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In this paper, we propose to monitor the thermal parameters of insulated gate bipolar transistor (IGBT) module using the case temperature. This method works during the shutoff period of IGBT module where the case temperature is in the cooling phase By establishing the relationship between the Cauer-type thermal RC parameters and the time constants of case temperature cooling curves, thermal parameters of the IGBT module can be identified. The proposed method is able to eliminate the influence of thermal interface material (TIM) degradation on the monitored results, which is quite challenging for the current case temperature monitoring methods. Moreover, it enables the detection of thermal resistance and thermal capacitance of the TIM and that of the IGBT module at the same time. Experimental tests are performed to validate the accuracy and feasibility of the proposed method. Moreover, impacts of the junction temperature, case temperature sensing position, and thermal coupling on the monitored results are analyzed. [ABSTRACT FROM AUTHOR]