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Intriguingly conducting perovskite interfaces between ordinary band insulators are widely explored, whereas similar interfaces with Mott insulators are still not quite understood. Here we address the (001), (110), and (111) interfaces between the LaTiO$_{3}$ Mott- and large band gap KTaO$_{3}$ insulators. Based on first-principles calculations, we reveal a mechanism of interfacial conductivity, which is distinct from a formerly studied one applicable to interfaces between polar wide band insulators. Here the key factor causing conductivity is the matching of oxygen octahedra tilting in KTaO$_{3}$ and LaTiO$_{3}$ which, due to a small gap in the LaTiO$_{3}$ results in its sensitivity to the crystal structure, yields metalization of its overlayer and following charge transfer from Ti to Ta. Our findings, also applicable to other Mott insulators interfaces, shed light on the emergence of conductivity observed in LaTiO$_{3}$/KTaO$_{3}$~(110) where the ''polar`` arguments are not applicable and on the emergence of superconductivity in these structures.

Design of epitaxial interfaces is a pivotal way to engineer artificial structures where new electronic phases can emerge. Here we report a systematic emergence of interfacial superconducting state in epitaxial heterostructures of LaTiO3 and KTaO3. The superconductivity transition temperature increases with decreasing the thickness of LaTiO3. Such behavior is observed for both (110) and (111) crystal oriented structures. For thick samples, the finite resistance developing below the superconducting transition temperature increases with increasing LaTiO3 thickness. Consistent with previous reports, the (001) oriented heterointerface features high electron mobility of 250 cm2/Vs and shows no superconducting transition down to 40 mK. Our results imply a non-trivial impact of LaTiO3 on the superconducting state and indicate how superconducting KTaO3 interfaces can be integrated with other oxide materials., Comment: accepted in APL Materials

Strong magneto-electric coupling in two-dimensional helical materials leads to a peculiar type of topologically protected solutions -- skyrmions. Coupling between the net ferroelectric polarization and magnetization allows control of the magnetic texture with an external electric field. In this work we propose the model of optical tweezer -- a particular configuration of an external electric field and Gaussian laser beam that can trap or release the skyrmions in a highly controlled manner. Functionality of such a tweezer is visualized by micromagnetic simulations and model analysis.

Using the Green functions method we study transport properties of surface electrons in topological insulators in the presence of a correlated random exchange field. Such an exchange field may be due to random magnetization with correlated fluctuations. We determine the relaxation time due to scattering from the magnetization fluctuations and from other structural defects. Then we calculate the longitudinal charge conductivity taking into account the contribution due to vertex correction., Comment: 6 pages, 2 figures

We propose a simple analytical model to explain possible appearance of the metallic conductivity in the two-dimensional (2D) LaAlO$_3$/SrTiO$_3$ interface. Our model considers the interface within a macroscopic approach which is usual to semiconductor heterojunctions and is based on drift-diffusion equations. The solution of these equations allows to obtain the positions of band edges as a function of distances from the interface. We show that for the 2D metallic conductivity to appear at the interface, the constituting substances should have the same type (either electronic or hole) of conductivity; in the opposite case the possible transition to metallic phase has a three-dimensional character. The results of our model calculations are in agreement with available experimental data., Comment: 7 pages, 2 figures

The influence of an asymmetric in-plane magnetic anisotropy on the thermally activated spin current is studied theoretically for two different systems; (i) the system consisting of a ferromagnetic insulator in a direct contact with a nonmagnetic metal, and the sandwich structure consisting of a ferromagnetic insulating part sandwiched between two nonmagnetic metals. It is shown that when the difference between the temperatures of the two nonmagnetic metals in a structure is not large, the spin pumping currents from the magnetic part to the nonmagnetic ones are equal in amplitude and have opposite directions, so only the spin torque current contributes to the total spin current. The spin current flows then from the nonmagnetic metal with the higher temperature to the nonmagnetic metal having a lower temperature. Its amplitude varies linearly with the difference in temperatures. In addition, we have found that if the magnetic anisotropy is in the layer plane, then the spin current increases with the magnon temperature, while in the case of an out-of-plane magnetic anisotropy the spin current decreases when the magnon temperature enhances. Enlarging the difference between the temperatures of the nonmagnetic metals, the linear response becomes important, as confirmed by analytical expressions inferred from the Fokker-Planck approach and by the results obtained upon a full numerical integration of the stochastic Landau-Lifshitz-Gilbert equation., Comment: 11 pages, 9 figures

Taking into account the available experimental results, we model the electronic properties and current-voltage characteristics of a ferromagnet-semiconductor junction. The Fe/GaAs interface is considered as a Fe/(i-GaAs)/n+-GaAs/n-GaAs multilayer structure with the Schottky barrier. We also calculate numerically the current-voltage characteristics of a double-Schottky-barrier structure Fe/GaAs/Fe, which are in agreement with available experimental data. For this structure, we have estimated the spin current in the GaAs layer, which characterizes spin injection from the ferromagnet to the semiconductor., Comment: 3 pages, 5 figures, presented on The European Conference Physics of Magnetism 2014 (PM'14), June 23-27, 2014 Pozna\'n, POLAND

We discuss the role of spin-flip scattering of electrons from the magnetized edges in graphene nanoribbons. The spin-flip scattering is associated with strong fluctuations of the magnetic moments at the edge. Using the Boltzmann equation approach, which is valid for not too narrow nanoribbons, we calculate the spin relaxation time in the case of Berry-Mondragon and zigzag graphene edges. We also consider the case of ballistic nanoribbons characterized by very long momentum relaxation time in the bulk, when the main source of momentum and spin relaxation is the spin-dependent scattering at the edges. We found that in the case of zigzag edges, an anomalous spin diffusion is possible, which is related to very weak spin-flip scattering of electrons gliding along the nanoribbon edge., Comment: 9 pages, 7 figures

We demonstrate that shot noise in Fe/MgO/Fe/MgO/Fe double-barrier magnetic tunnel junctions is determined by the relative magnetic configuration of the junction and also by the asymmetry of the barriers. The proposed theoretical model, based on sequential tunneling through the system and including spin relaxation, successfully accounts for the experimental observations for bias voltages below 0.5V, where the influence of quantum well states is negligible. A weak enhancement of conductance and shot noise, observed at some voltages (especially above 0.5V), indicates the formation of quantum well states in the middle magnetic layer. The observed results open up new perspectives for a reliable magnetic control of the most fundamental noise in spintronic structures., Comment: 8 pages, 4 figures

Inspired by the models of A. Rebei and G. J. Parker and A. Rebei et. al., we study a physical model which describes the behaviour of magnetic moments in a ferromagnet. The magnetic moments are associated to 3d electrons which interact with conduction band electrons and with phonons. We study each interaction separately and then collect the results assuming that the electron-phonon interaction can be neglected. For the case of the spin-phonon interaction, we study the derivation of the equations of motion for the classical spin vector and find that the correct behaviour, as given by the Brown equation for the spin vector and the Bloch equation, using the results obtained by D. A. Garanin for the average over fluctuations of the spin vector, can be obtained in the high temperature limit. At finite temperatures we show that the Markovian approximation for the fluctuations is not correct for time scales below some thermal correlation time $\tau_{Th}$. For the case of electrons we workout a perturbative expansion of the Feynman-Vernon functional. We find the expression for the random field correlation function. The composite model (as well as the individual models) is shown to satisfy a fluctuation-dissipation theorem for all temperature regimes if the behaviour of the coupling constants of the phonon-spin interaction remains unchanged with the temperature. The equations of motion are derived.

We consider the effect of periodic scalar and vector potentials generated by periodic deformations of the graphene crystal lattice, on the energy spectrum of electrons. The dependence of electron velocity near the Dirac point on the periodic perturbations of different types is discussed. We also investigated the effect of screening of the scalar potential by calculating the dielectric function as a function of the wave length of the periodic potential. This calculation shows that the periodic scalar field is strongly suppressed by the screening. Using the dependence of electron velocity on the periodic field we also studied the variation of the plasmon spectra in graphene. We found that the spectrum of plasmon excitations can be effectively controlled by the periodic strain field., Comment: 9 pages, 6 figures

We consider stationary spin current in a (110)-oriented GaAs-based symmetric quantum well due to a nonlinear response to an external periodic electric field. The model assumed includes the Dresselhaus spin-orbit interaction and the random Rashba spin-orbit coupling. The Dresselhaus term is uniform in the quantum well plane and gives rise to spin splitting of the electron band. The external electric field of frequency $\omega$ - in the presence of random Rashba coupling -- leads to virtual spin-flip transitions between spin subbands, generating stationary pure spin current proportional to the square of the field amplitude., Comment: 5 pages, 3 figures

We study the energy spectrum and electronic properties of graphene in a periodic magnetic field of zero average with a symmetry of triangular lattice. The periodic field leads to formation of a set of minibands separated by gaps, which can be manipulated by external field. The Berry phase, related to the motion of electrons in $k$ space, and the corresponding Chern numbers characterizing topology of the energy bands are calculated analytically and numerically. In this connection, we discuss the anomalous Hall effect in the insulating state, when the Fermi level is located in the minigap. The results of calculations show that in the model of gapless Dirac spectrum of graphene the anomalous Hall effect can be treated as a sum of fractional quantum numbers, related to the nonequivalent Dirac points., Comment: 6 pages, 5 figures

We consider spin Hall effect in a system of massless Dirac fermions in a graphene lattice. Two types of spin-orbit interaction, pertinent to the graphene lattice, are taken into account - the intrinsic and Rashba terms. Assuming perfect crystal lattice, we calculate the topological contribution to spin Hall conductivity. When both interactions are present, their interplay is shown to lead to some peculiarities in the dependence of spin Hall conductivity on the Fermi level., Comment: 7 pages, 5 figures

We consider a two-dimensional crystalline monolayer of carbon atoms with a single non-magnetic impurity. Using the Weyl Hamiltonian to describe electronic energy spectrum near the Dirac points, we calculate the wave function and energy of impurity states, as well as the induced magnetic moment associated with polarization of the electron system. We present a phase diagram of the localized magnetic state as a function of the chemical potential $\mu $ and coupling constant $g_c$., Comment: 6 pages, 4 figures, in proceedings of the Tenth International School on Theoretical Physics Symmetry and Structural Properties of Condensed Matter, Myczkowce 2009

We present an explanation of recently observed giant magnetic moment and room-temperature ferromagnetism in the dielectric GaN doped with Gd. Our approach uses the polarization mechanism of exchange interaction, which occurs if the d-level of Gd appears in the bandgap close to the valence band edge. Calculated ferromagnetic critical temperature and the value of the magnetic moment well correspond to experimental findings., Comment: 9 pages, 3 figures submitted to Applied Physics Letters

The indirect exchange interaction between magnetic impurities localized in a graphene plane is considered theoretically, with the influence of intrinsic spin-orbit interaction taken into account. Such an interaction gives rise to an energy gap at the Fermi level, which makes the usual RKKY model not applicable. The results show that the effective indirect exchange interaction is described by a range function which decays exponentially with the distance between magnetic moments. The interaction is also shown to depend on whether the two localized moments belong to the same sublattice or are located in two different sublattices., Comment: 5 pages, 1 figure

We present the study of magnetic and transport properties of Pb(1-x-y-z)Mn(x)Sn(y)Eu(z)Te. AC magnetic susceptibility measurements as well as transport characterization were performed. The obtained results indicate that the presence of two types of magnetic ions influences magnetic properties of investigated IV-VI semimagnetic semiconductor. A qualitative analysis and possible mechanisms of the substantial dependence of the Curie temperature on the Eu content are presented. The most likely reason of the observed Curie temperature behaviour is a strong dependence of the location of a heavy mass Sigma band upon the alloy composition. The theoretical calculations in frame of simple models confirm this point., Comment: 14 pages, 6 figures

We show that in a magnetic nanowire with double magnetic domain walls, quantum interference results in spin-split quasistationary states localized mainly between the domain walls. Spin-flip-assisted transmission through the domain structure increases strongly when these size-quantized states are tuned on resonance with the Fermi energy, e.g. upon varying the distance between the domain walls which results in resonance-type peaks of the wire conductance. This novel phenomena is shown to be utilizable to manipulate the spin density in the domain vicinity. The domain walls parameters are readily controllable and the predicted effect is hence exploitable in spintronic devices., Comment: 4 pages with 4 figures

Non-damped oscillations of the magnetization vector of a ferromagnetic system subject to a spin polarized current and an external magnetic field are studied theoretically by solving the Landau-Lifshitz-Gilbert equation. It is shown that the frequency and amplitude of such oscillations can be controlled by means of an applied magnetic field and a spin current. The possibility of injection of the oscillating spin current into a non-magnetic system is also discussed., Comment: 4 pages, 4 figures

The dynamics of current-induced motion of a magnetic domain wall in a quasi-one-dimensional ferromagnet with both easy-axis and easy-plane anisotropy, is studied. We pay a special attention to the case of a sharp domain wall, and calculate the spin torque created by the electric current. The torque has two components, one of which is acting as a driving force for the motion of the domain wall while the other distorts its shape, forcing thus the magnetic moments to deviate from the easy plane., Comment: 12 pages with 6 figures

The Landau-Lifshitz equation for the magnetization dynamics of a single-domain magnetic system is solved using the methods of self-organization. The description takes into account the torque due to spin transfer. The potential energy of the system includes the uniaxial and easy-plane anisotropies, and the Zeeman energy due to an external magnetic field. The equilibrium and stationary states are investigated as a function of the spin current and external magnetic field. The presented bifurcation diagram allows to determine the margins of a neutral stability mode of the equilibrium and stationary states for different values of the easy-plane anisotropy constant. Using the power spectral density method, the trajectory tracing, Hausdorff dimension, and maximum Lyapunov exponent, the dynamics of the phase states in an external magnetic field is demonstrated. The analytical transcendent equations for switching between different equilibrium states are also obtained, proving the importance of phase averaging., Comment: 15 pages with 15 figures

We study the energy spectrum of magnons in a ferromagnet with topologically nontrivial magnetization profile. In the case of inhomogeneous magnetization corresponding to a metastable state of ferromagnet, the spin-wave equation of motion acquires a gauge potential leading to a Berry phase for the magnons propagating along a closed contour. The effect of magnetic anisotropy is crucial for the Berry phase: we show that the anisotropy suppresses its magnitude, which makes the Berry phase observable in some cases, similar to the Aharonov-Bohm effect for electrons. For example, it can be observed in the interference of spin waves propagating in mesoscopic rings. We discuss the effect of domain walls on the interference in ferromagnetic rings, and propose some experiments with a certain geometry of magnetization. We also show that the nonvanishing average topological field acts on the magnons like a uniform magnetic field on electrons. It leads to the quantization of the magnon spectrum in the topological field., Comment: 8 pages, 5 figures

We discuss the mechanism of anomalous Hall effect related to the contribution of electron states below the Fermi surface (induced by the Berry phase in momentum space). Our main calculations are made within a model of two-dimensional electron gas with spin-orbit interaction of the Rashba type, taking into account the scattering from impurities. We demonstrate that such an "intrinsic" mechanism can dominate but there is a competition with the impurity-scattering mechanism, related to the contribution of states in the vicinity of Fermi surface. We also show that the contribution to the Hall conductivity from electron states close to the Fermi surface has the intrinsic properties as well., Comment: 9 pages, 6 figures

We investigate theoretically the influence of the spin-orbit interaction of Rashba type on the magnetoresistance of a semiconducting ferromagnetic nanostructure with a laterally constrained domain wall. The domain wall is assumed sharp (on the scale of the Fermi wave length of the charge carriers). It is shown that the magnetoresistance in such a case can be considerably large, which is in a qualitative agreement with recent experimental observations. It is also shown that spin-orbit interaction may result in an increase of the magnetoresistance. The role of localization corrections is also briefly discussed., Comment: 5 pages, 2 figures

We discuss the anomalous Hall effect in a two-dimensional electron gas subject to a spatially varying magnetization. This topological Hall effect (THE) does not require any spin-orbit coupling, and arises solely from Berry phase acquired by an electron moving in a smoothly varying magnetization. We propose an experiment with a structure containing 2D electrons or holes of diluted magnetic semiconductor subject to the stray field of a lattice of magnetic nanocylinders. The striking behavior predicted for such a system (of which all relevant parameters are well known) allows to observe unambiguously the THE and to distinguish it from other mechanisms., Comment: 5 pages with 4 figures

Electronic transport through thin and laterally constrained domain walls in ferromagnetic nanojunctions is analyzed theoretically. The description is formulated in the basis of scattering states. The resistance of the domain wall is calculated in the regime of strong electron reflection from the wall. It is shown that the corresponding magnetoresistance can be large, which is in a qualitative agreement with recent experimental observations. We also calculate the spin current flowing through the wall and the spin polarization of electron gas due to reflections from the domain wall., Comment: 7 pages, 4 figures

For antiferromagnetically coupled Fe/Cr multilayers the low field contribution to the resistivity, which is caused by the domain walls, is strongly enhanced at low temperatures. The low temperature resistivity varies according to a power law with the exponent about 0.7 to 1. This behavior can not be explained assuming ballistic electron transport through the domain walls. It is necessary to invoke the suppression of anti-localization effects (positive quantum correction to conductivity) by the nonuniform gauge fields caused by the domain walls., Comment: 5 pages with 3 figures

We propose a new mechanism of indirect exchange interaction, which can be responsible for the ferromagnetic ordering in Mn-doped semiconductors (like GaMnAs) at low carrier concentration. The mechanism is based on the interplay of the hybridization of band states (conduction or valence) with localized impurity (donor or acceptor) states and the direct exchange interaction between localized spins and the band states. The indirect exchange coupling between two impurities occurs when the wavefunctions of the corresponding localized donor (acceptor) states overlap. This coupling is independent of the free carrier concentration and therefore may be responsible for ferromagnetic transition at low or vanishing carrier concentration., Comment: 4 pages, 2 figures

We present theoretical description of conduction electrons interacting with a domain wall in ferromagnetic metals. The description takes into account interaction between electrons. Within the semiclassical approximation we calculate the spin and charge distributions, particularly their modification by the domain wall. In the same approximation we calculate local transport characteristics, including relaxation times and charge and spin conductivities. It is shown that these parameters are significantly modified near the wall and this modification depends on electron-electron interaction., Comment: 10 pages with 4 figures

The paper reports on the investigations of the weak localization (WL) effects in 3D polycrystalline thin films of InSb. The films are closely compensated showing the electron concentration n>10^{16} cm^{-3} at the total concentration of the donor and acceptor type structural defects >10^{18} cm^{-3}. Unless Pb-doped, the InSb films do not show any measurable or show very small WL effect at 4.2 K. The Pb-doping to the concentration of the order of 10^{18} cm^{-3} leads to pronounced WL effects below 7 K. In particular, a clearly manifested SO scattering is observed. From the comparison of the experimental data on temperature dependence of the magnetoresistivity and sample resistance with the WL theory, the temperature dependence of the phase destroying time is determined. The determination is performed by fitting theoretical terms obtained from Kawabata's theory to experimental data on magnetoresistance. It is concluded that the dephasing process is connected to three separate interaction processes. The first is due to the SO scatterings and is characterized by temperature-independent relaxation time. The second is associated with the electron-phonon interaction. The third dephasing process is characterized by independent on temperature relaxation time tau_c. This relaxation time is tentatively ascribed to inelastic scattering at extended structural defects, like grain boundaries. The resulting time dephasing time shows saturation in its temperature dependence. The temperature dependence of the resistance of the InSb films can be explained by the electron-electron interaction for T<1 K, and by the WL effect for T>2 K., Comment: 15 pages with 5 figures

We calculate the localization corrections to the anomalous Hall conductivity related to the contribution of spin-orbit scattering into the current vertex (side-jump mechanism). We show that in contrast to the ordinary Hall effect, there exists a nonvanishing localization correction to the anomalous Hall resistivity. The correction to the anomalous Hall conductivity vanishes in the case of side-jump mechanism, but is nonzero for the skew scattering. The total correction to the nondiagonal conductivity related to both mechanisms, does not compensate the correction to the diagonal conductivity., Comment: 7 pages with 7 figures

The origin of ferromagnetism in semimagnetic III-V materials is discussed. The indirect exchange interaction caused by virtual electron excitations from magnetic impurity level in the bandgap to the valence band can explain ferromagnetism in GaAs(Mn) no matter samples are degenerated or not. Formation of ferromagnetic clusters and percolation picture of phase transition describes well all available experimental data and allows to predict the Mn-composition dependence of transition temperature in wurtzite (Ga,In,Al)N epitaxial layers., Comment: 4 pages with 3 figures

Weak localization corrections to conductivity of ferromagnetic systems are studied theoretically in the case when spin-orbit interaction plays a significant role. Two cases are analyzed in detail: (i) the case when the spin-orbit interaction is due to scattering from impurities, and (ii) the case when the spin-orbit interaction results from reduced dimensionality of the system and is of the Bychkov-Rashba type. Results of the analysis show that the localization corrections to conductivity of ferromagnetic metals lead to a negative magnetoresistance -- also in the presence of the spin-orbit scattering. Positive magnetoresistance due to weak antilocalization, typical of nonmagnetic systems, does not occur in ferromagnetic systems. In the case of two-dimensional ferromagnets, the quantum corrections depend on the magnetization orientation with respect to the plane of the system., Comment: 14 pages with 10 figures, corrected and extended version, Sec.7 added