1. Colossal angular magnetoresistance in ferrimagnetic nodal-line semiconductors
- Author
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Bohm-Jung Yang, Jae Hoon Kim, Junho Seo, Ji Eun Lee, Bongjae Kim, Jun Sung Kim, Joonbum Park, Sang-Wook Cheong, Hyunsoo Ha, Eun Sang Choi, Gil Young Cho, Chandan De, S. Park, Yurii Skourski, Kyoo Kim, and Han Woong Yeom
- Subjects
Physics ,Condensed Matter::Materials Science ,Magnetization ,Multidisciplinary ,Condensed matter physics ,Spintronics ,Magnetoresistance ,Ferrimagnetism ,Magnet ,Condensed Matter::Strongly Correlated Electrons ,Magnetic semiconductor ,Degeneracy (mathematics) ,Spin (physics) - Abstract
Efficient magnetic control of electronic conduction is at the heart of spintronic functionality for memory and logic applications1,2. Magnets with topological band crossings serve as a good material platform for such control, because their topological band degeneracy can be readily tuned by spin configurations, dramatically modulating electronic conduction3–10. Here we propose that the topological nodal-line degeneracy of spin-polarized bands in magnetic semiconductors induces an extremely large angular response of magnetotransport. Taking a layered ferrimagnet, Mn3Si2Te6, and its derived compounds as a model system, we show that the topological band degeneracy, driven by chiral molecular orbital states, is lifted depending on spin orientation, which leads to a metal–insulator transition in the same ferrimagnetic phase. The resulting variation of angular magnetoresistance with rotating magnetization exceeds a trillion per cent per radian, which we call colossal angular magnetoresistance. Our findings demonstrate that magnetic nodal-line semiconductors are a promising platform for realizing extremely sensitive spin- and orbital-dependent functionalities. A study reports a colossal angular magnetoresistance in the topological magnet Mn3Si2Te6, resulting from a metal-to-insulator transition caused by controlled lifting of a topological band degeneracy, and discusses the key parameters involved.
- Published
- 2021
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