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Enabling on-demand control of heat flow is key for the development of next-generation electronic devices, solid-state heat pumps, and thermal logic. However, precise and agile tuning of the relevant microscopic material parameters for adjusting thermal conductivities remains elusive. Here, we study several single crystals of lanthanum aluminate (LaAlO$_{3}$) with different domain structures and show that ferroelastic domain walls behave as boundaries that act like efficient controllers to govern thermal conductivity. At low temperature (3 K), we demonstrate a fivefold reduction in thermal conductivity induced by domain walls orthogonal to the heat flow and a twofold reduction when they are parallel to the heat flow. Atomistic calculations fully support this experimental observation. By breaking down phonon scattering mechanisms, we also analyze the temperature dependence of the thermal conductivity to derive a quantitative relation between thermal conductivity variations and domain wall organization and density.

Zirconia and hafnia based thin films have attracted tremendous attention in the last decade due to their unexpected ferroelectric behavior at the nanoscale, which facilitates the downscaling of ferroelectric devices. The present work reports a novel ferroelectric rhombohedral phase of ZrO2 that can be achieved in thin films grown on (111)- Nb:SrTiO3 substrates by ion-beam sputtering. Structural and ferroelectric characterizations reveal that the (111)-oriented ZrO2 films are under epitaxial compressive strain and display a switchable ferroelectric polarization of about 20.2 {\mu}C/cm2 with a coercive field of 1.5 MV/cm. Moreover, the time dependent polarization reversal characteristics of Nb:STO/ZrO2/Au film capacitors exhibit bell-shape curves, a typical feature of ferroelectric films associated with domains reversal. The estimated activation field is comparable to the coercive field obtained from polarization-electric field hysteresis loops. Interestingly, the studied films show ferroelectric behavior per se, i.e., there is no need to apply the wake-up cycle that is essential to induce ferroelectricity in the conventional (orthorhombic) ferroelectric phase of ZrO2. Therefore, the present films have a technologically advantage over the previously studied ferroelectric ZrO2 films, and may be attractive for nanoscale ferroelectric devices., Comment: 26 pages, 9 figures

Atomistic effective Hamiltonian simulations are used to investigate electrocaloric (EC) effects in the lead-free Ba(Zr$_{0.5}$Ti$_{0.5}$)O$_{3}$ (BZT) relaxor ferroelectric. We find that the EC coefficient varies non-monotonically with the field at any temperature, presenting a maximum that can be traced back to the behavior of BZT's polar nanoregions. We also introduce a simple Landau-based model that reproduces the EC behavior of BZT as a function of field and temperature, and which is directly applicable to other compounds. Finally, we confirm that, for low temperatures (i.e., in non-ergodic conditions), the usual indirect approach to measure the EC response provides an estimate that differs quantitatively from a direct evaluation of the field-induced temperature change., Comment: 9 pages, 4 figures

Strain effects on epitaxial thin films of LaNiO3 grown on different single crystalline substrates are studied by Raman scattering and first-principles simulation. New Raman modes, not present in bulk or fully-relaxed films, appear under both compressive and tensile strains, indicating symmetry reductions. Interestingly, the Raman spectra and the underlying crystal symmetry for tensile and compressively strained films are different. Extensive mapping of LaNiO3 phase stability is addressed by simulations, showing that a variety of crystalline phases are indeed stabilized under strain which may impact the electronic orbital hierarchy. The calculated Raman frequencies reproduce the principal features of the experimental spectra, supporting the validity of the multiple strain-driven structural transitions predicted by the simulations., Comment: 18 pages, 7 figures

In multiferroic BiFeO3 thin films grown on highly mismatched LaAlO3 substrates, we reveal the coexistence of two differently distorted polymorphs that leads to striking features in the temperature dependence of the structural and multiferroic properties. Notably, the highly distorted phase quasi-concomitantly presents an abrupt structural change, transforms from a hard to a soft ferroelectric and transitions from antiferromagnetic to paramagnetic at 360+/-20 K. These coupled ferroic transitions just above room temperature hold promises of giant piezoelectric, magnetoelectric and piezomagnetic responses, with potential in many applications fields.

Recently we have predicted [Phys. Rev. Lett. May 2005(cond-mat/0504694)] that Ti-decorated carbon nanotubes can absorb up to 8-wt% hydrogen at ambient conditions. Here we show that similar phenomena occurs in light transition-metal decorated C60. While Sc and Ti prefers the hexagon (H) sites with a binding energy of 2.1 eV, V and Cr prefers double-bond (D) sites with binding energies of 1.3 and 0.8 eV, respectively. Heavier metals such as Mn, Fe, and Co do not bond on C60. Once the metals are absorbed on C60, each can bind up to four hydrogen molecules with an average binding energy of 0.3-0.5 eV/H2. At high metal-coverage, we show that a C$_{60}$ can accommodate six D-site and eight H-site metals, which can reversible absorb up to 56 H2 molecules, corresponding to 7.5 wt%., Comment: 4+ pages, 5 figues, see http://www.ncnr.nist.gov/staff/taner/h2 Phys. Rev. B (submitted, 2005)