroelectrics in advanced electronics, thanks to their compatibility with silicon technology. However, comprehending why these materials defy the common trend of reduced ferroelectric ordering at the nanoscale, and the mechanism that stabilizes the ferroelectric phase (absent in hafnia phase diagram) presents significant challenges to traditional knowledge of ferroelectricity. In this work, we show that the formation of the orthorhombic ferroelectric phase (o-FE, space group Pca21) of the single-crystalline epitaxial films of 10% La-doped HfO2 (LHO) on (111)-oriented yttria stabilized zirconia (YSZ) relies on the stability of the high-pressure orthorhombic antiferroelectric phase (o-AFE, space group Pbca). Our detailed structural characterizations demonstrate that as-grown LHO films represent largely the o-AFE phase being thermodynamically stabilized by the compressive strain. Our Kelvin probe force microscopy studies show, under mechanical poling, the o-AFE phase is converted to the o-FE phase which remains stable under ambient conditions. We find that the orthorhombic phase stability is enhanced in thinner films down to one-unit-cell thickness, a trend that is unknown in any other ferroelectric films. This is due to the vanishing depolarization field of the o-AFE phase and the isomorphic LHO/YSZ interface, supporting strain-enhanced ferroelectricity in the ultrathin films. This results in an unprecedented increase of the Curie temperature up to 850 {\deg}C, the highest reported for sub-nanometer-thick ferroelectrics. Overall, our findings opens the way for advanced engineering of hafnia-based materials for ferroelectric applications and heralding a new frontier of high-temperature ferroelectrics at the two-dimensional limit.

Ion transport across solid solid interfaces is often slower than through the bulk of a material, impeding the charge and discharge rate of batteries. Designing highly conductive interfaces is challenging due to the need to probe ion conduction at individual interfaces and correlate it with the local structure. In this study, we address this challenge by enabling the simultaneous measurements of local Li-dominated optical phonons and ion distributions, using high-energy and high-spatial-resolution spectroscopy in a scanning transmission electron microscope (STEM). Further, this method allows for a direct correlation of ion conduction with interfacial structures identified by STEM imaging. By examining diverse individual interfaces of LiCoO2, we reveal the sensitivity of ion conduction to interface atomic-scale structure and chemistry. Our method enables correlative analysis of ion transport behavior, and atomic and band structures, and can serve as a robust experimental approach for identifying interface structures that offer high conductivity and cyclability for batteries.

The spin, charge, and lattice degrees of freedom and their interplay in high entropy oxides were intensively investigated in recent years. However, how the orbital degree of freedom is affected by the extreme disorder in high entropy oxides hasn't been studied. In this work, using perovskite structured \textit{R}VO$_3$ as a materials playground, we report how the disorder arising from mixing different rare earth ions at the rare earth site affects the orbital ordering of V$^{3+}$ t$_{2g}$-electrons. Since each member of \textit{R}VO$_3$ crystallizes into the same orthorhombic \textit{Pbnm} structure, the configurational entropy should not be critical for the success synthesis of (\textit{R}$_1$,...,\textit{R}$_n$)VO$_3$. The spin and orbital ordering was studied by measuring magnetic properties and specific heat of single crystals. Rather than the number and type of rare earth ions, the average ionic radius and size variance are the key factors determining the spin and orbital order in (\textit{R}$_1$,...,\textit{R}$_n$)VO$_3$. When the size variance is small, the average ionic radius takes precedence in dictating spin and orbital order. Increasing size variance suppresses the G-type orbital order and C-type magnetic order but favors the C-OO/G-AF state and the spin-orbital entanglement. These findings suggest that the extreme disorder introduced by mixing multiple rare earth ions in high entropy perovskites might be employed to preserve the orbital degree of freedom to near the magnetic ordering temperature, which is necessary for the electronic driven orbital ordering in a Kugel-Khomskii compound., Comment: 3 figures, 7 pages

Structural disorder has been shown to enhance and modulate magnetic, electrical, dipolar, electrochemical, and mechanical properties of materials. However, the possibility of obtaining novel optical and optoelectronic properties from structural disorder remains an open question. Here, we show unambiguous evidence of disorder in the form of anisotropic, picoscale atomic displacements modulating the refractive index tensor and resulting in the giant optical anisotropy observed in BaTiS$_3$, a quasi-one-dimensional hexagonal chalcogenide. Single crystal X-ray diffraction studies reveal the presence of antipolar displacements of Ti atoms within adjacent TiS$_6$ chains along the c-axis, and three-fold degenerate Ti displacements in the a-b plane. $^{47/49}$Ti solid-state NMR provides additional evidence for those Ti displacements in the form of a three-horned NMR lineshape resulting from a low symmetry local environment around Ti atoms. We used scanning transmission electron microscopy to directly observe the globally disordered Ti a-b plane displacements and find them to be ordered locally over a few unit cells. First-principles calculations show that the Ti a-b plane displacements selectively reduce the refractive index along the ab-plane, while having minimal impact on the refractive index along the chain direction, thus resulting in a giant enhancement in the optical anisotropy. By showing a strong connection between structural disorder with picoscale displacements and the optical response in BaTiS$_3$, this study opens a pathway for designing optical materials with high refractive index and functionalities such as large optical anisotropy and nonlinearity., Comment: 24 pages, 3 figures

Here we show that compressive sensing allow 4-dimensional (4-D) STEM data to be obtained and accurately reconstructed with both high-speed and low fluence. The methodology needed to achieve these results compared to conventional 4-D approaches requires only that a random subset of probe locations is acquired from the typical regular scanning grid, which immediately generates both higher speed and the lower fluence experimentally. We also consider downsampling of the detector, showing that oversampling is inherent within convergent beam electron diffraction (CBED) patterns, and that detector downsampling does not reduce precision but allows faster experimental data acquisition. Analysis of an experimental atomic resolution yttrium silicide data-set shows that it is possible to recover over 25dB peak signal-to-noise in the recovered phase using 0.3% of the total data.

$\alpha$-RuCl$_3$, a well-known candidate material for Kitaev quantum spin liquid, is prone to stacking disorder due to the weak van der Waals bonding between the honeycomb layers. After a decade of intensive experimental and theoretical studies, the detailed correlation between stacking degree of freedom, structure transition, magnetic and thermal transport properties remains unresolved. In this work, we reveal the effects of a small amount of stacking disorder inherent even in high quality $\alpha$-RuCl$_3$ crystals. This small amount of stacking disorder results in the variation of the magnetic ordering temperature, suppresses the structure transition and thermal conductivity. Crystals with minimal amount of stacking disorder have a T$_N>$7.4\,K and exhibit a well-defined structure transition around 140\,K upon cooling. For those with more stacking faults and a T$_N$ below 7\,K, the structure transition occurs well below 140\,K upon cooling and is incomplete, manifested by the diffuse streaks and the coexistence of both high temperature and low temperature phases down to the lowest measurement temperature. Both types of crystals exhibit oscillatory field dependent thermal conductivity and a plateau-like feature in thermal Hall resistivity in the field-induced quantum spin liquid state. However, $\alpha$-RuCl$_3$ crystals with minimal amount of stacking disorder have a higher thermal conductivity that pushes the thermal Hall conductivity to be closer to the half-integer quantized value. These findings demonstrate a strong correlation between layer stacking, structure transition, magnetic and thermal transport properties, underscoring the importance of interlayer coupling in $\alpha$-RuCl$_3$ despite the weak van der Waals bonding.

In modern optics, materials with large birefringence ({\Delta}n, where n is the refractive index) are sought after for polarization control (e.g. in wave plates, polarizing beam splitters, etc.), nonlinear optics and quantum optics (e.g. for phase matching and production of entangled photons), micromanipulation, and as a platform for unconventional light-matter coupling, such as Dyakonov-like surface polaritons and hyperbolic phonon polaritons. Layered "van der Waals" materials, with strong intra-layer bonding and weak inter-layer bonding, can feature some of the largest optical anisotropy; however, their use in most optical systems is limited because their optic axis is out of the plane of the layers and the layers are weakly attached, making the anisotropy hard to access. Here, we demonstrate that a bulk crystal with subtle periodic modulations in its structure -- Sr9/8TiS3 -- is transparent and positive-uniaxial, with extraordinary index n_e = 4.5 and ordinary index n_o = 2.4 in the mid- to far-infrared. The excess Sr, compared to stoichiometric SrTiS3, results in the formation of TiS6 trigonal-prismatic units that break the infinite chains of face-shared TiS6 octahedra in SrTiS3 into periodic blocks of five TiS6 octahedral units. The additional electrons introduced by the excess Sr subsequently occupy the TiS6 octahedral blocks to form highly oriented and polarizable electron clouds, which selectively boost the extraordinary index n_e and result in record birefringence ({\Delta}n > 2.1 with low loss). The connection between subtle structural modulations and large changes in refractive index suggests new categories of anisotropic materials and also tunable optical materials with large refractive-index modulation and low optical losses., Comment: Main text + supplementary

Two-dimensional van der Waals MnBi$_{2n}$Te$_{3n+1}$ (n = 1, 2, 3, 4) compounds have been recently found to be intrinsic magnetic topological insulators rendering quantum anomalous Hall effect and diverse topological states. Here, we summarize and compare the crystal and magnetic structures of this family, and discuss the effects of chemical composition on their magnetism. We found that a considerable fraction of Bi occupies at the Mn sites in MnBi$_{2n}$Te$_{3n+1}$ (n = 1, 2, 3, 4) while Mn is no detectable at the non-magnetic atomic sites within the resolution of neutron diffraction experiments. The occupancy of Mn monotonically decreases with the increase of n. The polarized neutron diffraction on the representative MnBi$_{4}$Te$_{7}$ reveals that its magnetization density is exclusively accumulated at the Mn site, in good agreement with the results from the unpolarized neutron diffraction. The defects of Bi at the Mn site naturally explain the continuously reduced saturated magnetic moments from n = 1 to n = 4. The experimentally estimated critical exponents of all the compounds generally suggest a three-dimensional character of magnetism. Our work provides material-specified structural parameters that may be useful for band structure calculations to understand the observed topological surface states and for designing quantum magnetic materials through chemical doping., Comment: 5 figures, typos corrected

Van der Waals materials composed of stacks of individual atomic layers have attracted considerable attention due to their exotic electronic properties that can be altered by, for example, manipulating the twist angle of bilayer materials or the stacking sequence of trilayer materials. To fully understand and control the unique properties of these few-layer materials, a technique that can provide information about their local in-plane structural deformations, twist direction, and out-of-plane structure is needed. In principle, interference in overlap regions of Bragg disks originating from separate layers of a material encodes three-dimensional information about the relative positions of atoms in the corresponding layers. Here, we describe an interferometric four-dimensional scanning transmission electron microscopy technique that utilizes this phenomenon to extract precise structural information from few-layer materials with nm-scale resolution. We demonstrate how this technique enables measurement of local pm-scale in-plane lattice distortions as well as twist direction and average interlayer spacings in bilayer and trilayer graphene, and therefore provides a means to better understand the interplay between electronic properties and precise structural arrangements of few-layer 2D materials.

The van der Waals compound, MnBi$_2$Te$_4$, is the first intrinsic magnetic topological insulator, providing a materials platform for exploring exotic quantum phenomena such as the axion insulator state and the quantum anomalous Hall effect. However, intrinsic structural imperfections lead to bulk conductivity, and the roles of magnetic defects are still unknown. With higher concentrations of same types of magnetic defects, the isostructural compound MnSb$_2$Te$_4$ is a better model system for a systematic investigation of the connections among magnetic, topology and lattice defects. In this work, the impact of antisite defects on the magnetism and electronic structure is studied in MnSb$_2$Te$_4$. Mn-Sb site mixing leads to complex magnetic structures and tunes the interlayer magnetic coupling between antiferromagnetic and ferromagnetic. The detailed nonstoichiometry and site-mixing of MnSb$_2$Te$_4$ crystals depend on the growth parameters, which can lead to $\approx$40\% of Mn sites occupied by Sb and $\approx$15\% of Sb sites by Mn in as-grown crystals. Single crystal neutron diffraction and electron microscopy studies show nearly random distribution of the antisite defects. Band structure calculations suggest that the Mn-Sb site-mixing favors a FM interlayer coupling, consistent with experimental observation, but is detrimental to the band inversion required for a nontrivial topology. Our results suggest a long range magnetic order of Mn ions sitting on Bi sites in MnBi$_2$Te$_4$. The effects of site mixing should be considered in all layered heterostructures that consist of alternating magnetic and topological layers, including the entire family of MnTe(Bi$_2$Te$_3$)$_n$, its Sb analogs and their solid solution., Comment: The effects of Mn/Sb antisite mixing on the magnetic structure (experiment) and band topology (theory) in the van der Waals magnet MnSb$_2$Te$_4$. PRX in press

BAs was predicted to have an unusually high thermal conductivity at room temperature of 2000$\,$Wm$^{-1}$$\,$K$^{-1}$, comparable to that of diamond. However, the experimentally measured thermal conductivity of BAs single crystals is an order of magnitude lower. To identify the origin of this large inconsistency, we investigated the lattice structure and potential defects in BAs single crystals at atomic scale using aberration-corrected scanning transmission electron microscopy (STEM). Rather than finding a large concentration As vacancies ($V_\mathrm{As}$), as widely thought to dominate the thermal resistance in BAs crystals, our STEM results showed enhanced intensity of some B columns and reduced intensity of some As columns, suggesting the presence of antisite defects with As$_\mathrm{B}$ (As-atom on B site) and B$_\mathrm{As}$ (B-atom on As site) with significant concentrations. Further calculations show that the antisite pair with As$_\mathrm{B}$ next to B$_\mathrm{As}$ is preferred energetically among the different types of point defects investigated, and confirm that such defects lower the thermal conductivity for BAs. Using a concentration of 6.6$\pm$3$\times$10$^{20}$$\,$cm$^{-3}$ for the antisite pairs estimated from STEM images, thermal conductivity is estimated to be 65-100$\,$Wm$^{-1}$$\,$K$^{-1}$, in reasonable agreement with our measured value. Our study suggests that As$_\mathrm{B}$-B$_\mathrm{As}$ antisite pairs are the primary lattice defects suppressing thermal conductivity of BAs. Possible approaches are proposed for growth of high quality crystals or films with high thermal conductivity., Comment: 4 pages and 3 figures in main text; 4 pages and 4 figures in the Supplementary Material

The crystal and magnetic structures of single-crystalline hexagonal LuFeO$_3$ films have been studied using x-ray, electron and neutron diffraction methods. The polar structure of these films are found to persist up to 1050 K; and the switchability of the polar behavior is observed at room temperature, indicating ferroelectricity. An antiferromagnetic order was shown to occur below 440 K, followed by a spin reorientation resulting in a weak ferromagnetic order below 130 K. This observation of coexisting multiple ferroic orders demonstrates that hexagonal LuFeO$_3$ films are room-temperature multiferroics.

A growth diagram of Lu-Fe-O compounds on MgO (111) substrates using pulsed laser deposition is constructed based on extensive growth experiments. The LuFe$_2$O$_4$ phase can only be grown in a small range of temperature and O$_2$ pressure conditions. An understanding of the growth mechanism of Lu-Fe-O compound films is offered in terms of the thermochemistry at the surface. Superparamagnetism is observed in LuFe$_2$O$_4$ film and is explained in terms of the effect of the impurity h-LuFeO$_3$ phase and structural defects .

Using a combination of vertical transport measurements across and lateral transport measurements along the LaAlO$_{3}$/SrTiO$_{3}$ heterointerface, we demonstrate that significant potential barrier lowering and band bending are the cause of interfacial metallicity. Barrier lowering and enhanced band bending extends over 2.5 nm into LaAlO$_{3}$ as well as SrTiO$_{3}$. We explain origins of high-temperature carrier saturation, lower carrier concentration, and higher mobility in the sample with the thinnest LaAlO$_{3}$ film on a SrTiO$_{3}$ substrate. Lateral transport results suggest that parasitic interface scattering centers limit the low-temperature lateral electron mobility of the metallic channel., Comment: 10 pages, 3 figures, and 1 table