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Inspired by recent theoretical proposal on the interesting piezomagnetism and C-paired valley polarization in V2Se2O monolayer, we predict a stable antiferromagnetic Janus monolayer V2SeTeO with altermagnetic configuration using density functional theory calculations. It exhibits a novel multi-piezo effect combining piezoelectric, piezovalley and piezomagnetism. Most interestingly, the valley polarization and the net magnetization under strain in V2SeTeO exceed these in V2Se2O, along with the additional large piezoelectric coefficient of e31 (0.322*10-10 C m-1). The multi-piezo effect makes antiferromagnetic Janus monolayer V2SeTeO a tantalizing material for potential applications in nanoelectronics, optoelectronics, spintronics and valleytronics., Comment: 20 pages,9 figures

Two-dimensional (2D) hybrid organic-inorganic perovskites (HOIPs) are introducing new directions in the 2D materials landscape. The coexistence of ferroelectricity and spin-orbit interactions play a key role in their optoelectronic properties. We perform a detailed study on a recently synthesized ferroelectric 2D-HOIP, (AMP)PbI$_4$ (AMP = 4-aminomethyl-piperidinium). The calculated polarization and Rashba parameter are in excellent agreement with experimental values. We report a striking new effect, i.e., an extraordinarily large Rashba anisotropy that is tunable by ferroelectric polarization: as polarization is reversed, not only the spin texture chirality is inverted, but also the major and minor axes of the Rashba anisotropy ellipse in k-space are interchanged - a pseudo rotation. A $k \cdot p$ model Hamiltonian and symmetry-mode analysis reveal a quadrilinear coupling between the cation-rotation modes responsible for the Rashba ellipse pseudo-rotation, the framework rotation, and the polarization. These findings may provide new avenues for spin-optoelectronic devices such as spin valves or spin FETs., Comment: 19 pages, 5 figures

Topological Dirac semimetals are a class of semimetals that host symmetry-protected Dirac points near the Fermi level, which arise due to a band inversion of the conduction and valence bands. In this work, we study the less explored class of \emph{noncentrosymmetric} topological Dirac semimetals in three dimensions. We identify the noncentrosymmetric crystallographic point groups required to stabilize fourfold degenerate band crossings and derive model Hamiltonians for all distinct types of band inversions allowed by symmetry. Using these model Hamiltonians, which emphasize the physical nature of the allowed couplings, we establish the generic electronic phase diagram noncentrosymmetric Dirac semimetals and show that it generically includes phases with coexistent Weyl point nodes or Weyl line nodes. In particular, for one specific type of band inversion in sixfold symmetric systems we show that Weyl line nodes are always present. Based on first-principles calculations, we predict that BiPd$_2$O$_4$ is a noncentrosymmetric Dirac semimetal under 20 Gpa pressure and hosts topological type-II Dirac points on the fourfold rotation axis. Furthermore, we propose that the hexagonal polar alloy LiZnSb$_{x}$Bi$_{1-x}$ realizes a Dirac semimetal with coexistent Weyl points. Interestingly, the emergence and location of the Weyl points is highly tunable and can be controlled by the alloy concentration $x$. More generally, our results not only establish band-inverted noncentrosymmetric systems as a broad and versatile class of topological semimetals, but also provide a framework for studying the quantum nonlinear Hall effect and nonlinear optical properties in the Dirac semimetals., Comment: 17 pages, 10 figures

Carbon allotropes have a large family of materials with varieties of crystal structures and properties and can realize different topological phases. Using first principles calculations, we predict a new two-dimensional (2D) carbon allotrope, namely penta-octa-graphene, which consists of pentagonal and octagonal carbon rings. We find that penta-octa-graphene can host both type-I and type-II Dirac line nodes (DLNs). The band inversion between conduction and valence bands forms the type-I DLNs and the two highest valence bands form the type-II DLNs. We find that the type-I DLNs are robust to the biaxial strain and the type-II DLNs can be driven to type-I when applying over 3 $\%$ biaxial stretching strain. A lattice model based on the $\pi$ orbitals of carbons is derived to understand the coexistence mechanism of type-I and type-II DLNs in penta-octa-graphene. Possible realizations and characterizations of this penta-octa-graphene in the experiment are also discussed. Our findings shed new light on the study of the coexistence of multiple topological states in the 2D carbon allotropes., Comment: 8 pages, 4 figures, accepted for publication in Carbon(https://doi.org/10.1016/j.carbon.2019.11.083)

Despite the growing interest in topological materials, the difficulty of experimentally synthesizing and integrating them with other materials has been one of the main barriers restricting access to their unique properties. Recent advances in synthesizing metastable phases of crystalline materials can help to overcome this barrier and offer new platforms to experimentally study and manipulate band topology. Because III-V semiconductors have a wide range of functional material applications (including optoelectronic devices, light-emitting diodes, and highly efficient solar cells), and because Bi-doped III-V materials can be synthesized by ion plantation and ion-cutoff methods, we revisit the effect of bismuth substitution in metastable III-V semiconductors. Through first-principles calculation methods, we show that in wurtzite structure III-V materials, Bi substitution can lead to band inversion phenomena and induce nontrivial topological properties. Specifically, we identify that GaBi and InBi are Dirac-Weyl semimetals, characterized by the coexistence of Dirac points and Weyl points, and $\text{GaAs}_{0.5} \text{Bi}_{0.5}$, $\text{GaSb}_{0.5} \text{Bi}_{0.5}$, $\text{InSb}_{0.5} \text{Bi}_{0.5}$ are triple-point semimetals, characterized by two sets of "near Dirac" triple points on the Fermi level. These experimentally-accessible bismuth-based topological semimetals can be integrated into the large family of functional III-V materials for experimental studies of heterostructures and future optoelectronic applications., Comment: 8 pages, 9 figures

We review recent theoretical progress in the understanding and prediction of novel topological semimetals. Topological semimetals define a class of gapless electronic phases exhibiting topologically stable crossings of energy bands. Different types of topological semimetals can be distinguished based on the degeneracy of the band crossings, their codimension (e.g., point or line nodes), as well as the crystal space group symmetries on which the protection of stable band crossings relies. The dispersion near the band crossing is a further discriminating characteristic. These properties give rise to a wide range of distinct semimetal phases such as Dirac or Weyl semimetals, point or line node semimetals, and type-I or type-II semimetals. In this review we give a general description of various families of topological semimetals with an emphasis on proposed material realizations from first-principles calculations. The conceptual framework for studying topological gapless electronic phases is reviewed, with a particular focus on the symmetry requirements of energy band crossings, and the relation between the different families of topological semimetals is elucidated. In addition to the paradigmatic Dirac and Weyl semimetals, we pay particular attention to more recent examples of topological semimetals, which include nodal line semimetals, multifold fermion semimetals, triple-point semimetals. Less emphasis is placed on their surface state properties, responses to external probes, and recent experimental developments., Comment: 29 pages, 11 figures; (short) review article for Annual Reviews of Materials Research; comments are most welcome

Topological nodal line semimetals, hosting one-dimensional Fermi lines with symmetry protection, has become a hot topic in topological quantum matter. Due to the breaking of time reversal symmetry in magnetic system, nodal lines require protection by additional symmetries. Here, we report the discovery of antiferromagnetic type-I and type-II nodal lines coexist in the monolayer CrAs$_{2}$ based on a systematic first-principles calculation. Remarkably, the type-I nodal line in CrAs$_{2}$ form a concentric loop centered around the $\Gamma$ point is filling-enforced by nonsymmorphic analogue symmetry and robust against spin-orbital coupling. The type-II nodal lines, a kind of open nodal lines appear around the Fermi level, are protected by the mirror symmetry in the absence of spin-orbital coupling. The antiferromagnetic monolayer CrAs$_{2}$ proposed here may provide a platform for the correlation between magnetism and exotic topological phases., Comment: 15 pages, 5 figures

We propose that the noncentrosymmetric LiGaGe-type hexagonal $ABC$ crystal SrHgPb realizes a new type of topological semimetal that hosts both Dirac and Weyl points in momentum space. The symmetry-protected Dirac points arise due to a band inversion and are located on the sixfold rotation $z$-axis, whereas the six pairs of Weyl points related by sixfold symmetry are located on the perpendicular $k_z=0$ plane. By studying the electronic structure as a function of the buckling of the HgPb layer, which is the origin of inversion symmetry breaking, we establish that the coexistence of Dirac and Weyl fermions defines a phase separating two topologically distinct Dirac semimetals. These two Dirac semimetals are distinguished by the $\mathbb{Z}_2$ index of the $k_z=0$ plane and the corresponding presence or absence of 2D Dirac fermions on side surfaces. We formalize our first-principles calculations by deriving and studying a low-energy model Hamiltonian describing the Dirac-Weyl semimetal phase. We conclude by proposing several other materials in the non-centrosymmetric $ABC $ material class, in particular SrHgSn and CaHgSn, as candidates for realizing the Dirac-Weyl semimetal., Comment: 6 pages, 4 figures + 5 pages of supplemental material

Weyl semimetals are gapless topological states of matter with broken inversion and/or time reversal symmetry, which can support unconventional responses to externally applied electrical, optical and magnetic fields. Here we report a new photogalvanic effect in type-II WSMs, MoTe2 and Mo0.9W0.1Te2, which are observed to support a circulating photocurrent when illuminated by circularly polarized light at normal incidence. This effect occurs exclusively in the inversion broken phase, where crucially we find that it is associated with a spatially varying beam profile via a new dispersive contribution to the circular photogalvanic effect (s-CPGE). The response functions derived for s-CPGE reveal the microscopic mechanism of this photocurrent, which are controlled by terms that are allowed in the absence of inversion symmetry, along with asymmetric carrier excitation and relaxation. By evaluating this response for a minimal model of a Weyl semimetal, we obtain the frequency dependent scaling behavior of this form of photocurrent. These results demonstrate opportunities for controlling photoresponse by patterning optical fields to store, manipulate and transmit information over a wide spectral range.

GeTe wins the renewed research interest due to its giant bulk Rashba spin orbit coupling (SOC), and becomes the father of a new multifunctional material, i.e., ferroelectric Rashba semiconductor. In the present work, we investigate Rashba SOC at the interface of the ferroelectric semiconductor superlattice GeTe(111)/InP(111) by using the first principles calculation. Contribution of the interface electric field and the ferroelectric field to Rashba SOC is revealed. A large modulation to Rashba SOC and a reversal of the spin polarization is obtained by switching the ferroelectric polarization. Our investigation about GeTe(111)/InP(111) superlattice is of great importance in the application of ferroelectric Rashba semiconductor in the spin field effect transistor.

Atomically thin black phosphorus (BP) is a promising two-dimensional material for fabricating electronic and optoelectronic nano-devices with high mobility and tunable bandgap structures. However, the charge-carrier mobility in few-layer phosphorene (monolayer BP) is mainly limited by the presence of impurity and disorders. In this study, we demonstrate that vertical BP heterostructure devices offer great advantages in probing the electron states of monolayer and few-layer phosphorene at temperatures down to 2 K through capacitance spectroscopy. Electronic states in the conduction and valence bands of phosphorene are accessible over a wide range of temperature and frequency. Exponential band tails have been determined to be related to disorders. Unusual phenomena such as the large temperature-dependence of the electron state population in few-layer phosphorene have been observed and systematically studied. By combining the first-principles calculation, we identified that the thermal excitation of charge trap states and oxidation-induced defect states were the main reasons for this large temperature dependence of the electron state population and degradation of the on-off ratio in phosphorene field-effect transistors., Comment: 15 pages, 7 figures, 2D Materials, Volume 3, Number 1(2016)