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[EN] The effects of the offset level and of the doping level in the perovskite layer upon both the reverse saturation current (J0) and the series resistance (Rs) of p-p-n perovskite solar cells have been researched in this paper, using five different materials such as spiro-OMeTAD, Cu2O, CuSCN, NiO and CuI, as Hole Transporting Material (HTM). The analysis was carried out by means of the single and double-diode models of a solar cell and of genetic algorithms based on optimization technique, in order to extract the desired parameters. The minor degradation of J0 and Rs has been found for the condition offset equal to zero and for the highest doping level in p-type perovskite layer. Also, a comparison has been made of the behavior of two reverse saturation currents (J01 and J02). The power conversion efficiency (PCE) has shown to be more strongly dependent on J02 than on J01. Results obtained in this work can be used to improve the manufacturing process of these devices., This work was partially supported by the National Council Research (CONICET), Argentina, by the Universidad Nacional Arturo Jauretche, Argentina, by the Universidad Nacional de Quilmes, Argentina, by the Universidad Nacional de La Plata, Argentina and by the Ministerio de Economía y Competitividad (Grant ENE2016-77798-C4-2-R), Spain

[EN] In this paper, a theoretical study of different p-p-n perovskite solar cells has been performed by means of computer simulation. Effects of the offset level upon the power conversion efficiency (PCE) of these devices have been researched using five different materials such as spiro-OMeTAD, Cu2O, CuSCN, NiO and CuI, as Hole Transporting Layer (HTL). The Solar Cells Capacitance Simulator (SCAPS)-1D has been the tool used for numerical simulation of these devices. A strong dependence of PCE has been found with the difference between the Maximum of the Valence Band of the HTL and perovskite materials, and with the doping level in p-type perovskite layer. A minimum value of hole mobility in the HTL has been also found, below which the PCE is reduced. Efficiencies in the order of 28% have been obtained for the Cu2O/Perovskite/TiO2 solar cell. Results obtained in this work show the potentiality of this promising technology., This work was partially supported by the Universidad Nacional de Quilmes, Argentina, by the Universidad Nacional Arturo Jauretche, Argentina, by the Universidad Nacional de La Plata, Argentina, by the National Council Research (CONICET), Argentina, and by the Ministerio de Economia y Competitividad (Grant ENE2016-77798-C4-2-R), Spain.

The radiation resistance in InGaP/GaAs/Ge triple-junction solar cells is limited by that of the middle GaAs sub-cell. In this work, the electrical performance degradation of different GaAs sub-cells under 1 MeV electron irradiation at fluences below 4 × 1015 cm−2 has been analyzed by means of a computer simulation. The numerical simulations have been carried out using the onedimensional device modeling program PC1D. The effects of the base and emitter carrier concentrations of the p- and n-type GaAs structures on the maximum power point have been researched using a radiative recombination lifetime, a damage constant for the minority carrier lifetime and carrier removal rate models. An analytical model has been proposed, which is useful to either determine the maximum exposure time or select the appropriate device in order to ensure that the electrical parameters of different GaAs sub-cells will have a satisfactory response to radiation since they will be kept above 80% with respect to the non-irradiated values. Fil: Cappelletti, Marcelo Ángel. Universidad Nacional Arturo Jauretche; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata; Argentina. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia; Argentina Fil: Cedola, Ariel Pablo. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata; Argentina Fil: Peltzer y Blanca, Eitel Leopoldo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata; Argentina. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia; Argentina

The performance of crystalline silicon n + / p / p + and n / n / p + solar cells under AM0 spectrum,irradiated with 1 MeV electrons at fluences below 10 17 cm −2 has been analyzed by means ofcomputer simulation. The software used, fully developed by the authors, solves numerically inone dimension under steady-state conditions, the Poisson and continuity equationsself-consistently. The influence of constructive characteristics and different levels of hazardousenvironmental work conditions on the maximum power point of over 150 devices has beeninvestigated. The study has allowed the authors to propose a useful analytical model related tothe constructive characteristics of the device such as polarity, base resistivity and totalthickness, with the aim of examining the electrical performance of Si space solar cells. Resultspresented in this paper are important in order to contribute to the design of radiation-hardeneddevices. 1. Introduction Taking into account the urgent need to make the most ofalternative energy sources, the study of semiconductor devicesthatcanprovidepoweratlowoperatingcost,suchassolarcells,is extremely important at the present time. Deep studies aboutso-calledthirdgenerationsolarcells,focusedonnewmaterialsand technologies such as intermediate band, quantum dots andhot-carrier devices [1–4], are being carried out with the aimof reducing the cost and increasing the efficiency with respectto the first generation, i.e. crystalline silicon (c-Si) solar cells.However, in present times a considerable amount of researchin the field of the photovoltaic cells is still dominated by theconventional c-Si devices.For space power applications, where the devices areexposed to irradiation of high energy particles, multijunction(MJ) solar cells based on III–V technologies havedemonstrated higher conversion efficiencies and radiation-resistance than c-Si devices [5–7]. Nevertheless, c-Si solarcells have proven to offer a worthy operational reliability andcosteffectivenessasaspacepowersource[8–10]andthereforefurther research in this topic is still required.Every different solar cell structure from a given material,total thickness, base resistivity and polarity (p- or n-type),is expected to respond differently as a function of radiation.Therefore, each device must undergo some kind of irradiationtest to determine the degradation characteristics. Nowadays,precise techniques of modeling and simulation have becomefundamental tools to predict and to improve the responseof electronic devices under different operation conditions,offering valuable knowledge at a much lower cost and in lesstime than experimentation.In order to contribute to the design of radiation-hardeneddevices, this paper presents a theoretical study of the behaviorof different c-Si n

In this paper, a theoretical study of the electrical parameters degradation of different n-type GaAs sub-cells for InGaP/GaAs/Ge triple junction solar cells irradiated with 1 and 5 MeV electrons has been performed by means of computer simulation. Effects of base carrier concentration upon the maximum power point, short-circuit current, open circuit voltage, diffusion current, recombination current and series resistance of these devices have been researched using the displacement damage dose method, the one-dimensional PC1D device modeling program and a home-made numerical code based on genetic algorithms. The radiative recombination lifetime, damage constant for minority-carrier lifetime and carrier removal rate models for GaAs sub-cells have been used in the simulations. An analytical model has been proposed, which is useful to describe the radiation-induced degradation of diffusion current, recombination current and series resistance. Results obtained in this work can be used to predict the radiation resistance of solar cells over a wide range of energies. Fil: Cappelletti, Marcelo Ángel. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia. Grupo de Estudio de Materiales y Dispositivos Electrónicos; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata; Argentina. Universidad Nacional Arturo Jauretche; Argentina Fil: Casas, Guillermo. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia. Grupo de Estudio de Materiales y Dispositivos Electrónicos; Argentina. Universidad Nacional de Quilmes; Argentina Fil: Morales, Daniel Martin. Universidad Nacional Arturo Jauretche; Argentina Fil: Hasperué, Waldo. Universidad Nacional Arturo Jauretche; Argentina. Universidad Nacional de La Plata. Facultad de Informática. Instituto de Investigación en Informática Lidi; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata; Argentina Fil: Peltzer y Blanca, Eitel Leopoldo. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia. Grupo de Estudio de Materiales y Dispositivos Electrónicos; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata; Argentina

In the present work, the influence of deep-trap levels on the dark current of silicon PIN photodiodes under 1 MeV neutron radiation has been investigated by means of a complete numerical analysis. The computational code used for simulations, developed by the authors, numerically solves the coupled Poisson and continuity equations on a 2D domain to obtain the behavior of electronic devices. Recombination through deep levels in the bandgap is described by the Shockley–Read–Hall (SRH) theory. Defects caused by radiation are quantified in terms of the damage coefficient K for the minority carrier lifetime. The effects of the radiation studied are atomic displacement damages. Results corroborate that the dark current is strongly affected by energy levels close to the midgap. A relationship between the current damage rate and the trap level location in the silicon bandgap was obtained. A model to calculate the dark current of irradiated devices doped with deep impurities is presented. Simulations have allowed the comparison of radiation tolerances of undoped and gold-doped devices. The higher gold density has shown a marked improvement of the hardness of the devices to radiation effects.

A computer program for the simulation of semiconductor devices has been developed and applied to the analysis of radiation effects on Si PIN photodiodes. The study has allowed the authors to propose useful analytical models related to such optical and electrical device parameters as peak spectral response and dark current. Peak spectral response has shown a marked dependence on device layers dimensions. Dark current has demonstrated linear increase with intrinsic layer length and proton-radiation fluence. But the most important obtained result has been the determination of a particular set of semiconductor P-, I- and N-layer thicknesses, for given values of total device length and incident light intensity, that minimize radiation effects during photodiode operation in space environments up to high particle fluences.