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Current organic semiconductors for organic photovoltaics (OPV) have relative dielectric constants (relative permittivities, εr) in the range of 2-4. As a consequence, Coulombically bound electron-hole pairs (excitons) are produced upon absorption of light, giving rise to limited power conversion efficiencies. We introduce a strategy to enhance εr of well-known donors and acceptors without breaking conjugation, degrading charge carrier mobility or altering the transport gap. The ability of ethylene glycol (EG) repeating units to rapidly reorient their dipoles with the charge redistributions in the environment was proven via density functional theory (DFT) calculations. Fullerene derivatives functionalized with triethylene glycol side chains were studied for the enhancement of εr together with poly( p-phenylene vinylene) and diketopyrrolopyrrole based polymers functionalized with similar side chains. The polymers showed a doubling of εr with respect to their reference polymers in identical backbone. Fullerene derivatives presented enhancements up to 6 compared with phenyl-C61-butyric acid methyl ester (PCBM) as the reference. Importantly, the applied modifications did not affect the mobility of electrons and holes and provided excellent solubility in common organic solvents. [ABSTRACT FROM AUTHOR]

The influence of the interface of the dielectric SiO2 on the performance of bottom-contact, bottom-gate poly(3-alkylthiophene) (P3 AT) field-effect transistors (FETs) is investigated. In particular, the operation of transistors where the active polythiophene layer is directly spin-coated from chlorobenzene (CB) onto the bare SiO2 dielectric is compared to those where the active layer is first spin-coated then laminated via a wet transfer process such that the film/air interface of this film contacts the SiO2 surface. While an apparent alkyl side-chain length dependent mobility is observed for films directly spin-coated onto the SiO2 dielectric (with mobilities of ≈10−3 cm2 V−1 s−1 or less) for laminated films mobilities of 0.14 ± 0.03 cm2 V−1 s−1 independent of alkyl chain length are recorded. Surface-sensitive near edge X-ray absorption fine structure (NEXAFS) spectroscopy measurements indicate a strong out-of-plane orientation of the polymer backbone at the original air/film interface while much lower average tilt angles of the polymer backbone are observed at the SiO2/film interface. A comparison with NEXAFS on crystalline P3 AT nanofibers, as well as molecular mechanics and electronic structure calculations on ideal P3 AT crystals suggest a close to crystalline polymer organization at the P3 AT/air interface of films from CB. These results emphasize the negative influence of wrongly oriented polymer on charge carrier mobility and highlight the potential of the polymer/air interface in achieving excellent 'out-of-plane' orientation and high FET mobilities. [ABSTRACT FROM AUTHOR]