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Combining topology and superconductivity provides a powerful tool for investigating fundamental physics as well as a route to fault-tolerant quantum computing. There is mounting evidence that the Fe-Based Superconductor FeTe$_{0.55}$Se$_{0.45}$ (FTS) may also be topologically non-trivial. Should the superconducting order be s$^{\pm}$, then FTS could be a higher order topological superconductor with Helical Hinge Zero Modes (HHZM).To test the presence of these modes we developed a new method for making normal metal/superconductor junctions via 2D atomic crystal heterostructures. As expected,junctions in contact with the hinge reveal a sharp zero-bias anomaly whose suppression with temperature and magnetic field only along the c-axis are completely consistent with the presence of HHZM. This feature is completely absent when tunneling purely into the c-axis, and its characteristics are also inconsistent with other origins of zero bias anomalies. Furthermore, additional measurements with soft-point contacts in bulk samples with various Fe interstitial contents demonstrate the intrinsic nature of the observed mode. Thus we provide evidence that FTS is indeed a higher order topological superconductor as well as a new method for probing 2D atomic crystals.

Domain walls separating regions of AB and BA interlayer stacking in bilayer graphene have attracted attention as novel examples of structural solitons, topological electronic boundaries, and nanoscale plasmonic scatterers. We show that strong coupling of domain walls to surface plasmons observed in infrared nanoimaging experiments is due to topological chiral modes confined to the walls. The optical transitions among these chiral modes and the band continua enhance the local ac conductivity, which leads to plasmon reflection by the domain walls. The imaging reveals two kinds of plasmonic standing-wave interference patterns, which we attribute to shear and tensile domain walls. We compute the electronic structure of both wall varieties and show that the tensile wall contain additional confined bands which produce a structure-specific contrast of the local conductivity. The calculated plasmonic interference profiles are in quantitative agreement with our experiments., Comment: 14 pages, 5 figures

Recently there has been reinvigorated interest in the superconducting proximity effect, driven by predictions of the emergence of Majorana fermions. To help guide this search, we have developed a phenomenological model for the tunneling spectra in anisotropic superconductor-normal metal proximity devices. We combine successful approaches used in s-wave proximity and standard d-wave tunneling to reproduce tunneling spectra in d-wave proximity devices, and clarify the origin of various features. Different variations of the pair potential are considered, resulting from the proximity-induced superconductivity. Furthermore, the effective pair potential felt by the quasiparticles is momentum-dependent in contrast to s-wave superconductors. The probabilities of reflection and transmission are calculated by solving the Bogoliubov equations. Our results are consistent with experimental observations of the unconventional proximity effect and provide important experimental parameters such as the size and length scale of the proximity induced gap, as well as the conditions needed to observe the reduced and full superconducting gaps., 12 pages, 4 figures

Transition metal dichalcogenides in the class MX_{2} (M=Mo, W; X=S, Se) have been identified as direct-gap semiconductors in the monolayer limit. Here, we examine light emission of monolayer WSe_{2} using temperature-dependent photoluminescence and time-resolved photoluminescence spectroscopy. We present experimental evidence for the existence of an optically forbidden dark state of the band-gap exciton that lies tens of meV below the optically bright state. The presence of the dark state is manifest in the strong quenching of light emission observed at reduced temperatures. The experimental findings are consistent with theoretical predictions of spin-polarized conduction and valence bands at the K point of the Brillouin zone, with the minimum gap occurring between bands of opposite electron spin.

High-temperature superconductors exhibit a wide variety of novel excitations. If contacted with a topological insulator, the lifting of spin rotation symmetry in the surface states can lead to the emergence of unconventional superconductivity and novel particles. In pursuit of this possibility, we fabricated high critical-temperature $({T}_{c}\ensuremath{\sim}85\phantom{\rule{0.28em}{0ex}}\mathrm{K})$ superconductor/topological insulator (${\mathrm{Bi}}_{2}{\mathrm{Sr}}_{2}{\mathrm{CaCu}}_{2}{\mathrm{O}}_{8+\ensuremath{\delta}}/{\mathrm{Bi}}_{2}{\mathrm{Te}}_{2}\mathrm{Se}$) junctions. Below 75 K, a zero-bias conductance peak (ZBCP) emerges in the differential conductance spectra of this junction. The magnitude of the ZBCP is suppressed at the same rate for magnetic fields applied parallel or perpendicular to the junction. Furthermore, it can still be observed and does not split up to at least 8.5 T. The temperature and magnetic field dependence of the excitation we observe appears to fall outside the known paradigms for a ZBCP.

Interest in the superconducting proximity effect has been reinvigorated recently by novel optoelectronic applications as well as by the possible emergence of the elusive Majorana fermion at the interface between topological insulators and superconductors. Here we produce high-temperature superconductivity in Bi(2)Se(3) and Bi(2)Te(3) via proximity to Bi(2)Sr(2)CaCu(2)O(8+δ), to access higher temperature and energy scales for this phenomenon. This was achieved by a new mechanical bonding technique that we developed, enabling the fabrication of high-quality junctions between materials, unobtainable by conventional approaches. We observe proximity-induced superconductivity in Bi(2)Se(3) and Bi(2)Te(3) persisting up to at least 80 K-a temperature an order of magnitude higher than any previous observations. Moreover, the induced superconducting gap in our devices reaches values of 10 mV, significantly enhancing the relevant energy scales. Our results open new directions for fundamental studies in condensed matter physics and enable a wide range of applications in spintronics and quantum computing.

Nearly nanometer-thick cuprates are an appealing platform for devices as well as exploring the roles of dimensionality, disorder, and free carrier density in these compounds. To this end we have produced exfoliated crystals of ${\text{Bi}}_{2}{\text{Sr}}_{2}{\text{Dy}}_{x}{\text{Ca}}_{1\ensuremath{-}x}{\text{Cu}}_{2}{\text{O}}_{8+\ensuremath{\delta}}$ on oxidized silicon substrates. The exfoliated crystals were characterized via atomic force and polarized Raman microscopies. Proper procedures for production, handling, and monitoring of these thin oxides are described. We observe a significant change in the effective exchange constant $J$ of these exfoliated crystals.