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In this paper, a thin layer of high work function CuS was introduced to the interface between the anode and hole transporting layer (HTL) to modify the indium tin oxide (ITO) anode. Modified ITO substrates possess a higher work function, a lower sheet resistance and a negligible loss in transparency. More importantly, a thin layer of CuS can also benefit for the hole transporting of the device. Polymer solar cells (PSCs) utilizing modified ITO anodes exhibit a significant enhancement in power conversion efficiency ( PCE ) and air stability compared to devices with normal ITO anodes. This anode modification strategy applies to different active layer systems. Anode-modified devices with poly (3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61-butyric acid methyl ester (PC 61 BM) as the active layer exhibit a PCE of 3.5%, while poly(4,8-bis(5-(2-ethyl-hexyl)-thiophene-2-yl)-benzo[l,2-b:4,5-b′] dithiophene-alt-alkylcarbonyl-thieno[3,4-b]thiophene) (PBDTTT-C-T) and [6,6]-phenyl-C71-butyric acid methyl ester (PC 71 BM) system shows a PCE of 7.4%. As a result, this work provides a good compatibility for modification of ITO by a thin layer of CuS in PSCs to achieve better performance. [ABSTRACT FROM AUTHOR]

In this article, we in situ fabricated copper sulfide (CuS) on fluorinated tin oxide (FTO) substrate using a low temperature and low cost hydrothermal method and then organic solar cells (OSCs) were fabricated by using a thin layer of CuS film as hole transporting layer (HTL). Our CuS films, consisting of two-dimensional (2D) intersected hexagonal nanosheets, are stoichiometric and show p-type electrical conductivity, a good transparency and a high hole mobility. The Fermi level, valence and conduction band energies for CuS HTL are characterized in detail through photoelectron spectroscopy studies. The small energy barrier between the valance band of CuS and the HOMO of poly(3-hexylthiophene) (P3HT) and the high hole mobility and electrical conductivity of CuS nanosheet film benefit for the hole transporting. Therefore, CuS HTL to OSCs results in a power conversion efficiency of 3.4% with P3HT and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) as the active layer, which is a 13.3% increase in performance than devices with a poly (3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT: PSS) HTL. Therefore, low-cost, environmental friendly and stable CuS is an appropriate choice for hole transporting materials (HTMs) in OSCs. [ABSTRACT FROM AUTHOR]