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Although theoretical investigations indicate that the successful combination of graphene and diamond would give interesting properties, only a limited number of reports dealing with the subject have been published. Here, we present a rapid thermal process (RTP) which involves Ni as metal catalyst for a direct growth of graphene on diamond at a temperature of 800 $^{\circ}$C for 1 min. This process operates with a combination of a lower temperature and for a shorter duration than what has previously been reported. Thin Ni films with different thicknesses were deposited on top of (100) single crystalline diamond. After RTP, the coverage of monolayer graphene was found to be around 20% shown by the intensity ratio between the 2D- and G peak using Raman spectroscopy on 50-nm thick Ni films. In addition, x-ray photoelectron spectroscopy and atomic force microscopy analysis were conducted for additional investigation. For electrical characterization, Hall-effect measurements were performed at temperatures between 80 and 360 K.

The preparation of ohmic contact with high stability and low resistance is critical, and the quality of ohmic contact will directly affect the performance of devices as the efficiency, gain and switching speed. In this work, the I-V characteristic of the 4H-SiC devices under rapid thermal annealing and pulsed laser annealing were compared, the pulsed laser annealing process could obtain the lower ohmic contact resistant. The surface morphology, material composition, and elemental analysis were clarified by optical microscopy (OM), X-ray diffraction (XRD) and Energy Dispersive Spectroscopy (EDS), respectively. This research suggests that more Ni2Si and carbon vacancy can form at the interface under pulsed laser annealing.

The purpose of this work is to study the effect of rapid thermal annealing (RTA) with halogen lamps on the structural and phase characteristics of lead zirconate-titanate (PZT) films. The PZT thin ...

This paper presents surface photovoltage (SPV) applications for the monitoring of chemical cleaning and purity of chemicals through mapping of minority carrier diffusion length, Fe concentration in the bulk, and surface contamination (surface charge and surface recombination). The noncontact, wafer-scale character of the new SPV approach and refined apparatus make this technique uniquely suited for heavy metal monitoring. This method was used to monitor Cu contamination in BHF by measurement of its effect on surface recombination and Fe contamination through it effect on bulk recombination after the rapid thermal annealing step used to drive Fe deposited at the surface during cleaning into the bulk

As-grown Ar-deposited Cd1−xVxO and Ar/O2-deposited Cd1−yVyO feature lower and higher electron concentrations than 4 × 1020 cm−3, respectively. After isothermal and isochronal annealing under N2 ambient, we find that the two series exhibit a decrease or increase in electron concentrations until ~4 × 1020 cm−3 which is close to Fermi stabilization energy (EFS) level of CdO, with the assistance of native defects. An amphoteric defects model is used to explain the changing trends in electron concentrations. The tendencies in mobility further confirm our results. This work may provide some strategies to predict the electrical properties in CdO.

The photoluminescence spectra of epitaxial n+-Ge:P/Si(001) structures are studied. The structures are grown by hot-wire chemical vapor deposition and doped with phosphorus to the maximum electron concentration 1 × 1020 cm–3 from a source based on thermally decomposed GaP. The effects of the doping level and rapid thermal annealing of n+-Ge:P layers on the photoluminescence spectra are studied. It is demonstrated that the epitaxial n+-Ge:P/Si(001) layers grown by hot-wire chemical vapor deposition are promising for application as active regions of light-emitting optoelectronic devices operating in the near-infrared spectral region.

International audience; P-doped 6H-SiC substrates were implanted with Fe ions. During implantation the samples were maintained at 550 °C with energies ranging from 30 to 160 keV in order to produce a diluted magnetic semiconductor (DMS) with a 2% Fe homogeneous concentration to a depth of about 100 nm thickness. The effects of rapid thermal annealing on the microstructure were examined by atom probe tomography (APT). The study shows evidence of the formation of Fe rich nanoclusters after annealing which contain core magnetic phases that contribute to the magnetic properties.

This article studied the performances of 10 nm and 20 nm ZrO2 dielectric metal–insulator–metal (MIM) capacitors before and after rapid thermal annealing (RTA). The annealing condition was 4...

In this work, the effects of rapid thermal annealing on the electrical and structural properties of Mo/SiC Schottky contacts which fabricated by FTS system were investigated. As-fabricated Mo/SiC S...

Rapid thermal annealing is an effective way to improve the optical properties of semiconductor materials and devices. In this paper, the emission characteristics of GaAs0.92Sb0.08/Al0.3Ga0.7As multiple quantum wells, which investigated by temperature-dependent photoluminescence, are adjusted through strain and interfacial diffusion via rapid thermal annealing. The light-hole (LH) exciton emission and the heavy-hole (HH) exciton emission are observed at room temperature. After annealing, the LH and HH emission peaks have blue shift. It can be ascribed to the variation of interfacial strain at low annealing temperature and the interfacial diffusion between barrier layer and well layer at high annealing temperature. This work is of great significance for emission adjustment of strained multiple quantum wells.

In this work, we evaluate the effect of the novel symmetric multicycle rapid thermal annealing (SMRTA) process on both Mg ion implanted and non-implanted thick unintentionally doped GaN drift layers for vertical power devices. The typical p-type behavior and restoration of implant damage are observed in implanted samples, but on non-implanted samples a reduction in background carrier concentration and associated reduction in leakage current and increase in breakdown voltage is observed. This indicates that the capping/annealing process itself is not detrimental to the crystal, and the annihilation of native point defects in the process has beneficial effects for device structures.

We studied how rapid thermal annealing (RTA) affects bulk micro-defects (BMDs) and plastic deformation in Si wafers processed at high temperatures. BMDs caused by oxygen precipitation at 1200 °C were investigated in Si wafers as a function of annealing time with and without RTA and pre-annealing. Only the pre-annealed RTA wafer revealed an average BMD size of ~50 nm after annealing at 800 °C for 2 h and subsequently at 1000 °C for 4 h, and such wafers retained BMDs after annealing at 1200 °C for 500 min. The relationship between BMDs and plastic deformation was investigated for Si wafers subjected to RTA at various temperatures. Dislocations were generated and propagated after the simulated CMOS heat treatment as RTA temperature increased because of the low dislocation pinning effect produced by the reduction in residual oxygen while precipitated oxygen concentration increased. Incident angle deviation in the rocking curve indicated a high degree of plastic deformation caused by high RTA temperature after performing a realistic device fabrication process. We propose that a combination of RTA and a pre-annealing process can improve the internal gettering efficiency during high temperature processing, which controls BMDs. This would balance the residual oxygen and preventing plastic deformation.

In this paper, samples were prepared by co-implanting Dy and carbon ions into c-plane (0001) GaN films and a subsequent rapid thermal annealing at 800 °C. The room temperature magnetic properties of Dy and C co-implanted GaN samples were investigated by experiments and theoretical calculations. Dy and C co-implanted GaN samples had the larger room temperature magnetic moment than that of the Dy-implanted GaN. The calculated results showed that the spin polarization of C-2p electrons leads to the local magnetic moment due to the hybridization between Dy-4f electron states and C-2p electron, which explains the enhancement of magnetic moment in co-implanted GaN samples. Our results suggest that co-implantation is a potential approach to enhance the room temperature ferromagnetism.

The disorder-order phase transition of FePt/SiO2 core/shell nanoparticles (NPs) induced by rapid thermal annealing was investigated. The FePt/SiO2 NPs were synthesized using FePt cores as seeds. For as-prepared FePt/SiO2 NPs, the average size of the FePt core and the thickness of the SiO2 shell are about 4.8 and 1.2 nm respectively, and the FePt NPs exhibit a disordered fcc structure. The FePt core NPs show obvious phase transformation from a disordered to an ordered structure after they were annealed at 600 °C for 2 min. Moreover, increasing annealing time can promote effectively the formation of the ordered fct-FePt phase. The relatively large coercivity $H_{\mathrm {c}}$ is obtained for FePt NPs with a thicker SiO2 shell. The $H_{\mathrm {c}}$ decreases firstly with decreasing temperature from 300 to 100 K and then increases from 100 to 10 K, which is ascribed to the coexistence of magnetically hard fct-FePt and magnetically soft fcc-FePt in the sample, and the incomplete exchange coupling between the hard and soft magnetic phases.

The effects of rapid thermal annealing (RTA) on the optical properties of GaNAs/GaAs multiple quantum wells (MQWs) grown by chemical beam epitaxy (CBE) are studied by photoluminescence (PL) at 77 K. The results show that the optical quality of the MQWs improves significantly after RTA. With increasing RTA temperature, PL peak energy of the MQWs redshifts below 1023 K, while it blueshifts above 1023 K. Two competitive processes which occur simultaneously during RTA result in redshift at low temperature and blueshift at high temperature. It is also found that PL peak energy shift can be explained neither by nitrogen diffusion out of quantum wells nor by nitrogen reorganization inside quantum wells. PL peak energy shift can be quantitatively explained by a modified recombination coupling model in which redshift nonradiative recombination and blueshift nonradiative recombination coexist. The results obtained have significant implication on the growth and RTA of GaNAs material for high performance optoelectronic device application.

TiO2/p-Si paste heterojunction structure, which showed photovoltaic characteristics, was successfully fabricated by rapid thermal annealing (RTA). To reduce the oxidation of Si paste during the RTA, Ti was sputtered on the p-type Si paste. It was found that the RTA condition of 1200 °C/2 s enabled the Si paste to achieve the lowest oxidation and the best crystallization conditions, as well as the transformation of the Ti layer into the rutile TiO2 phase. It was observed that some molten Si grain lumps appeared on the surface of the sample annealed at 1200 °C for 2 s. This phenomenon was due to the melting process of the surface Si particles promoted by the Ti layer. Typical rectifying characteristics and photocurrent density of 36 μA/cm2 under AM1.5 were observed with the TiO2/p-Si paste heterojunction device annealed at 1200 °C for 2 s. This study shows an application potential of Si paste films for such devices as future solar cell.

Anisotropic nanomaterial-modified carbon fibers attract increasing attention because of their superior properties over traditional ones. In this study, activated carbon fibers (ACFs) “thickly overgrown” by Ag nanohair were prepared through self-assembly and rapid thermal annealing. Viscose fibers with well-dispersed silver nanoparticles (AgNPs) on surfaces were first prepared through self-assembly of hyperbranched poly(amino-amine) (HBPAA)-capped AgNPs on viscose surfaces. HBPAA endowed the AgNP surfaces with negative charges and abundant amino groups, allowing AgNPs to monodispersively self-assemble to fiber surfaces. Ag nanohair-grown ACFs were prepared by sequential pre-oxidation and carbonization. Because the carbonization furnace was open-ended, ACFs are immediately transferrable to the outside of the furnace. Therefore, the Ag liquid adsorbed by ACF pores squeezed out to form Ag nanowires through thermal contraction. FESEM characterization indicated that Ag nanohairs stood on ACF surface and grew from ACF caps. XPS and XRD characterization showed that Ag successfully assembled to fiber surfaces and retained its metallic state even after high-temperature carbonization. TG analysis suggested that Ag nanohair-grown ACFs maintained their excellent thermal stabilities. Finally, the fabricated ACFs showed excellent and durable antibacterial activities, and the developed method may provide a potential strategy for preparing metal nanowire-grown ACFs.

High uniformity Au-catalyzed indium selenide (In2Se3) nanowires are grown with the rapid thermal annealing (RTA) treatment via the vapor-liquid-solid (VLS) mechanism. The diameters of Au-catalyzed In2Se3 nanowires could be controlled with varied thicknesses of Au films, and the uniformity of nanowires is improved via a fast pre-annealing rate, 100 °C/s. Comparing with the slower heating rate, 0.1 °C/s, the average diameters and distributions (standard deviation, SD) of In2Se3 nanowires with and without the RTA process are 97.14 ± 22.95 nm (23.63%) and 119.06 ± 48.75 nm (40.95%), respectively. The in situ annealing TEM is used to study the effect of heating rate on the formation of Au nanoparticles from the as-deposited Au film. The results demonstrate that the average diameters and distributions of Au nanoparticles with and without the RTA process are 19.84 ± 5.96 nm (30.00%) and about 22.06 ± 9.00 nm (40.80%), respectively. It proves that the diameter size, distribution, and uniformity of Au-catalyzed In2Se3 nanowires are reduced and improved via the RTA pre-treated. The systemic study could help to control the size distribution of other nanomaterials through tuning the annealing rate, temperatures of precursor, and growth substrate to control the size distribution of other nanomaterials. Graphical Abstract Rapid thermal annealing (RTA) process proved that it can uniform the size distribution of Au nanoparticles, and then it can be used to grow the high uniformity Au-catalyzed In2Se3 nanowires via the vapor-liquid-solid (VLS) mechanism. Comparing with the general growth condition, the heating rate is slow, 0.1 °C/s, and the growth temperature is a relatively high growth temperature, > 650 °C. RTA pre-treated growth substrate can form smaller and uniform Au nanoparticles to react with the In2Se3 vapor and produce the high uniformity In2Se3 nanowires. The in situ annealing TEM is used to realize the effect of heating rate on Au nanoparticle formation from the as-deposited Au film. The byproduct of self-catalyzed In2Se3 nanoplates can be inhibited by lowering the precursors and growth temperatures.

This paper presents intentional doping of n - and p -type GaAs 0.19 P 0.76 N 0.05 alloys by molecular beam epitaxy, followed by rapid thermal annealing (RTA). Sulfur and magnesium were respectively used as n - and p -type dopants. The carrier concentrations were controllable between 10 17 and 10 19 cm −3 by adjusting the dopant cell temperature. It was revealed that Hall mobility of the n -type GaAsPN alloys was increased by the RTA process compared to as-grown ones, whereas no significant difference was apparent in the p -type alloys. It is believed that improvement of the conduction band spatial uniformity was mainly responsible for the Hall mobility increase of the n -type GaAsPN alloys by RTA. Finally, a p-i-n GaAsPN diode structure was grown on n -type GaP substrates. A current-voltage characteristic showed a typical rectifying curve with a built-in voltage of 1.8 V and an ideality factor of 1.45. The reverse saturation current was estimated to be less than 10 nA/cm 2 .

The transformation of cupric oxide (CuO) into cuprous oxide (Cu2O) thin films by rapid thermal annealing (RTA) treatments is studied. The CuO films were obtained by dip-coating from a precursor solution containing copper (II) acetate. The films are formed of ten coats, where each one was deposited with a withdrawal speed of 8 cm/min and dried in air at 250 °C for 5 min; after that, the films were sintered in air at 250 °C for 1 h. Under these conditions an average thickness of 240 nm is obtained. The RTA treatments on the CuO films were performed for 10 s with a heating ramp of 5 °C/s in vacuum at temperatures (TA) in the 325–450 °C range with steps of 25 °C. As revealed by X-ray diffraction data, the composition of the polycrystalline films depends upon the applied TA: i) CuO+Cu2O for TA

Ultrathin hydrogenated amorphous carbon (a-C:H) films deposited by plasma-enhanced chemical vapor deposition (PECVD) and hydrogen-free amorphous carbon (a-C) films of similar thickness deposited by...

Using ZnO as a model system, the densification mechanisms of flash sintering are investigated. Controlled experiments via limiting the maximum current or the effective ramp rate suggest that both the maximum specimen temperature and the high heating rate (on the order of 200 °C/s) are essential for the rapid densification during the flash sintering. Moreover, benchmarking rapid thermal annealing (RTA) experiments, which were conducted to mimic the heating profiles in the flash sintering, achieved similar densification and grain growth rates with comparable heating profiles, attesting that the ultrafast densification is mainly enabled/determined by the T ( t ) profile. The combination of these experiments suggest that, at least for ZnO, the rapid heating profile is a key factor for the observed rapid densification in flash sintering, while various electric field/current effects could also exist. A clear and consistent correlation between the grain sizes and relative densities is also evident for specimens made by both flash sintering and RTA with different conditions, suggesting the same conventional grain growth mechanism in both cases under the current experimental conditions.

A study of the polycrystalline silicon depletion effect generated from the subsequent thermal process is undertaken. Although phosphorus out-diffusion, which causes the polycrystalline silicon depletion effect, is increased with an increase in the thermal process temperature, the polysilicon depletion effect is stronger when inducing rapid thermal annealing in lower temperatures of 600–800 °C than in 900 °C. This indicates that the major reason for the polysilicon depletion effect is not the out-diffusion of phosphorus but the electrical deactivation of phosphorus, which is segregated at the grain boundary. Therefore, by increasing the size of polycrystalline silicon grain, we can efficiently reduce the polysilicon depletion effect and enhance the tolerance to deactivation.

In this work, we explored a novel technique for the formation of ultra-shallow p+/n and n+/p junctions on Ge substrate using the spin-on dopant (SOD) followed by laser annealing (LA). The junction depth and doping profiles were extracted and compared between Ge junctions activated by LA and by the conventional rapid thermal annealing (RTA). It is experimentally confirmed that the process of SOD followed by LA method outperformed that by RTA technique in terms of the ultra-shallow junction depth, higher surface doping concentration and steeper doping profiles. Therefore, the high performance Ge p+/n and n+/p junctions fabricated by SOD followed by LA method exhibit suppressed junction leakage current and raised on/off ratios, making this novel technique a promising way for source/drain formation in future technology nodes.

In this work, an effective strategy for the controlled synthesis of Si-QDs embedded Si-rich silicon oxide/SiO2 (SRO/SiO2) multilayers using susceptor-assisted microwave annealing (MWA) is introduced. Both MWA and rapid thermal annealing (RTA) were compared to study the growth of Si-QDs embedded in SRO/SiO2 multilayers, and found that the temperature required for forming Si-QDs decreases by 200 °C under MWA. SRO single-layer films were used for the investigation of growth mechanism during MWA. It is shown that MWA annealing could enhance the phase separation in SRO films and more Si-QDs precipitated in SRO film annealed by MWA than RTA one. These results demonstrate that the microwave electromagnetic field has unique influence on the generated Si-QDs, can be considered as an archetype of a non-thermal microwave effect.

Bi3.15Nd0.85Ti3O12 (BNdT) films were deposited on Pt/Ti/SiO2/Si(100) substrates by a metal organic decomposition (MOD) method, and annealed by a rapid thermal annealing process in oxygen atmosphere and in air, respectively. The crystalline structures and morphologies of BNdT films were characterized by X-ray diffraction and field-emission scanning electron microscopy, and the gas sensing properties were measured by monitoring its resistance at different gas concentrations. The results indicate that the BNdT films annealed in air are of porous microstructure and rough surface, and the annealing atmosphere has great influence on gas sensing properties. At an operating temperature of 100 °C, the BNdT films annealed in air are of high response value to 1×10−6 gaseous ethanol, and the detecting limit is as low as 0.1×10−6. The corresponding response and recovery time is about 10 and 6 s, respectively. The results can offer useful guidelines for fabricating high performance ethanol sensors.

In this work, the electrical properties of Al2O3 films deposited by reactive ion sputtering were investigated by means of morphological, chemical and electrical characterizations. We observe that the electron trapping affecting the insulating layer is mitigated after a rapid thermal annealing (RTA) treatment. The RTA improved also the permittivity (up to 6 epsilon(0)), although the negative fixed charge remains in the order of 10(12) cm(-2). However, the temperature dependent electrical investigation of the metal-oxide-semiconductor (MOS) capacitors demonstrates that the room temperature Fowler-Nordheim electron barrier height of 2.37 eV lies between the values expected for SiO2/4H-SiC and Al2O3/4H-SiC systems.

Cd2SnO4/CdS/CdTe/CuxTe/Au structure solar cells were made in samples of 20 × 20 mm2. Multiple metallic back-contacts were deposited on each sample by thermal evaporation. A series of rapid thermal annealing treatments (RTA) were performed on the cells, controlling work pressure (Pw) and temperature (Ta), to activate the interface of CdTe-back contact. Several combinations of pressure (746 mbar ≤ Pw ≤ 1112 mbar) and temperature (180 °C ≤ Ta ≤ 260 °C) were studied. The best results were obtained for the lowest Pw, increasing the average efficiency from 6.9% to 9.8% as Ta increased. All photovoltaic parameters (VOC, JSC, FF, RS, and RSh) were enhanced with the RTA treatments along with the dispersion values. Once the thermal activation's optimal conditions were determined, the highest efficiency was 11.3% with an RTA single treatment. The improvement is attributed to the formation of Cu1·85Te phase. It is shown that this kind of thermal treatment on CuxTe/Au back-contact of the cells can be employed to obtain higher area solar cells.

Strain technology has been widely employed to enhance the performance of MOSFETs. Recently, it has been desired that Sn as a stressor, is implanted into channel region in MOSFETs for compressive strain introduction since Sn can induce lager compressive strain than Ge. In this study, evaluation of strain in Si layers annealed with laser or rapid thermal annealing (RTA) after Ge and Sn ion implantation was carried out. As a result, a SiGeSn layer was formed only after the RTA for the Sn-implanted SiGe. Furthermore, it was confirmed the induced strain for the Sn-implanted SiGe after the RTA was more compressive than that for the Sn-implanted SiGe after the laser-annealing, resulting in the lower sheet resistance for the Sn-implanted SiGe after the RTA than that for the Sn-implanted SiGe after the laser-annealing.

In this paper, we present a novel method for graphene nanoribbons formation using nickel nanowires as templates. Modification of electrochemical procedure for nickel nanowires synthesis was introduced by implementing graphene quantum dots as a carbon source. Thus, nickel nanowires with graphene quantum dots were prepared. These wires were exposed to rapid thermal annealing at high temperatures (500 degrees C, 700 degrees C and 800 degrees C). During this process carbon atoms dissolve in metal and precipitate to the nickel surface forming nickel-carbon nanowires. Atomic force microscopy, scanning electron microscopy and Raman spectroscopy were characterization methods used for analysis of changes in nickel-carbon nanowires properties depending on the different annealing temperatures. After etching nickel with nitric acid, graphene nanoribbons with average diameters of 32 nm and average lengths of 4 mu m were obtained. (C) 2016 Elsevier B.V. All rights reserved.

We report a method to induce defects on the surface of single-walled carbon nanotubes (SWNTs) in order to improve the gas-sensing properties of an SWNT-based sensor. In this approach, the surface of the SWNTs is physically modified by thermal treatment at high temperature. The fabricated SWNT-based sensors were subjected to rapid thermal annealing (RTA) over the temperature range of 300–800 °C. After the thermal treatment, the electrical resistances of the defect-induced SWNT sensors were measured and compared with those of pristine SWNT sensors. The gas sensing properties of the defect-induced SWNT sensors upon exposure to various gases such as NO 2 , NH 3 , and H 2 were measured at room temperature. The thermally treated SWNT-based sensors exhibited much higher sensitivity and recovery than the pristine sensors. These results indicate that the defect-induced SWNTs can improve the performance of SWNT-based sensors.

The effect of rapid thermal annealing on the oxide charge distribution of Al/HfO$$_2$$2/SiO$$_2$$2/Si metal---oxide---semiconductor structures are studied using technology computer-aided design (TCAD) simulations and experiments. The simulated electrical characteristics are compared with experimentally obtained data. The interface traps are found to be nonuniform in nature and laterally distributed following a Gaussian profile. The distribution of interface trap charges arises because of spatial electric field variation in the oxide film upon gate bias application. The interface trap density is found to decrease with increase in annealing temperature. It is further observed that, at higher annealing temperature, the fixed oxide charge density increases due to interfacial Hf silicate formation.

Ta/PrFeB/Ta thin films were deposited on CORNING 7059 by sputtering technique followed by rapid thermal annealing (RTA). The thickness of PrFeB was kept constant at 50 nm. The role of annealing temperature from 450 to 700 °C in a step of 50 °C for constant heating time of 60 s on the structural and magnetic consequences of thin films was studied by means of X-ray diffraction, field emission scanning electron microscopy, atomic force microscopy and vibrating sample magnetometer. The (00l) texture was almost fully developed at temperature of 650 °C and with an increase in temperature up to 700 °C the (105) peaks was also appeared in the patterns. The grains size and surface roughness of PrFeB films were increased by an increase in temperature. It was found that with an increase in temperature up to 500 °C the coercivity was developed and enhanced to 0.75 MA/m by further increasing of temperature to 650 °C. The maximum remanent-magnetization ratio and coercivity were obtained at temperature of 650 °C. The magnetization reversal process is accompanied by the combination of domain wall motion (DWM) and Stoner–Wohlfarth (S–W) rotation. However, for PrFeB films annealed at 550–700 °C it is closer to the S–W model than DWM modes.

Effect of rapid thermal annealing (RTA) on the crystallographic orientation and magnetic properties in single-layered FePt and FePd films has been characterized. A huge biaxial tensile stress of ∼2 GPa was induced in the L 1 0 -FePt thin films after an RTA of 800 °C, which resulted in a significant orientation transition from (111) to (001) texture. On the other hand, in case of the FePd films, only a small in-plane tensile stress (∼0.5 GPa) was accumulated, which caused that the orientation barely changed from a (111) texture to isotropic state. These results suggest that the high ordering temperature and low tensile stress were the likely reasons why RTA has no effect on texture formation of the FePd films.

Phosphorus that had been implanted into silicon-on-insulator (SOI) substrates was activated using different annealing techniques to investigate phosphorus deactivation at low temperatures. A combination of amorphization and excimer laser annealing (ELA) greatly enhanced phosphorus activation. However, heavy doping with phosphorus reduced the thickness of the amorphous layer. Furnace annealing at 350 °C following ELA induced significant deactivation and the deactivation behavior was similar to that following rapid thermal annealing (RTA). The temperature-dependence of phosphorus deactivation in samples that were implanted with a dose of 5×10 16 cm −2 showed a transition at 400 °C. The deactivation behavior was more sensitive to temperature below 400 °C than above it. Samples with an implantation dose of 5×10 15 cm −2 exhibited only a weak temperature-dependence of deactivation at temperatures above 400 °C, implying that the transition of temperature-dependence is caused by the change of the deactivation mechanism with the phosphorus activation level.

cited By 0; International audience; 2-layer laminated sheets (PE/18-8) with Polyethylene (PE) and austenitic 18-8 stainless steels (18-8) were prepared by a new adhesion method, a double-step treatment consisting of applying low dose (ℜ 0.43MGy) homogeneous low energy electron beam irradiation (HLEBI) prior to hot-press under 5MPa and 343 K. Although the weak hot-press adhesion of the PE/18-8 was observed without HLEBI, the new adhesion raised the bonding forces as evidenced by the mean adhesive forces of peeling resistance (oFp). Based on the 3-parameter Weibull equation, the lowest oFp value at peeling probability (Pp) of zero (Fs) could be estimated. An increasing trend in Fs occurred by the double-step treatment applying HLEBI up to 0.30MGy reaching a maximum at 0.85Nm-1, improving the safety level without radiation damage. When HLEBI cut the chemical bonds in PE polymer and generated terminated atoms with dangling bonds, they probably induced the chemical bonding. Therefore, increasing adhesion force between the laminated sheets could be explained. © 2016 The Japan Institute of Metals and Materials.