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In order to qualitatively and quantitatively analyze the structural defects including the defect types and their concentrations in oxide heteroepitaxial films, a new X-ray rocking-curve width-fitting method was used in the case of double CeO[SUB2]/YSZ/Si (YSZ = yttria-stabilized ZrO[SUB2]) films that were prepared by pulsed laser deposition. Two main defect types, angular rotation and oriented curvature, were found in both CeO[SUB2] and YSZ. Dislocation densities of CeO[SUB2] and YSZ, which were obtained from the angular rotations, are functions of the YSZ thickness. A distinct two-step correlation between dislocation densities of CeO[SUB2] and YSZ was found that as the dislocation density of YSZ is higher than 2.4 × 10[SUP11] cm[SUP-2], the dislocation density of CeO[SUB2] shows a high sensitivity with that of YSZ compared with the low relativity in lower dislocation density (< 2.4 × 10[SUP11] cm[SUP-2]). In addition, YSZ always has higher dislocation densities and oriented curvatures than CeO[SUP2] in each specimen, which can be attributed to the smaller mosaic domain sizes in YSZ than in CeO[SUP2] as observed by high-resolution transmission electron microscopy. [ABSTRACT FROM AUTHOR]