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Radiative cascades emit correlated photon pairs, providing a pathway for the generation of entangled photons. The realization of a radiative cascade with impurity atoms in semiconductors, a leading platform for the generation of quantum light, would therefore provide a new avenue for the development of entangled photon pair sources. Here we demonstrate a radiative cascade from the decay of a biexciton at an impurity-atom complex in a ZnSe quantum well. The emitted photons show clear temporal correlations revealing the time--ordering of the cascade. Our result establishes impurity atoms in ZnSe as a potential platform for photonic quantum technologies using radiative cascades., Comment: 5 pages, 4 figures

Defects in wide-bandgap semiconductors are promising qubit candidates for quantum communication and computation. Epitaxially grown II-VI semiconductors are particularly promising host materials due to their direct bandgap and potential for isotopic purification to a spin-zero nuclear background. Here, we show a new type of single photon emitter with potential electron spin qubit based on Cl impurities in ZnSe. We utilize a quantum well to increase the binding energies of donor emission and confirm single photon emission with short radiative lifetimes of 192 ps. Furthermore, we verify that the ground state of the Cl donor complex contains a single electron by observing two-electron satellite emission, leaving the electron in higher orbital states. We also characterize the Zeeman splitting of the exciton transition by performing polarization-resolved magnetic spectroscopy on single emitters. Our results suggest single Cl impurities are suitable as single photon source with potential photonic interface., Comment: 7 pages, 6 figures

Optically-active spin systems coupled to photonic cavities with high cooperativity can generate strong light-matter interactions, a key ingredient in quantum networks. But obtaining high cooperativities for quantum information processing often involves the use of photonic crystal cavities that feature a poor optical access from the free space, especially to circularly polarized light required for the coherent control of the spin. Here, we demonstrate coupling with cooperativity as high as $8$ of an InAs/GaAs quantum dot to a fabricated bullseye cavity that provides nearly degenerate and Gaussian polarization modes for efficient optical accessing. We observe spontaneous emission lifetimes of the quantum dot as short as $80$ ps (a $\approx 15$ Purcell enhancement) and a $\approx 80\%$ transparency of light reflected from the cavity. Leveraging the induced transparency for photon switching while coherently controlling the quantum dot spin could contribute to ongoing efforts of establishing quantum networks.

Atomic frequency combs memories that coherently store optical signals are a key building block for optical quantum computers and quantum networks. Integrating such memories into compact and chip-scale devices is essential for scalable quantum technology, but to date most demonstrations have been in bulk materials or waveguides with large cross-sections, or using fabrication techniques not easily adaptable to wafer scale processing. We demonstrate compact chip-integrated atomic frequency comb storage in rare earth doped thin-film lithium niobate. Our optical memory exhibits a broad storage bandwidth exceeding 100 MHz, and optical storage time of over 250 ns. The enhanced optical confinement in this device structure enables three orders of magnitude reduction in optical power as compared to large ion-diffused waveguides for the same Rabi frequency. These compact atomic frequency comb memories pave the way towards scalable, highly efficient, electro-optically tunable quantum photonic systems that can store and manipulate light on a compact chip.

Noise spectroscopy elucidates the fundamental noise sources in spin systems, thereby serving as an essential tool toward developing spin qubits with long coherence times for quantum information processing, communication, and sensing. But existing techniques for noise spectroscopy that rely on microwave fields become infeasible when the microwave power is too weak to generate Rabi rotations of the spin. Here, we demonstrate an alternative all-optical approach to performing noise spectroscopy. Our approach utilizes coherent Raman rotations of the spin state with controlled timing and phase to implement Carr-Purcell-Meiboom-Gill pulse sequences. Analyzing the spin dynamics under these sequences enables us to extract the noise spectrum of a dense ensemble of nuclear spins interacting with a single spin in a quantum dot, which has thus far only been modeled theoretically. By providing spectral bandwidths of over 100 MHz, our approach enables the studies of spin dynamics and decoherence for a broad range of solid-state spin qubits.

Rare-earth ion ensembles doped in single crystals are a promising materials system with widespread applications in optical signal processing, lasing, and quantum information processing. Incorporating rare-earth ions into integrated photonic devices could enable compact lasers and modulators, as well as on-chip optical quantum memories for classical and quantum optical applications. To this end, a thin film single crystalline wafer structure that is compatible with planar fabrication of integrated photonic devices would be highly desirable. However, incorporating rare-earth ions into a thin film form-factor while preserving their optical properties has proven challenging. We demonstrate an integrated photonic platform for rare-earth ions doped in a single crystalline thin film on insulator. The thin film is composed of lithium niobate doped with Tm3+. The ions in the thin film exhibit optical lifetimes identical to those measured in bulk crystals. We show narrow spectral holes in a thin film waveguide that require up to 2 orders of magnitude lower power to generate than previously reported bulk waveguides. Our results pave way for scalable on-chip lasers, optical signal processing devices, and integrated optical quantum memories.

Charged quantum dots containing an electron or hole spin are bright solid-state qubits suitable for quantum networks and distributed quantum computing. Incorporating such quantum dot spin into a photonic crystal cavity creates a strong spin-photon interface, in which the spin can control a photon by modulating the cavity reflection coefficient. However, previous demonstrations of such spin-photon interfaces have relied on quantum dots that are charged randomly by nearby impurities, leading to instability in the charge state, which causes poor contrast in the cavity reflectivity. Here we demonstrate a strong spin-photon interface using a quantum dot that is charged deterministically with a diode structure. By incorporating this actively charged quantum dot in a photonic crystal cavity, we achieve strong coupling between the cavity mode and the negatively charged state of the dot. Furthermore, by initializing the spin through optical pumping, we show strong spin-dependent modulation of the cavity reflectivity, corresponding to a cooperativity of 12. This spin-dependent reflectivity is important for mediating entanglement between spins using photons, as well as generating strong photon-photon interactions for applications in quantum networking and distributed quantum computing.

Chiral light-matter interactions can enable polarization to control the direction of light emission in a photonic device. Most realizations of chiral light-matter interactions require external magnetic fields to break time-reversal symmetry of the emitter. One way to eliminate this requirement is to utilize strong spin-orbit coupling present in transition metal dichalcogenides that exhibit a valley dependent polarized emission. Such interactions were previously reported using plasmonic waveguides, but these structures exhibit short propagation lengths due to loss. Chiral dielectric structures exhibit much lower loss levels and could therefore solve this problem. We demonstrate chiral light-matter interactions using spin-valley states of transition metal dichalcogenide monolayers coupled to a dielectric waveguide. We use a photonic crystal glide plane waveguide that exhibits chiral modes with high field intensity, coupled to monolayer WSe2. We show that the circularly polarized emission of the monolayer preferentially couples to one direction of the waveguide, with a directionality as high as 0.35, limited by the polarization purity of the bare monolayer emission. This system enables on-chip directional control of light and could provide new ways to control spin and valley degrees of freedom in a scalable photonic platform.

Integration of single-photon sources and detectors to silicon-based photonics opens the possibility of complex circuits for quantum information processing. In this work, we demonstrate integration of quantum dots with a silicon photonic add-drop filter for on-chip filtering and routing of telecom single photons. A silicon microdisk resonator acts as a narrow filter that transfers the quantum dot emission and filters the background over a wide wavelength range. Moreover, by tuning the quantum dot emission wavelength over the resonance of the microdisk we can control the transmission of the emitted single photons to the drop and through channels of the add-drop filter. This result is a step toward the on-chip control of single photons using silicon photonics for applications in quantum information processing, such as linear optical quantum computation and boson sampling.

Fiber-coupled single photon sources are essential components of photonics-based quantum information processors. Most fiber-coupled single photon sources require careful alignment between fibers and quantum emitters. In this work, we present an alignment-free fiber-integrated single photon source based on an InAs/InP quantum dot emitting at telecom wavelengths. We designed a nanobeam containing the quantum dots attached to a fiber taper. The adiabatic tapered coupler of the nanobeam enables efficient light coupling to the fiber taper. Using a tungsten probe in a focused ion beam system, we transferred the nanobeam to the fiber taper. The observed fiber-coupled single photon emission occurs with a brightness of 1.5% and purity of 86%. This device provides a building block for fiber-optic quantum circuits that have various applications, such as quantum communication and distributed quantum computing.

InAs/InP quantum dots are excellent sources of telecom single-photon emission and are among the most promising candidates for scalable quantum photonic circuits. However, geometric differences in each quantum dot leads to slightly different emission wavelengths and hinders the possibility of generating multiple identical quantum emitters on the same chip. Stark tuning is an efficient technique to overcome this issue as it can control the emission energy of individual quantum dots through the quantum-confined Stark effect. Realizing this technique in InAs/InP quantum dots has previously been limited to shifts of less than 0.8 meV due to jumps in the emission energy because of additional charges at high electric field intensities. We demonstrate up to 5.1 meV of Stark tuning in the emission wavelength of InAs/InP quantum dots. To eliminate undesirable jumps to charged state, we use a thin oxide insulator to prevent carrier injection from the contacts, thereby significantly improves the tuning range of the Stark effect. Moreover, the single-photon nature and narrow linewidth of the quantum dot emission is preserved under a wide range of applied electric fields. Using photoluminescence intensity measurements and time-resolved lifetime spectroscopy we confirmed that this Stark tuning range is limited by carrier tunneling at high electric fields. This result is an important step toward integrating multiple identical quantum emitters at telecom wavelengths on-a-chip, which is crucial for realizing complex quantum photonic circuits for quantum information processing.

The integration of quantum emitters with integrated photonics enables complex quantum photonic circuits that are necessary for photonic implementation of quantum simulators, computers, and networks. Thin-film lithium niobate is an ideal material substrate for quantum photonics because it can tightly confine light in small waveguides and has a strong electro-optic effect that can switch and modulate single photons at low power and high speed. However, lithium niobite lacks efficient single-photon emitters, which are essential for scalable quantum photonic circuits. We demonstrate deterministic coupling of single-photon emitters with a lithium niobate photonic chip. The emitters are composed of InAs quantum dots embedded in an InP nanobeam, which we transfer to a lithium niobate waveguide with nanoscale accuracy using a pick-and place approach. An adiabatic taper transfers single photons emitted into the nanobeam to the lithium niobate waveguide with high efficiency. We verify the single photon nature of the emission using photon correlation measurements performed with an on-chip beamsplitter. Our results demonstrate an important step toward fast, reconfigurable quantum photonic circuits for quantum information processing.

Coupling single photon emitters to surface plasmons provides a versatile ground for on chip quantum photonics. However, achieving good coupling efficiency requires precise alignment of both the position and dipole orientation of the emitter relative to the plasmonic mode. We demonstrate coupling of single emitters in the 2-D semiconductor, WSe2 self-aligned with propagating surface plasmon polaritons in silver-air-silver, metal-insulator-metal waveguides. The waveguide produces strain induced defects in the monolayer which are close to the surface plasmon mode with favorable dipole orientations for optimal coupling. We measure an average enhancement in the rate of spontaneous emission by a factor of 1.89 for coupling the single defects to the plasmonic waveguide. This architecture provides an efficient way of coupling single photon emitters to propagating plasmons which is an important step towards realizing active plasmonic circuits on chip., Comment: 8 pages, 4 figures

Single-photon switches and transistors generate strong photon-photon interactions that are essential for quantum circuits and networks. However, to deterministically control an optical signal with a single photon requires strong interactions with a quantum memory, which have been lacking in a solid-state platform. We realize a single-photon switch and transistor enabled by a solid-state quantum memory. Our device consists of a semiconductor spin qubit strongly coupled to a nanophotonic cavity. The spin qubit enables a single gate photon to switch a signal field containing up to an average of 27.7 photons, with a switching time of 63 ps. Our results show that semiconductor nanophotonic devices can produce strong and controlled photon-photon interactions that could enable high-bandwidth photonic quantum information processing.

Future scalable photonic quantum information processing relies on the ability of integrating multiple interacting quantum emitters into a single chip. Quantum dots provide ideal on-chip quantum light sources. However, achieving quantum interaction between multiple quantum dots on-a-chip is a challenging task due to the randomness in their frequency and position, requiring local tuning technique and long-range quantum interaction. Here, we demonstrate quantum interactions between distant two quantum dots on a nanophotonic waveguide. We achieve a photon-mediated long-range interaction by integrating the quantum dots to the same optical mode of a nanophotonic waveguide and overcome spectral mismatch by incorporating on-chip thermal tuners. We observe their quantum interactions of the form of super-radiant emission, where the two dots collectively emit faster than each dot individually. Creating super-radiant emission from integrated quantum emitters could enable compact chip-integrated photonic structures that exhibit long-range quantum interactions. Therefore, these results represent a major step towards establishing photonic quantum information processors composed of multiple interacting quantum emitters on a semiconductor chip., Comment: 23 pages, 7 figures

Plasmonic nano-structures provides an efficient way to control and enhance the radiative properties of quantum emitters. Coupling these structures to single defects in low-dimensional materials provides a particularly promising material platform to study emitter-plasmon interactions because these emitters are not embedded in a surrounding dielectric. They can therefore approach a near-field plasmonic mode to nanoscale distances, potentially enabling strong light-matter interactions. However, this coupling requires precise alignment of the emitters to the plasmonic mode of the structures, which is particularly difficult to achieve in a site-controlled structure. We present a technique to generate quantum emitters in 2D tungsten diselenide (WSe2) coupled to site-controlled plasmonic nano-pillars. The plasmonic nano-pillars induce strain in the two dimensional material which generates quantum emitters near the high-field region of the plasmonic mode. The electric field of the nano-pillar mode lies close to parallel with the two-dimensional material, and is therefore in the correct orientation to couple to quantum emitters. Interactions between the emitter and plasmonic mode result in an enhanced spontaneous emission and increased brightness. This approach may enable bright site-controlled non-classical light sources for applications in quantum communication and optical quantum computing.

The application of topology in optics has led to a new paradigm in developing photonic devices with robust properties against disorder. Although significant progress on topological phenomena has been achieved in the classical domain, the realization of strong light-matter coupling in the quantum domain remains unexplored. We demonstrate a strong interface between single quantum emitters and topological photonic states. Our approach creates robust counter-propagating edge states at the boundary of two distinct topological photonic crystals. We demonstrate the chiral emission of a quantum emitter into these modes and establish their robustness against sharp bends. This approach may enable the development of quantum optics devices with built-in protection, with potential applications in quantum simulation and sensing.

Atomically-thin films of phosphorene (also known as black phosphorus) are a low dimensional optical material with direct exciton emission, whose wavelength is tunable by controlling the number of layers. In addition to this excitonic emission, recent works revealed the existence of emissions from defect states and described new methods to manipulate them. Monolayer phosphorene exhibits emission from localized defect states at wavelengths near 920 nm. Increasing the number of layers should shift the defect emission to longer wavelengths, enabling the material to span a broader spectral range. However, defect emission from few-layer phosphorene has not yet been reported. In this paper, we demonstrate the existence of a new class of near-infrared emission from defect states in few-layer phosphorene. Photoluminescence measurements show a bright emission around 1240 nm with a sublinear growth of emission intensity when the excitation intensity is linearly increased, confirming the defect-based nature of this emission. From time-resolved lifetime measurements we determine an emission lifetime of 1.1 ns, in contrast with the exciton lifetime from phosphorene, which has been previously reported to be in the range of a few hundred picoseconds. This work shows that phosphorene defects can act as a source of infrared light with potential applications in optoelectronics.

We demonstrate optical readout of a single electron spin using cavity quantum electrodynamics. The spin is trapped in a single quantum dot that is strongly coupled to a nanophotonic cavity. Selectively coupling one of the optical transitions of the quantum dot to the cavity mode results in a spin-dependent cavity reflectivity that enables projective spin measurements by monitoring the reflected intensity of an incident optical field. Using this approach, we demonstrate spin readout fidelity of 0.61 for a quantum dot that has a poor branching ratio of 0.43. Achieving this fidelity using resonance fluorescence from a bare dot would require 43 times improvement in photon collection efficiency.

Coupling of an atom-like emitter to surface plasmons provides a path toward significant optical nonlinearity, which is essential in quantum information processing and quantum networks. A large coupling strength requires nanometer-scale positioning accuracy of the emitter near the surface of the plasmonic structure, which is challenging. We demonstrate the coupling of single localized defects in a tungsten diselenide (WSe2) monolayer self-aligned to the surface plasmon mode of a silver nanowire. The silver nanowire induces a strain gradient on the monolayer at the overlapping area, leading to the formation of localized defect emission sites that are intrinsically close to the surface plasmon. We measure a coupling efficiency with a lower bound of 39% from the emitter into the plasmonic mode of the silver nanowire. This technique offers a way to achieve efficient coupling between plasmonic structures and localized defects of 2D semiconductors.

Interactions between solid-state quantum emitters and cavities are important for a broad range of applications in quantum communication, linear optical quantum computing, nonlinear photonics, and photonic quantum simulation. These applications often require combining many devices on a single chip with identical emission wavelengths in order to generate two-photon interference, the primary mechanism for achieving effective photon-photon interactions. Such integration remains extremely challenging due to inhomogeneous broadening and fabrication errors that randomize the resonant frequencies of both the emitters and cavities. In this letter we demonstrate two-photon interference from independent cavity-coupled emitters on the same chip, providing a potential solution to this long-standing problem. We overcome spectral mismatch between different cavities due to fabrication errors by depositing and locally evaporating a thin layer of condensed nitrogen. We integrate optical heaters to tune individual dots within each cavity to the same resonance with better than 3 {\mu}eV of precision. Combining these tuning methods, we demonstrate two-photon interference between two devices spaced by less than 15 {\mu}m on the same chip with a post-selected visibility of 33%. These results pave the way to integrate multiple quantum light sources on the same chip to develop quantum photonic devices., Comment: 18 Pages in total, including 5 figures

We present an all-dielectric photonic crystal structure that supports two-dimensionally confined helical topological edge states. The topological properties of the system are controlled by the crystal parameters. An interface between two regions of differing band topologies gives rise to topological edge states confined in a dielectric slab that propagate around sharp corners without backscattering. Three dimensional finite-difference time-domain calculations show these edges to be confined in the out-of-plane direction by total internal reflection. Such nanoscale photonic crystal architectures could enable strong interactions between photonic edge states and quantum emitters.

Strong interactions between single spins and photons are essential for quantum networks and distributed quantum computation. They provide the necessary interface for entanglement distribution, non-destructive quantum measurements, and strong photon-photon interactions. Achieving spin-photon interactions in a solid-state device could enable compact chip-integrated quantum circuits operating at gigahertz bandwidths. Many theoretical works have suggested using spins embedded in nanophotonic structures to attain this high-speed interface. These proposals exploit strong light-matter interactions to implement a quantum switch, where the spin flips the state of the photon and a photon flips the spin-state. However, such a switch has not yet been realized using a solid-state spin system. Here, we report an experimental realization of a spin-photon quantum switch using a single solid-state spin embedded in a nanophotonic cavity. We show that the spin-state strongly modulates the cavity reflection coefficient, which conditionally flips the polarization state of a reflected photon on picosecond timescales. We also demonstrate the complementary effect where a single photon reflected from the cavity coherently rotates the spin. These strong spin-photon interactions open up a promising direction for solid-state implementations of high-speed quantum networks and on-chip quantum information processors using nanophotonic devices., Comment: The final version of this paper is published online on Nature Nanotechnology (doi:10.1038/nnano.2015.334). Supplementary materials are available in the same link

When an atom strongly couples to a cavity, it can undergo coherent vacuum Rabi oscillations. Controlling these oscillatory dynamics quickly relative to the vacuum Rabi frequency enables remarkable capabilities such as Fock state generation and deterministic synthesis of quantum states of light, as demonstrated using microwave frequency devices. At optical frequencies, however, dynamical control of single-atom vacuum Rabi oscillations remains challenging. Here, we demonstrate coherent transfer of optical frequency excitation between a single quantum dot and a cavity by controlling vacuum Rabi oscillations. We utilize a photonic molecule to simultaneously attain strong coupling and a cavity-enhanced AC Stark shift. The Stark shift modulates the detuning between the two systems on picosecond timescales, faster than the vacuum Rabi frequency. We demonstrate the ability to add and remove excitation from the cavity, and perform coherent control of light-matter states. These results enable ultra-fast control of atom-cavity interactions in a nanophotonic device platform., Comment: Supplement available upon request from R. Bose and E. Waks

Nitrogen vacancy (NV) color centers in diamond have emerged as highly versatile optical emitters that exhibit room temperature spin properties. These characteristics make NV centers ideal for magnetometry, which plays an important role in chemical and biological sensing applications. The integration of NV magnetometers with microfluidic systems could enable the study of isolated chemical and biological samples in a fluid environment with high spatial resolution. Here we demonstrate a method to perform localized magnetometry with nanometer spatial precision using a single NV center in a microfluidic device. We manipulate a magnetic particle within a liquid environment using a combination of planar microfluidic flow control and vertical magnetic actuation to achieve 3-dimensional manipulation. A diamond nanocrystal containing a single NV center is deposited in the microfluidic channels and acts as a local magnetic field probe. We map out the magnetic field distribution of the magnetic particle by varying its position relative to the diamond nanocrystal and performing optically resolved electron spin resonance (ESR) measurements. We control the magnetic particle position with a 48 nm precision and attain a magnetic field sensitivity of 17.5 microTesla/Hz^1/2. These results open up the possibility for studying local magnetic properties of biological and chemical systems with high sensitivity in an integrated microfluidic platform., Comment: 14 pages, 4 figures

We propose a method to overcome Auger recombination in nanocrystal quantum dot lasers using cavity-enhanced spontaneous emission. We derive a numerical model for a laser composed of nanocrystal quantum dots coupled to optical nanocavities with small mode-volume. Using this model, we demonstrate that spontaneous emission enhancement of the biexciton transition lowers the lasing threshold by reducing the effect of Auger recombination. We analyze a photonic crystal nanobeam cavity laser as a realistic device structure that implements the proposed approach., Comment: 18 pages, 6 figures

We experimentally demonstrate that the Mollow triplet sidebands of a quantum dot strongly coupled to a cavity exhibit anomalous power induced broadening and enhanced emission when one sideband is tuned over the cavity frequency. We observe a nonlinear increase of the sideband linewidth with excitation power when the Rabi frequency exceeds the detuning between the quantum dot and the cavity, consistent with a recent theoretical model that accounts for acoustic phonon-induced processes between the exciton and the cavity. In addition, the sideband tuned to the cavity shows strong resonant emission enhancement., Comment: 13 pages, 4 figures

We demonstrate reversible strain-tuning of a quantum dot strongly coupled to a photonic crystal cavity. We observe an average redshift of 0.45 nm for quantum dots located inside the cavity membrane, achieved with an electric field of 15 kV/cm applied to a piezo-electric actuator. Using this technique, we demonstrate the ability to tune a quantum dot into resonance with a photonic crystal cavity in the strong coupling regime, resulting in a clear anti-crossing. The bare cavity resonance is less sensitive to strain than the quantum dot and shifts by only 0.078 nm at the maximum applied electric field.

We present a method to control the resonant coupling interaction in a coupled-cavity photonic crystal molecule by using a local and reversible photochromic tuning technique. We demonstrate the ability to tune both a two-cavity and a three-cavity photonic crystal molecule through the resonance condition by selectively tuning the individual cavities. Using this technique, we can quantitatively determine important parameters of the coupled-cavity system such as the photon tunneling rate. This method can be scaled to photonic crystal molecules with larger numbers of cavities, which provides a versatile method for studying strong interactions in coupled resonator arrays., Comment: 4 figures

We demonstrate a method of tuning a semiconductor quantum dot (QD) onto resonance with a cavity mode all-optically. We use a system comprised of two evanescently coupled cavities containing a single QD. One resonance of the coupled cavity system is used to generate a cavity enhanced optical Stark shift, enabling the QD to be resonantly tuned to the other cavity mode. A twenty-seven fold increase in photon emission from the QD is measured when the off-resonant QD is Stark shifted into the cavity mode resonance, which is attributed to radiative enhancement of the QD. A maximum tuning of 0.06 nm is achieved for the QD at an incident power of 88 {\mu}W., Comment: 10 pages, 3 figures

We present a feasible scheme for performing an optically controlled phase gate between two conduction electron spin qubits in adjacent self assembled quantum dots. Interaction between the dots is mediated by the tunneling of the valence hole state which is activated only by applying a laser pulse of the right polarization and frequency. Combining the hole tunneling with the Pauli blocking effect, we obtain conditional dynamics for the two quantum dots, which is the essence of our gating operations. Our results are of explicit relevance to the recent generation of vertically stacked self-assembled InAs quantum dots, and show that by a design which avoids unintended dynamics the gate could be implemented in theory in the 10 ps range and with a fidelity over 90%. Our proposal therefore offers an accessible path to the demonstration of ultrafast quantum logic in quantum dots.

We apply magnetic fields of up to 7 T to an indium arsenide (InAs) quantum dot (QD) strongly coupled to a photonic crystal cavity. The field lifts the degeneracy of QD exciton spin states, and tune their emission energy by a combination of diamagnetic and Zeeman energy shifts. We use magnetic field tuning to shift the energies of the two spin states to be selectively on resonance with the cavity. Strong coupling between the cavity and both spin states is observed. Magnetic field tuning enables energy shifts as large as 0.83 meV without significant degradation of the QD-cavity coupling strength.

Photon correlation measurements reveal memory effects in the optical emission of single InAs quantum dots with timescales from 10 to 800 ns. With above-band optical excitation, a long-timescale negative correlation (antibunching) is observed, while with quasi-resonant excitation, a positive correlation (blinking) is observed. A simple model based on long-lived charged states is presented that approximately explains the observed behavior, providing insight into the excitation process. Such memory effects can limit the internal efficiency of light emitters based on single quantum dots, and could also be problematic for proposed quantum-computation schemes., Comment: 8 pages, 8 figures