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We theoretically study a ferrimagnetic domain-wall motion driven by a rotating magnetic field. We find that, depending on the magnitude and the frequency of the rotating field, the dynamics of a ferrimagnetic domain wall can be classified into two regimes. First, when the frequency is lower than a certain critical frequency set by the field magnitude, there is a stationary solution for the domain-wall dynamics, where a domain-wall in-plane magnetization rotates in-phase with the external field. The field-induced precession of the domain wall gives rise to the translational motion of the domain wall via the gyrotropic coupling between the domain-wall angle and position. In this so-called phase-locking regime, a domain-wall velocity increases as the frequency increases. Second, when the frequency exceeds the critical frequency, a domain-wall angle precession is not synchronous with the applied field. In this phase-unlocking regime, a domain wall velocity decreases as the frequency increases. Moreover, the direction of the domain-wall motion is found to be reversed across the angular compensation point where the net spin density of the ferrimagnet changes its sign. Our work suggests that the dynamics of magnetic solitons under time-varying biases may serve as platform to study critical phenomena., Comment: 7 pages, 1 table, 3 figures

Magnetic domain wall motion is numerically studied in a nanowire with a Dzyaloshinskii-Moriya interaction (DMI) step at which DMI varies in real space. The spatially modulated DMI results in the formation of asymmetric domain wall energy landscape across the step, which affects the domain wall motion significantly. Utilizing this DMI step, we propose a domain wall memory device where the switching of up- and down-state is induced by a spin-orbit spin-transfer torque (SOT)-driven domain wall motion. This domain wall memory device is expected to have a high switching efficiency.

For a thin ferromagnetic film with the Dzyaloshinskii-Moriya interaction (DMI), we derive an expression of the extrinsic ferromagnetic resonance (FMR) linewidth in a quantum mechanical way, taking into account scatterings from structural inhomogeneity. In the presence of the DMI, the magnon dispersion exhibits rich resonant states, especially in small external magnetic fields and strong DMI strength. It is found that the FMR linewidth shows several characteristic features such as a finite linewidth at zero frequency and peaks in the low frequency range., 9 pages, 5 figures

Magnetic skyrmions are of considerable interest for low-power memory and logic devices because of high speed at low current and high stability due to topological protection. We propose a skyrmion field-effect transistor based on a gate-controlled Dzyaloshinskii-Moriya interaction. A key working principle of the proposed skyrmion field-effect transistor is a large transverse motion of skyrmion, caused by an effective equilibrium damping-like spin-orbit torque due to spatially inhomogeneous Dzyaloshinskii-Moriya interaction. This large transverse motion can be categorized as the skyrmion Hall effect, but has been unrecognized previously. The propose device is capable of multi-bit operation and Boolean functions, and thus is expected to serve as a low-power logic device based on the magnetic solitons., Comment: 16 pages, 3 figures