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Your search keyword '"Vaz, V."' showing total 5 results
Start Over Author "Vaz, V." Topic condensed matter physics
5 results on '"Vaz, V."'

1. Temperature dependencies of frequency characteristics of HTSC RLC curcuit

Author

Vladimir M. Aroutiounian, V.V. Buniatyan, G.Sh. Shmavonyan, and Vaz. V. Buniatyan

Subjects
Superconductivity, Materials science, genetic structures, Condensed matter physics, General Physics and Astronomy, Surfaces and Interfaces, General Chemistry, Condensed Matter Physics, Series and parallel circuits, Signal, eye diseases, Surfaces, Coatings and Films, Inductance, Condensed Matter::Superconductivity, RLC circuit, sense organs, Thin film, Microwave, Electronic circuit
Abstract

Analytical expressions of temperature dependencies of magnitude–frequency and phase–frequency characteristics of a HTSC RLC parallel circuit are obtained, where the resistance and inductance are non-linearly depended on the optical signal modulated by the intensity. It is shown that the magnitude–frequency and phase–frequency characteristics of circuits can be controlled by choosing the parameters of the HTSC thin film and optical “pump”.

Published
2006

2. A new model of noise characteristics of SiC Schottky barrier MESFET with deep impurity levels and traps

Author

G.A. Avetisyan, Vaz. V. Buniatyan, Patrick Soukiassian, V.V. Buniatyan, and Vladimir M. Aroutiounian

Subjects
Materials science, business.industry, Band gap, Schottky barrier, General Physics and Astronomy, Surfaces and Interfaces, General Chemistry, Electron, Condensed Matter Physics, Surfaces, Coatings and Films, chemistry.chemical_compound, chemistry, Impurity, Silicon carbide, Optoelectronics, MESFET, Field-effect transistor, business, Noise (radio)
Abstract

Noise characteristics of silicon carbide Schottky barrier field effect transistors (MESFET) are examined for the case of the operation in small-signal regime and the presence of deep impurity levels and electron traps in the band gap of the channel. A new model of calculations of noise is suggested. It is shown that the noise measure of the short channel MESFET can be decreased within certain high frequency range.

Published
2006

3. Silicon carbide TUNNETT diodes

Author

Konstantinos Zekentes, Vladimir M. Aroutiounian, P Soukiassian, Vaz. V. Buniatyan, and N. Camara

Subjects
Range (particle radiation), Materials science, business.industry, Electrical engineering, Reactive components, Very high frequency, Transit time, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, chemistry.chemical_compound, chemistry, Materials Chemistry, Silicon carbide, Optoelectronics, Electrical and Electronic Engineering, business, Electrical impedance, Microwave, Diode
Abstract

The theoretical analysis of microwave characteristics of the n + p + ν n + TUNNETT diodes made of silicon carbide is carried out. The expressions for the impedance and its active and reactive components as well as expressions for the frequency range, where the negative differential resistance takes place, and the maximal frequency of oscillations are obtained for the TUNNETT diodes made of SiC. After numerical calculations, the conclusion is made that the performance potential of TUNNETTs is better than that of the other transit time devices in very high frequency range. The use of silicon carbide for the manufacture of TUNNETTs can promise better microwave parameters over the range of frequencies 100–500 GHz.

Published
2004

4. Theoretical Investigations of Microwave Characteristics of Tunnett Diodes Made of Silicon Carbide

Author

Vladimir M. Aroutiounian, Vaz. V. Buniatyan, Konstantinos Zekentes, Patrick Soukiassian, and Nicolas Camara

Subjects
Materials science, business.industry, Mechanical Engineering, Condensed Matter Physics, chemistry.chemical_compound, chemistry, Mechanics of Materials, Silicon carbide, Electronic engineering, Optoelectronics, General Materials Science, business, Microwave, Diode
Published
2004

5. Sensitivity of p–n junction based on SiC doped with deep impurity acceptor levels

Author

Patrick Soukiassian, V.V. Aroutiounian, F.V. Gasparyan, and Vaz. V. Buniatyan

Subjects
Photocurrent, Materials science, Physics::Instrumentation and Detectors, business.industry, Doping, Astrophysics::Instrumentation and Methods for Astrophysics, Wide-bandgap semiconductor, General Physics and Astronomy, Surfaces and Interfaces, General Chemistry, Condensed Matter Physics, Acceptor, Surfaces, Coatings and Films, Photodiode, law.invention, Condensed Matter::Materials Science, chemistry.chemical_compound, Optics, chemistry, law, Impurity, Silicon carbide, Optoelectronics, business, p–n junction
Abstract

The photoelectrical and spectral characteristics of silicon carbide photodiodes with the non-uniform distribution of doping impurities in the base are theoretically examined. The expressions are obtained for the average drift field, depletion-layer width and the normalized photocurrent. The short-wavelength photosensitivity of such drift photodiodes are calculated. It is shown that using internal drift field arises due to gradient of concentration of deep acceptor levels in the p-region it is possible to increase the short-wavelength sensitivity of SiC photodiodes.

Published
2001

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