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Nitrogen impurities help to stabilize the negatively-charged-state of NV$^-$ in diamond, whereas magnetic fluctuations from nitrogen spins lead to decoherence of NV$^-$ qubits. It is not known what donor concentration optimizes these conflicting requirements. Here we used 10-MeV $^{15}$N$^{3+}$ ion implantation to create NV$^-$ in ultrapure diamond. Optically detected magnetic resonance of single centers revealed a high creation yield of $40\pm3$% from $^{15}$N$^{3+}$ ions and an additional yield of $56\pm3$% from $^{14}$N impurities. High-temperature anneal was used to reduce residual defects, and charge stable NV$^-$, even in a dilute $^{14}$N impurity concentration of 0.06 ppb were created with long coherence times.

Spins of negatively charged nitrogen-vacancy (NV$^-$) defects in diamond are among the most promising candidates for solid-state qubits. The fabrication of quantum devices containing these spin-carrying defects requires position-controlled introduction of NV$^-$ defects having excellent properties such as spectral stability, long spin coherence time, and stable negative charge state. Nitrogen ion implantation and annealing enable the positioning of NV$^-$ spin qubits with high precision, but to date, the coherence times of qubits produced this way are short, presumably because of the presence of residual radiation damage. In the present work, we demonstrate that a high temperature annealing at 1000$^\circ$C allows 2 millisecond coherence times to be achieved at room temperature. These results were obtained for implantation-produced NV$^-$ defects in a high-purity, 99.99% $^{12}$C enriched single crystal chemical vapor deposited diamond. We discuss these remarkably long coherence times in the context of the thermal behavior of residual defect spins. [Published in Physical Review B {\bf{88}}, 075206 (2013)]

The ground state spin of the negatively charged nitrogen-vacancy center in diamond has many exciting applications in quantum metrology and solid state quantum information processing, including magnetometry, electrometry, quantum memory and quantum optical networks. Each of these applications involve the interaction of the spin with some configuration of electric, magnetic and strain fields, however, to date there does not exist a detailed model of the spin's interactions with such fields, nor an understanding of how the fields influence the time-evolution of the spin and its relaxation and inhomogeneous dephasing. In this work, a general solution is obtained for the spin in any given electric-magnetic-strain field configuration for the first time, and the influence of the fields on the evolution of the spin is examined. Thus, this work provides the essential theoretical tools for the precise control and modeling of this remarkable spin in its current and future applications., Comment: 14 pages, 8 figures

We investigate the effect of surface termination on the charge state of nitrogen vacancy centers, which have been ion-implanted few nanometers below the surface of diamond. We find that, when changing the surface termination from oxygen to hydrogen, previously stable NV- centers convert into NV0 and, subsequently, into an unknown non-fluorescent state. This effect is found to depend strongly on the implantation dose. Simulations of the electronic band structure confirm the dissappearance of NV- in the vicinity of the hydrogen-terminated surface. The band bending, which induces a p-type surface conductive layer leads to a depletion of electrons in the nitrogen vacancies close to the surface. Therefore, hydrogen surface termination provides a chemical way for the control of the charge state of nitrogen-vacancy centers in diamond. Furthermore, it opens the way to an electrostatic control of the charge state with the use of an external gate electrode., Comment: 12 pages, 4 figures

The exciton dynamics on flat (001) rubrene crystal surfaces have been compared with those under confined pyramidal geometry by time-resolved photoluminescence with micrometer spatial resolution. The luminescence spectra can be interpreted in terms of generation of a free and a self-trapped exciton. Their ratio depends significantly on the structural size which we explain by the optical absorption profile of the pyramids in combination with the exciton diffusion constant. For the latter a lower limit of 0.2 cm2/s at 4 K has been estimated. Temperature-dependent decay times reveal activation barriers between free and self-trapped exciton of 3 meV and 14 meV., Comment: 4 pages, 4 figures

Nanodiamond crystals containing single color centers have been grown by chemical vapor deposition (CVD). The fluorescence from individual crystallites was directly correlated with crystallite size using a combined atomic force and scanning confocal fluorescence microscope. Under the conditions employed, the optimal size for single optically active nitrogen-vacancy (NV) center incorporation was measured to be 60 to 70 nm. The findings highlight a strong dependence of NV incorporation on crystal size, particularly with crystals less than 50 nm in size., Comment: 16 pages, 4 figures, In Print Nano Letters (2007)

Optical and microwave double resonance techniques are used to obtain the excited state structure of single nitrogen-vacancy centers in diamond. The excited state is an orbital doublet and it is shown that it can be split and associated transition strengths varied by external electric fields and by strain. A group theoretical model is developed. It gives a good account of the observations and contributes to an improved understanding of the electronic structure of the center. The findings are important for quantum information processing and other applications of the center., Comment: 4 pages, 4 figures

Nitrogen-vacancy (NV-) color centers in diamond were created by implantation of 7 keV 15N (I = 1/2) ions into type IIa diamond. Optically detected magnetic resonance was employed to measure the hyperfine coupling of the NV- centers. The hyperfine spectrum from 15NV- arising from implanted 15N can be distinguished from 14NV- centers created by native 14N (I = 1) sites. Analysis indicates 1 in 40 implanted 15N atoms give rise to an optically observable 15NV- center. This report ultimately demonstrates a mechanism by which the yield of NV- center formation by nitrogen implantation can be measured., Comment: 14 pages, 3 figures, to appear in Applied Physics Letters

We propose a method for deterministic implantation of single atoms into solids which relies on a linear ion trap as an ion source. Our approach allows a deterministic control of the number of implanted atoms and a spatial resolution of less than 1 nm. Furthermore, the method is expected to work for almost all hemical elements. The deterministic implantation of single phosphor or nitrogen atoms is interesting for the fabrication of scalable solid state quantum computers, in particular for silicon and diamond based schemes. A wide range of further applications is expected for the fabrication of nano and sub-nano electric devices.

Photochromism in single nitrogen-vacancy optical centers in diamond is demonstrated. Time-resolved optical spectroscopy shows that intense irradiation at 514 nm switches the nitrogen-vacancy defects to the negative form. This defect state relaxes back to the neutral form under dark conditions. Temporal anticorrelation of photons emitted by the different charge states of the optical center unambiguously indicates that the nitrogen-vacancy defect accounts for both 575 nm and 638 nm emission bands. Possible mechanism of photochromism involving nitrogen donors is discussed., Comment: 11 pages, 3 figures, submitted to Applied Physics B: Lasers and Optics

Single defect centers in diamond have been generated via nitrogen implantation. The defects have been investigated by single defect center fluorescence microscopy. Optical and EPR spectra unambiguously show that the produced defect is the nitrogen-vacancy colour center. An analysis of the nitrogen flux together with a determination of the number of nitrogen-vacancy centers yields that on average two 2 MeV nitrogen atoms need to be implanted per defect center., Comment: 6 pages, 3 figures

Fabrication of single nickel-nitrogen (NE8) defect centers in diamond by chemical vapor deposition is demonstrated. Under continuous-wave 745 nm laser excitation single defects were induced to emit single photon pulses at 797 nm with a linewidth of 1.5 nm at room temperature. Photon antibunching of single centers was demonstrated using a Hanbury-Brown and Twiss interferometer. Confocal images revealed approximately 10^6 optically active sites/cm^2 in the synthesized films. The fabrication of an NE8 based single photon source in synthetic diamond is important for fiber based quantum cryptography. It can also be used as an ideal point-like source for near-field optical microscopy., Comment: 15 pages, 4 figures