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We recast the Howie-Whelan equations for generating simulated transmission electron microscope (TEM) images, replacing the dependence on local atomic displacements with atomic positions only. This allows very rapid computation of simulated TEM images for arbitrarily complex atomistic configurations of lattice defects and dislocations in the dynamical two beam approximation. Large scale massively-overlapping cascade simulations performed with molecular dynamics, are used to generate representative high-dose nanoscale irradiation damage in tungsten at room temperature, and we compare the simulated TEM images to experimental TEM images with similar irradiation and imaging conditions. The simulated TEM shows 'white-dot' damage in weak-beam dark-field imaging conditions, in line with our experimental observations and as expected from previous studies, and in bright-field conditions a dislocation network is observed. In this work we can also compare the images to the nanoscale lattice defects in the original atomic structures, and find that at high dose the white spots are not only created by small dislocation loops, but rather arise from nanoscale fluctuations in strains around curved sections of dislocation lines.

The effect of silica-promotion on the reduction of iron oxides in hydrogen was investigated using in situ X-ray diffraction and aberration-corrected transmission electron microscopy to understand the mechanism of reduction and the identity of the iron(II) silicate phase that has historically been designated as the cause of the iron-silica interaction in such materials. In the absence of a silica promoter the reduction of hematite to {\alpha}-Fe proceeds via magnetite. Silica promoted amorphous iron oxide is reduced to {\alpha}-Fe via stable magnetite and w\"ustite phases. During reduction of silica-promoted iron oxide, Fe0 diffuses out of the amorphous silica-promoted iron oxide matrix upon reduction from Fe2+ and coexists with an amorphous Fe-O-Si matrix. Certain portions of w\"ustite remain difficult to reduce to {\alpha}-Fe owing to the formation of a protective silica-containing layer covering the remaining iron oxide regions. Given sufficient energy, this amorphous Fe-O-Si material forms ordered, crystalline fayalite., Comment: 8 figures

The surface free energy is one of the most fundamental properties of solids, hence, manipulating the surface energy and thereby the wetting properties of solids, has tremendous potential for various physical, chemical, biological as well as industrial processes. Typically, this is achieved by either chemical modification or by controlling the hierarchical structures of surfaces. Here we report a phenomenon whereby the wetting properties of vermiculite laminates are controlled by the hydrated cations on the surface and in the interlamellar space. We find that by exploiting this mechanism, vermiculite laminates can be tuned from superhydrophillic to hydrophobic simply by exchanging the cations; hydrophilicity decreases with increasing cation hydration free energy, except for lithium. Lithium, which has a higher hydration free energy than potassium, is found to provide a superhydrophilic surface due to its anomalous hydrated structure at the vermiculite surface. Building on these findings, we demonstrate the potential application of superhydrophilic lithium exchanged vermiculite as a thin coating layer on microfiltration membranes to resist fouling, and thus, we address a major challenge for oil-water separation technology.

Graphene oxide membranes show exceptional molecular permeation properties, with a promise for many applications. However, their use in ion sieving and desalination technologies is limited by a permeation cutoff of ~9 Angstrom, which is larger than hydrated ion diameters for common salts. The cutoff is determined by the interlayer spacing d ~13.5 Angstrom, typical for graphene oxide laminates that swell in water. Achieving smaller d for the laminates immersed in water has proved to be a challenge.Here we describe how to control d by physical confinement and achieve accurate and tuneable ion sieving. Membranes with d from ~ 9.8 Angstrom to 6.4 Angstrom are demonstrated, providing the sieve size smaller than typical ions' hydrated diameters.In this regime, ion permeation is found to be thermally activated with energy barriers of ~10-100 kJ/mol depending on d. Importantly, permeation rates decrease exponentially with decreasing the sieve size but water transport is weakly affected (by a factor of <2). The latter is attributed to a low barrier for water molecules entry and large slip lengths inside graphene capillaries. Building on these findings, we demonstrate a simple scalable method to obtain graphene-based membranes with limited swelling, which exhibit 97% rejection for NaCl.

Van der Waals assembly of two-dimensional (2D) crystals continue attract intense interest due to the prospect of designing novel materials with on-demand properties. One of the unique features of this technology is the possibility of trapping molecules or compounds between 2D crystals. The trapped molecules are predicted to experience pressures as high as 1 GPa. Here we report measurements of this interfacial pressure by capturing pressure-sensitive molecules and studying their structural and conformational changes. Pressures of 1.2 +/- 0.3 GPa are found using Raman spectrometry for molecular layers of one nanometer in thickness. We further show that this pressure can induce chemical reactions and several trapped salts or compounds are found to react with water at room temperature, leading to 2D crystals of the corresponding oxides. This pressure and its effect should be taken into account in studies of van der Waals heterostructures and can also be exploited to modify materials confined at the atomic interfaces.

In this letter, we first show electrical spin injection in the germanium conduction band at room temperature and modulate the spin signal by applying a gate voltage to the channel. The corresponding signal modulation agrees well with the predictions of spin diffusion models. Then by setting a temperature gradient between germanium and the ferromagnet, we create a thermal spin accumulation in germanium without any tunnel charge current. We show that temperature gradients yield larger spin accumulations than pure electrical spin injection but, due to competing microscopic effects, the thermal spin accumulation in germanium remains surprisingly almost unchanged under the application of a gate voltage to the channel., Comment: 7 pages, 3 figures

Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in spin injection mechanism from a magnetic tunnel junction into a semiconductor is still under debate. In this letter, we demonstrate a clear transition from spin accumulation into interface states to spin injection in the conduction band of $n$-Ge. We observe spin signal amplification at low temperature due to spin accumulation into interface states followed by a clear transition towards spin injection in the conduction band from 200 K up to room temperature. In this regime, the spin signal is reduced down to a value compatible with spin diffusion model. More interestingly, we demonstrate in this regime a significant modulation of the spin signal by spin pumping generated by ferromagnetic resonance and also by applying a back-gate voltage which are clear manifestations of spin current and accumulation in the germanium conduction band., Comment: 5 pages, 4 figures