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The Heusler compounds have provided a playground of material candidates for various technological applications based on their highly diverse and tunable properties, controlled by chemical composition and crystal structure. However, physical exploration of the Heusler chemical space en masse is impossible in practice, hindering the exploration of the chemical composition vs. proprieties relationship. Many of these applications are related to the Heuslers electron transport characteristics, which are embedded in their electronic band structure (EBS). Here we we created a Heuslers dataset using the Materials Project (MP) database -- retrieving both chemical composition and their EBSs. We then used machine learning to develop a model correlating the composition vs. number of Dirac points in the EBS for Heuslers and also other Cubic compounds by identifying said Dirac points using an automated algorithm as well as generating chemical composition and global crystal structure features. Our ML model captures the overall trend, as well as identifies significant electronic and global crystal structure features, however, the ML model suffered from significant variance due to the lack of site specific features. Future work on a methodology for handling atomic site specific features will allow ML models to better match the underlying quantum mechanics governing the properties (also based on site specific properties) and capture the electronic properties in a more generalized approach., Comment: 13 Pages, 19 pages with references, 8 Figures

As spintronic devices become more and more prevalent, the desire to find Pt free materials with large spin Hall effects is increasing. Previously it was shown that Beta W, the metastable A15 structured variant of pure W, has charge-spin conversion efficiencies on par with Pt, and it was predicted that Beta W(Ta) alloys should be even more efficient. Here we demonstrate the enhancement of the spin Hall ratio (SHR) in A15-phase Beta W films doped with Ta (W(4-x)Tax where x is between 0.28 and 0.4, deposited at room temperature using DC magnetron co-sputtering. In close agreement with theoretical predictions, we find that the SHR of the doped films was approx. 9 percent larger than pure Beta W films. We also found that the SHRs in devices with Co2Fe6B2 were nearly twice as large as the SHRs in devices with Co4Fe4B2. This work shows that by optimizing deposition parameters and substrates, the fabrication of the optimum W3Ta alloy should be feasible, opening the door to commercially viable, Pt free, spintronic devices., Comment: 7 Pages, 3 Figures, 1 Table