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Machine learning (ML) plays an important role in quantum chemistry, providing fast-to-evaluate predictive models for various properties of molecules. However, most existing ML models for molecular electronic properties use density functional theory (DFT) databases as ground truth in training, and their prediction accuracy cannot surpass that of DFT. In this work, we developed a unified ML method for electronic structures of organic molecules using the gold-standard CCSD(T) calculations as training data. Tested on hydrocarbon molecules, our model outperforms DFT with the widely-used hybrid and double hybrid functionals in computational costs and prediction accuracy of various quantum chemical properties. As case studies, we apply the model to aromatic compounds and semiconducting polymers on both ground state and excited state properties, demonstrating its accuracy and generalization capability to complex systems that are hard to calculate using CCSD(T)-level methods.

Ferroelastic twin walls in nonpolar materials can give rise to a spontaneous polarization due to symmetry breaking. Nevertheless, the bi-stable polarity of twin walls and its reversal have not yet been demonstrated. Here, we report that the polarity of SrTiO$_3$ twin walls can be switched by ultra-low strain gradient. Using first-principles-based machine-learning potential, we demonstrate that the twin walls can be deterministically rotated and realigned in specific directions under strain gradient, which breaks the inversion symmetry of a sequence of walls and leads to a macroscopic polarization. The system can maintain polarity even after the strain gradient is removed. As a result, the polarization of twin walls can exhibit ferroelectric-like hysteresis loop upon cyclic bending, namely ferro-flexoelectricity. Finally, we propose a scheme to experimentally detect the polarity of twin wall by measuring the bulk photovoltaic responses. Our findings suggest a twin-wall-mediated ferro-flexoelectricity in SrTiO$_3$, which could be potentially exploited as functional elements in nano-electronic devices design., Comment: 5 figures, 14pages

The precise controllability of the Fermi level is a critical aspect of quantum materials. For topological Weyl semimetals, there is a pressing need to fine-tune the Fermi level to the Weyl nodes and unlock exotic electronic and optoelectronic effects associated with the divergent Berry curvature. However, in contrast to 2D materials, where the Fermi level can be controlled through various techniques, the situation for bulk crystals beyond laborious chemical doping poses significant challenges. Here, we report the meV-level ultra-fine-tuning of the Fermi level of bulk topological Weyl semimetal TaP using accelerator-based high-energy hydrogen implantation and theory-driven planning. By calculating the desired carrier density and controlling the accelerator profiles, the Fermi level can be fine-tuned from 5 meV to only $\sim$0.5 meV (DFT calculations) away from the Weyl nodes. The Weyl nodes are preserved, while the carrier mobility is largely retained. Our work demonstrates the viability of this generic approach to tune the Fermi level in semimetal systems and could serve to achieve property fine-tuning for other bulk quantum materials with ultrahigh precision.

The radiative excitation of the 8.3 eV isomeric state of thorium-229 is an outstanding challenge due to the lack of tunable far-ultraviolet (F-UV) sources. In this work, we propose an efficient two-photon pumping scheme for thorium-229 using the optonuclear quadrupolar effect, which only requires a 300 nm UV-B pumping laser. We further demonstrate that population inversion between the nuclear isomeric and ground states can be achieved at room temperature using a two-step pumping process. The nuclear laser, which has been pursued for decades, may be realized using a Watt-level UV-B pumping laser and ultrawide bandgap thorium compounds (e.g., $\rm ThF_4$, $\rm Na_2ThF_6$, or $\rm K_2ThF_6$) as the gain medium., Comment: 11 pages, 3 figures

Transduction of quantum information between distinct quantum systems is an essential step in various applications, including quantum communications and quantum computing. However, mediating photons of vastly different frequencies and designing high-performance transducers are highly nontrivial, due to multifaceted and sometimes conflicting requirements. In this work, we first discuss some general principles for quantum transducer design, and then propose solid-state anti-ferromagnetic topological insulators to serve as particularly effective transducers. First, the anti-ferromagnetic order can minimize detrimental influences on nearby quantum systems caused by magnetic interactions. Second, topological insulators exhibit band-inversion, which can greatly enhance their optical responses. This property, coupled with robust spin-orbit coupling and high spin density, results in strong nonlinear interaction in magnetic topological insulators, thereby substantially improving transduction efficiency. Using MnBi2Te4 as an example, we discuss the potential experimental realization of quantum transduction based on magnetic topological materials. Particularly, we showcase that quantum transduction efficiency exceeding 90% can be achieved with modest experimental requirements, while the transduction bandwidth can reach the GHz range. The strong nonlinear photonic interactions in magnetic topological insulators can find diverse applications besides quantum transduction, such as quantum squeezing., Comment: 20 pages, 3 figures

Atomic diffusion in solids is an important process in various phenomena. However, atomistic simulations of diffusion processes are confronted with the timescale problem: the accessible simulation time is usually far shorter than that of experimental interests. In this work, we developed a long-timescale method using reinforcement learning that simulates diffusion processes. As a testbed, we simulate hydrogen diffusion in pure metals and a medium entropy alloy, CrCoNi, getting hydrogen diffusivity reasonably consistent with previous experiments. We also demonstrate that our method can accelerate the sampling of low-energy configurations compared to the Metropolis-Hastings algorithm using hydrogen migration to copper (111) surface sites as an example.

Nonlinear optical (NLO) effects have attracted great interest recently. However, by far the computational studies on NLO use the independent particle approximation and ignore many-body effects. Here we develop a generic Green's function framework to calculate the NLO response functions, which can incorporate various many-body interactions. We focus on the electron-phonon coupling and reveal that phonon dressing can make significant impacts on nonlinear photocurrent, such as the bulk photovoltaic (BPV) and bulk spin photovoltaic (BSPV) currents. BPV/BSPV should be zero for centrosymmetric crystals, but when phonons are driven out-of-equilibrium, by for example, a temperature gradient $\nabla T$, the optical selections rules are altered and phonon-pumped BPV/BSPV currents can be non-zero in nominally centrosymmetric crystal. Moreover, we elucidate that such NLO responses under non-equilibrium phonon dressing can be nonreciprocal, as the direction of the current does not necessarily get reversed when the direction of the temperature gradient is reversed., Comment: 9 pages, 4 figures

Nonlinear light-matter interaction, as the core of ultrafast optics, bulk photovoltaics, nonlinear optical sensing and imaging, and efficient generation of entangled photons, has been traditionally studied by first-principles theoretical methods with the sum-over-states approach. However, this indirect method often suffers from the divergence at band degeneracy and optical zeros as well as convergence issues and high computation costs when summing over the states. Here, using shift vector and shift current conductivity tensor as an example, we present a gauge-invariant generalized approach for efficient and direct calculations of nonlinear optical responses by representing interband Berry curvature, quantum metric, and shift vector in a generalized Wilson loop. This generalized Wilson loop method avoids the above cumbersome challenges and allows for easy implementation and efficient calculations. More importantly, the Wilson loop representation provides a succinct geometric interpretation of nonlinear optical processes and responses based on quantum geometric tensors and quantum geometric potentials and can be readily applied to studying other excited-state responses., Comment: 20 pages, 10 figures

Solid-state spin defects, especially nuclear spins with potentially achievable long coherence times, are compelling candidates for quantum memories and sensors. However, their current performances are still limited by the decoherence due to the variation of their intrinsic quadrupole and hyperfine interactions. We propose an \textit{unbalanced echo} to overcome this challenge by using a second spin to refocus the variation of these interactions, which preserves the quantum information stored in the free evolution. The unbalanced echo can be used to probe the temperature and strain distribution in materials. Experimentally, we demonstrate a 20-fold $T_2^*$ coherence time increase in an ensemble of $\sim10^{10}$ nuclear spins in diamond. Theoretically, we develop first-principles methods to predict these interaction variations and reveal their correlation in large temperature and strain ranges. We numerically show that our method can refocus stronger noise variations than our current experiments and achieves a 400-fold coherence improvement for a 25~K temperature inhomogeneity.

Nonlinear optical (NLO) responses of topological materials are under active research in recent years. Yet by far, most studies focused on the bulk properties, whereas the surface effects and the difference between surface and bulk responses have not been systematically studied. Here we develop a generic Green's function framework to investigate the surface NLO properties of topological materials. The Green's function framework can naturally incorporate many-body effects and can be easily extended to high-order NLO responses. Using Td-WTe2 as an example, we reveal that the surface can behave disparately from the bulk under light illumination. Remarkably, the shift and circular currents on the surface can flow in opposite directions to those in the bulk interior. Moreover, the light-induced spin current on the surface can be orders of magnitude stronger than its bulk counterpart. We also study the responses under inhomogeneous field and higher-order NLO effect, which are all distinct on the surface. These anomalous surface NLO responses suggest that light can be a valuable tool for probing the surface states of topological materials. On the other hand, the surface effects shall be prudently considered when investigating the optical properties of topological materials, especially if the material is of nanoscale and/or the light penetration depth is small., Comment: 17 pages, 5 figures

Quantum anomalous Hall (QAH) effect generates quantized electric charge Hall conductance without external magnetic field. It requires both nontrivial band topology and time-reversal symmetry (TRS) breaking. In most cases, one could break the TRS of time-reversal invariant topological materials to yield QAH effect, which is essentially a topological phase transition. Conventional topological phase transition induced by external field/stimulus needs a route along which the bandgap closes and re-opens. Hence, the phase transition occurs only when the magnitude of field/stimulus is larger than a critical value. In this work we propose that using gapless surface states, the transition can happen at arbitrarily weak (but finite) external field strength. This can be regarded as an unconventional topological phase transition, where the bandgap closing is guaranteed by bulk-edge correspondence and symmetries, while the bandgap reopening is induced by external fields. We demonstrate this concept on the 2D surface states of 3D topological insulators like $\rm Bi_2Se_3$, which become 2D QAH insulators once a circularly polarized light is turned on, according to van Vleck's effective Hamiltonian in Floquet time crystal theory. The sign of quantized Chern number can be controlled via the chirality of the light. This provides a convenient and dynamical approach to trigger topological phase transitions and create QAH insulators., Comment: 13 pages, 4 figures

Nonlinear optical properties, such as bulk photovoltaic effects, possess great potential in energy harvesting, photodetection, rectification, etc. To enable efficient light-current conversion, materials with strong photo-responsivity are highly desirable. In this work, we predict that monolayer Janus transition metal dichalcogenides (JTMDs) in the 1T' phase possess colossal nonlinear photoconductivity owing to their topological band mixing, strong inversion symmetry breaking, and small electronic bandgap. 1T' JTMDs have inverted bandgaps on the order of 10 meV and are exceptionally responsive to light in the terahertz (THz) range. By first-principles calculations, we reveal that 1T' JTMDs possess shift current (SC) conductivity as large as $2300 ~\rm nm \cdot \mu A / V^2$, equivalent to a photo-responsivity of $2800 ~\rm mA/W$. The circular current (CC) conductivity of 1T' JTMDs is as large as $10^4~ \rm nm \cdot \mu A / V^2$. These remarkable photo-responsivities indicate that the 1T' JTMDs can serve as efficient photodetectors in the THz range. We also find that external stimuli such as the in-plane strain and out-of-plane electric field can induce topological phase transitions in 1T' JTMDs and that the SC can abruptly flip their directions. The abrupt change of the nonlinear photocurrent can be used to characterize the topological transition and has potential applications in 2D optomechanics and nonlinear optoelectronics.

We theoretically and computationally demonstrate that static magnetization can be generated under light illumination via nonlinear Edelstein effect (NLEE). NLEE is applicable to semiconductors under both linearly and circularly polarized light, and there are no constraints from either spatial inversion or time-reversal symmetry. Remarkably, magnetization can be induced under linearly polarized light in nonmagnetic materials. With ab initio calculations, we reveal several prominent features of NLEE. We find that the orbital contributions can be significantly greater than the spin contributions. And magnetization with various orderings, including anti-ferromagnetic, ferromagnetic, etc., are all realizable with NLEE, which may facilitate many applications, such as unveiling hidden physical effects, creating a spatially varying magnetization, or manipulating the magnetization of anti-ferromagnetic materials. The relationship between NLEE and other magneto-optic effects, including the inverse Faraday effect and inverse Cotton-Mouton effect, is also discussed., Comment: 16 pages, 5 figures

The mid-infrared (MIR), far-infrared (FIR) to terahertz (THz) frequencies are the least developed parts of the electromagnetic spectrum for applications. Traditional semiconductor technologies like laser diodes and photodetectors are successful in the visible light range, but are still confronted with great challenges when extended into the MIR/FIR/THz range. In this paper, we demonstrate that topological insulators (TIs), especially those with Mexican-hat band structure (MHBS), provide a route to overcome these challenges. The optical responses of MHBS TIs can be one to two orders of magnitude larger than that of normal semiconductors at the optical-transition edge. We explore the databases of topological materials and discover a number of MHBS TIs whose bandgaps lie between $0.05\sim 0.5~\rm eV$ and possess giant gains (absorption coefficients) on the order of $10^4 \sim 10^5~\rm cm^{-1}$ at the transition edge. These findings may significantly boost potential MIR/FIR/THz applications such as photon sources, detectors, ultrafast electro-optical devices, and quantum information technologies., Comment: 16 pages, 3 figures

Spin current generators are critical components for spintronics-based information processing. In this work, we theoretically and computationally investigate the bulk spin photovoltaic (BSPV) effect for creating DC spin current under light illumination. The only requirement for BPSV is inversion symmetry breaking, thus it applies to a broad range of materials and can be readily integrated with existing semiconductor technologies. The BSPV effect is a cousin of the bulk photovoltaic (BPV) effect, whereby a DC charge current is generated under light. Thanks to the different selection rules on spin and charge currents, a pure spin current can be realized if the system possesses mirror symmetry or inversion-mirror symmetry. The mechanism of BPSV and the role of the electronic relaxation time $\tau$ are also elucidated. We apply our theory to several distinct material systems, including transition metal dichalcogenides, anti-ferromagnetic $\rm MnBi_2Te_4$, and the surface of topological crystalline insulator cubic $\rm SnTe$., Comment: 21 pages, 4 figures

The development of photonic integrated circuits would benefit from a wider selection of materials that can strongly-control near-infrared (NIR) light. Transition metal dichalcogenides (TMDs) have been explored extensively for visible spectrum opto-electronics, but the NIR properties of these layered materials have been less-studied. The measurement of optical constants is the foremost step to qualify TMDs for use in NIR photonics. Here we measure the complex optical constants for select sulfide TMDs (bulk crystals of MoS2, TiS2 and ZrS2) via spectroscopic ellipsometry in the visible-to-NIR range. Through Mueller matrix measurements and generalized ellipsometry, we explicitly measure the direction of the ordinary optical axis. We support our measurements with density functional theory (DFT) calculations, which agree with our measurements and predict giant birefringence. We further propose that TMDs could find use as photonic phase-change materials, by designing alloys that are thermodynamically adjacent to phase boundaries between competing crystal structures, to realize martensitic (i.e. displacive, order-order) switching., Comment: supplementary at end of document. 6 main figures