6 results on '"Wang, Tongqing"'
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2. Potassium persulfate as an oxidizer in chemical mechanical polishing slurries relevant for copper interconnects with cobalt barrier layers.
3. Material removal mechanism of copper chemical mechanical polishing in a periodate-based slurry.
4. Synergetic effect of potassium molybdate and benzotriazole on the CMP of ruthenium and copper in KIO4-based slurry.
5. Comparative study of the lubricating behavior between 12-in. copper disk and wafer during chemical mechanical polishing.
6. Electrochemical investigation of copper passivation kinetics and its application to low-pressure CMP modeling
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