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Dual quantum spin Hall insulator (QSHI) is a newly discovered topological state in the 2D material TaIrTe$_4$, exhibiting both a traditional $Z_2$ band gap at charge neutrality point and a van Hove singularity (VHS) induced correlated $Z_2$ band gap with weak doping. Inspired by the recent progress in theoretical understanding and experimental measurements, we predicted a promising dual QSHI in the counterpart material of the NbIrTe4 monolayer by first-principles calculations. In addition to the well-known band inversion at the charge neutrality point, two new band inversions were found after CDW phase transition when the chemical potential is near the VHS, one direct and one indirect $Z_2$ band gap. The VHS-induced non-trivial band gap is around 10 meV, much larger than that from TaIrTe$_4$. Furthermore, since the new generated band gap is mainly dominated by the $4d$ orbitals of Nb, electronic correlation effects should be relatively stronger in NbIrTe$_4$ as compared to TaIrTe$_4$. Therefore, the dual QSHI state in the NbIrTe$_4$ monolayer is expected to be a good platform for investigating the interplay between topology and correlation effects.

Topological insulating states in two-dimensional (2D) materials are ideal systems to study different types of quantized response signals due to their in gap metallic states. Very recently, the quantum spin Hall (QSH) effect was discovered in monolayer $\text{TaIrTe}_4$ via the observation of quantized longitudinal conductance that rarely exists in other 2D topological insulators. The non-trivial $Z_2$ topological charges can exist at both charge neutrality point and the van Hove singularity point with correlation effect induced band gap. Based on this model 2D material, we studied the switch of quantized signals between longitudinal conductance and transversal Hall conductance via tuning external magnetic field. In $Z_2$ topological phase of monolayer $\text{TaIrTe}_4$, the zero Chern number can be understood as 1-1=0 from the double band inversion from spin-up and spin-down channels. After applying a magnetic field perpendicular to the plane, the Zeeman split changes the band order for one branch of the band inversion from spin-up and spin-down channels, along with a sign charge of the Berry phase. Then the net Chern number of 1-1=0 is tuned to 1+1=2 or -1-1=-2 depending on the orientation of the magnetic field. The quantized signal not only provides another effective method for the verification of topological state in monolayer $\text{TaIrTe}_4$, but also offers a strategy for the utilization of the new quantum topological states based on switchable quantized responses.

The septuple-atomic-layer $\mathrm{VSi_2P_4}$ with the same structure of experimentally synthesized $\mathrm{MoSi_2N_4}$ is predicted to be a spin-gapless semiconductor (SGS). In this work, the biaxial strain is applied to tune electronic properties of $\mathrm{VSi_2P_4}$, and it spans a wide range of properties upon the increasing strain from ferromagnetic metal (FMM) to SGS to ferromagnetic semiconductor (FMS) to SGS to ferromagnetic half-metal (FMHM). Due to broken inversion symmetry, the coexistence of ferromagnetism and piezoelectricity can be achieved in FMS $\mathrm{VSi_2P_4}$ with strain range of 0\% to 4\%. The calculated piezoelectric strain coefficients $d_{11}$ for 1\%, 2\% and 3\% strains are 4.61 pm/V, 4.94 pm/V and 5.27 pm/V, respectively, which are greater than or close to a typical value of 5 pm/V for bulk piezoelectric materials. Finally, similar to $\mathrm{VSi_2P_4}$, the coexistence of piezoelectricity and ferromagnetism can be realized by strain in the $\mathrm{VSi_2N_4}$ monolayer. Our works show that $\mathrm{VSi_2P_4}$ in FMS phase with intrinsic piezoelectric properties can have potential applications in spin electronic devices., Comment: 6 pages,7 figures

The discovery of topological quantum states marks a new chapter in both condensed matter physics and materials sciences. By analogy to spin electronic system, topological concepts have been extended into phonons, boosting the birth of topological phononics (TPs). Here, we present a high-throughput screening and data-driven approach to compute and evaluate TPs among over 10,000 materials. We have clarified 5014 TP materials and classified them into single Weyl, high degenerate Weyl, and nodal-line (ring) TPs. Among them, three representative cases of TPs have been discussed in detail. Furthermore, we suggest 322 TP materials with potential clean nontrivial surface states, which are favorable for experimental characterizations. This work significantly increases the current library of TP materials, which enables an in-depth investigation of their structure-property relations and opens new avenues for future device design related to TPs., Comment: Maintext: 7 pages and 4 figures; Supplementary Materials: 14,246 pages, 5100 supplementary figures and 11,782 supplementary tables

By means of first-principles calculations and modeling analysis, we have predicted that the traditional 2D-graphene hosts the topological phononic Weyl-like points (PWs) and phononic nodal line (PNL) in its phonon spectrum. The phonon dispersion of graphene hosts three type-I PWs (both PW1 and PW2 at the BZ corners \emph{K} and \emph{K}', and PW3 locating along the $\Gamma$-\emph{K} line), one type-II PW4 locating along the $\Gamma$-\emph{M} line, and one PNL surrounding the centered $\Gamma$ point in the $q_{x,y}$ plane. The calculations further reveal that Berry curvatures are vanishingly zero throughout the whole BZ, except for the positions of these four pairs of Weyl-like phonons, at which the non-zero singular Berry curvatures appear with the Berry phase of $\pi$ or -$\pi$, confirming its topological non-trivial nature. The topologically protected non-trivial phononic edge states have been also evidenced along both the zigzag-edged and armchair-edged boundaries. These results would pave the ways for further studies of topological phononic properties of graphene, such as phononic destructive interference with a suppression of backscattering and intrinsic phononic quantum Hall-like effects., Comment: 5 pages, 4 figures

By means of variable-composition evolutionary algorithm coupled with density functional theory and in combination with aberration-corrected high-resolution transmission electron microscopy experiments, we have studied and characterized the composition, structure and hardness properties of WB$_{3+x}$ ($x$ $<$ 0.5). We provide robust evidence for the occurrence of stoichiometric WB$_3$ and non-stoichiometric WB$_{3+x}$ both crystallizing in the metastable $hP$16 ($P6_3/mmc$) structure. No signs for the formation of the highly debated WB$_4$ (both $hP$20 and $hP$10) phases were found. Our results rationalize the seemingly contradictory high-pressure experimental findings and suggest that the interstitial boron atom is located in the tungsten layer and vertically interconnect with four boron atoms, thus forming a typical three-center boron net with the upper and lower boron layers in a three-dimensional covalent network, which thereby strengthen the hardness., Comment: 5 pages, 5 figures