1. Effects of Layer-to-Layer Coupling on the Total-Ionizing-Dose Response of 3-D-Sequentially Integrated FD-SOI MOSFETs.
- Author
-
Toguchi, Shintaro, Zhang, En Xia, Rony, Mohammed W., Luo, Xuyi, Fleetwood, Daniel M., Schrimpf, Ronald D., Moreau, Stephane, Cheramy, Severine, Batude, Perrine, Brunet, Laurent, Andrieu, Francois, and Alles, Michael L.
- Subjects
DIELECTRIC devices ,ORGANIC field-effect transistors ,COMPUTER-aided design ,ELECTRIC fields ,LOGIC circuits - Abstract
Total-ionizing-dose (TID) responses are investigated for 3-D-sequentially integrated fully depleted silicon-on-insulator (FD-SOI) MOSFETs. Strong layer-to-layer coupling of TID response is observed. The simultaneous application of positive bias to the gate of the bottom-layer device and negative bias to the top-layer device leads to the maximum enhancement of positive charge trapping in the top-layer device and the intermediate dielectric layer. This enhancement is due to the upward-directed electric field in the intermediate dielectric layer under these bias conditions. In contrast, electrostatic shielding prevents the gate bias of the top-layer device from affecting the response of the bottom-layer device, as confirmed by experiments and technology computer-aided design (TCAD) simulations. Effects of layer-to-layer coupling are less significant for postirradiation-biased annealing. [ABSTRACT FROM AUTHOR]
- Published
- 2022
- Full Text
- View/download PDF