1. Deep-level noise characterization of MOVPE-grown β-Ga2O3.
- Author
-
Golz, Christian, Galazka, Zbigniew, Popp, Andreas, Anooz, Saud Bin, Wagner, Guenter, Hatami, Fariba, and Masselink, W. Ted
- Subjects
PINK noise ,NOISE ,CONDUCTION bands ,ACTIVATION energy ,UNDERWATER noise ,ENERGY density - Abstract
We measure the low-frequency noise in epitaxial β-Ga
2 O3 grown by MOVPE. Both 1/f and generation-recombination noise components are well resolved. The Hooge parameters characterizing the 1/f noise are 3 × 10–4 at room temperature and 2 × 10–5 at temperatures near 200 K. Mid bandgap trap states result in generation-recombination noise that is analyzed using temperature dependent low-frequency deep-level noise spectroscopy. Trap levels with energies of 165, 127, and 37 meV below the conduction band minimum are characterized in terms of density and activation energy. [ABSTRACT FROM AUTHOR]- Published
- 2019
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