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Dy3+-doped CaF2-SrF2 crystals with various Dy3+ dopant concentrations were synthesized by multicrucible temperature gradient technology (MC-TGT). Dy:CaF2-SrF2 crystals were fluorite structured and crystallized in cubic F m 3 ¯ m space group, as characterized by X-ray diffraction. The crystallographic site concentration was calculated from the measured density by Archimedes' hydrostatic weighing principle. The optical transmission reached over 90% with a sample thickness of 1.0 mm. The Sellmeier dispersion formula was obtained following the measured refractive index in a mid-IR range of 1.7–11 μm. Absorption coefficients of 6.06 cm−1 and 12.71 cm−1 were obtained at 804 nm and 1094 nm in 15% Dy:CaF2-SrF2 crystal. The fluorescence spectra of 15 at.% Dy:CaF2-SrF2 showed the strongest wavelength peak at 2919 nm with a full width at half maximum (FWHM) of 267 nm under an excitation wavelength of 808 nm. The fluorescence lifetimes were illustrated for different Dy3+ dopant levels of 5%, 10% and 15%. The results indicate that the Dy:CaF2-SrF2 crystal is a promising candidate for compact mid-IR lasers. [ABSTRACT FROM AUTHOR]

Cr4+:Yb3Al5O12 (Cr4+:YbAG) single crystal of high quality has been grown by the Czochralski method. X-ray powder diffraction (XRPD) experiments showed that the Cr4+:YbAG crystal had the same structure as YAG (Y3Al5O12) crystal. The data of thermal expansion and specific heat of the crystal have been measured. The thermal expansion coefficient is α=8.63×10-6/K. The specific heat is 131.8 cal/mol·K at 320.5 K. The results show that Cr4+:YbAG crystal is a promising self-Q-switched laser crystal. [Copyright &y& Elsevier]

In this paper, the Floating zone technique was used to grow high-quality Cr3+:YScO 3 crystals. The absorption cross-sections of the 4A 2 →4T 1 transition and 4A 2 →4T 2 transitions were calculated to be 1.71 × 10−20 cm2 at 488 nm and 0.72 × 10−20 cm2 at 666 nm, respectively. The crystal field strength Dq, Racah parameters B, and C were calculated to be 1502 cm−1, 533 cm−1, and 3362 cm−1, respectively. In the Cr3+:YScO 3 crystal, the effective phonon energy and Huang-Rhys factor S were calculated to be 284 cm−1 and 8.62, respectively. The emission cross-section at 988 nm corresponding to the 4T 2 →4A 2 transition was calculated to be 1.44 × 10−20 cm2 with full width at half maximum (FWHM) of 318 nm. All the results show that Cr3+:YScO 3 crystal has the potential to be a tunable and ultrafast laser crystal. • Cr:YScO 3 crystals were successfully grown by the Floating zone technique(FZ) method. • Broad emission spectrum with full width at half maximum (FWHM) of 318 nm in Cr:YScO 3 crystals was observed. • Spectral properties and crystal field parameters of Cr:YScO 3 crystals were investigated and analysed. [ABSTRACT FROM AUTHOR]

Ho3+ and Eu3+ co-doping GdScO 3 crystal was successfully grown by special EFG method. The spectroscopic properties of the crystal were measured and analyzed. The absorption cross section was calculated to be 2.027 × 10−20 cm2 at 1161 nm. The J-O theory intensity parameters Ω t (t = 2, 4, 6), radiative transition rates, fluorescence branching ratios and radiative lifetimes were calculated. The Ho,Eu:GdScO 3 crystal has very strong emission at 2869 nm and the emission cross section was 13.524 × 10−21 cm2. The fluorescence lifetimes of the 5I 7 and 5I 6 levels were measured to be 4.457 ms and 1.265 ms. Confirmed that Eu3+ can be used as an effective deactivation ion of Ho3+ in GdScO 3 crystal. All those results show that the Ho,Eu:GdScO 3 crystal would be a potential laser material for ∼3 μm mid-infrared region. • Ho,Eu:GdScO 3 crystal was successfully grown. • The spectroscopic properties of the Ho,Eu:GdScO 3 crystal were analyzed. • J-O theory was applied to analyze fluorescence properties of the Ho,Eu:GdScO 3 crystal. • The energy transfer between Ho3+ and Eu3+ ions, spectroscopic characteristic of ∼3 μm emission were calculated and analyzed. [ABSTRACT FROM AUTHOR]

Ho:Lu 2 O 3 crystal was successfully grown by TGT method. The spectroscopic properties of the crystal were analyzed. The absorption cross section of Ho:Lu 2 O 3 were 0.307 × 10−20 cm2 at 1147 nm and 1.076 × 10−20 cm2 at 1929 nm. J-O theory was applied to analyze fluorescence properties of the Ho:Lu 2 O 3 crystal. The intensity parameters Ω t (t = 2,4,6), radiative transition rates, branching ratios and radiative lifetime were calculated. The Ho:Lu 2 O 3 crystal had very strong emission at 2027 nm and 2849 nm and emission cross sections were calculated to be 3.271 × 10−21 cm2 and 8.852 × 10−21 cm2, respectively. The fluorescence lifetimes of the Ho3+5I 7 and 5I 6 levels were measured to be 12.400 ms and 0.622 ms. All those results show that the Ho: Lu 2 O 3 crystal would be a potential laser material for mid-infrared region. • Ho: Lu 2 O 3 crystal was successfully grown by TGT method. • The spectroscopic properties of the Ho: Lu 2 O 3 crystal were analyzed. • J-O theory was applied to analyze fluorescence properties of the Ho:Lu 2 O 3 crystal. • The gain cross-section of Ho:Lu 2 O 3 crystal for ∼2 μm region and ∼3 μm region were calculated. [ABSTRACT FROM AUTHOR]

Ho3+-doped GdScO 3 crystal was successfully grown by the edge-defined film-fed growth (EFG) method. The spectroscopic properties of Ho:GdScO 3 crystal were investigated at room temperature. The peak absorption cross-sections were 0.33 × 10−20 cm2 and 1.24 × 10−20 cm2 at 1160 nm and 653 nm with full widths at half maximum of 171.7 nm and 11.5 nm. The peak emission cross-sections of 5I 7 →5I 8 and 5I 6 →5I 7 transitions for the crystal were 0.49 × 10−20 cm2 and 1.24 × 10−20 cm2, respectively. The fluorescence lifetimes of the 5I 6 and 5I 7 multiplets were measured to be 1.12 ms and 6.13 ms, respectively. The results show that Ho:GdScO 3 crystal is a very promising material for 3 μm laser operation. • Ho:GdScO 3 crystal was successfully grown by the edge-defined film-fed growth (EFG) method. • The structure parameters of Ho:GdScO 3 crystal were studied by X-ray diffraction (XRD). • Spectral properties and Judd-Ofelt parameters of Ho:GdScO 3 crystal were investigated and compared. [ABSTRACT FROM AUTHOR]

GdScO 3 single crystal codoped with Tm3+ and Tb3+ ions was successfully grown by the Edge-defined Film-fed Growth Method (EFG) for the first time. Absorption, fluorescence spectrum and fluorescence lifetimes of the grown crystal at room temperature were measured. The absorption cross-section at 789 nm was calculated to be 8.20 × 10−21 cm2. The emission cross-section was 1.35 × 10−21 cm2 at 1504 nm with the FWHM of 95.3 nm. The fluorescence lifetimes of the 3H 4 state and the 3F 4 state were fitted to be 253 μs and 1460 μs, respectively. Compared with Tm3+ single doped GdScO 3 crystal, the codoping of Tb3+ successfully depopulated the 3F 4 energy level and enhanced the emission at 1.5 μm region. It indicated that Tm,Tb:GdScO 3 could be favorable laser medium for 1.5 μm-laser operation. • Tm3+ and Tb3+ co-doped GdScO 3 crystal was successfully grown by the edge-defined film-fed method (EFG) for the first time. • Spectral parameters and Judd-Ofelt parameters of Tm,Tb:GdScO3 crystal were obtained and compared. • The fluorescence mechanism of Tm3+ and Tb3+ co-doped GdScO 3 crystal has been studied. [ABSTRACT FROM AUTHOR]

LaMgAl 11 O 19 (LMA) crystal with nominal Sm3+ concentrations of 8 at.% was grown by the Czochralski method. Polarized absorption spectra, polarized emission spectra and fluorescence decay curve of Sm:LMA crystal were recorded at room temperature. The absorption cross-sections at 404 nm were calculated to be 2.33 × 10−20 cm2 and 0.86 × 10−20 cm2 for σ and π polarization, respectively. The spontaneous transition rates, branching ratios and the radiative lifetime of the 4G 5/2 multiplet, were calculated. The Judd-Ofelt theory has been applied to evaluate the Ω t (t = 2, 4, 6) intensity parameters. The highest stimulated emission cross-sections for the 4G 5/2 → 6H 7/2 transition around 594 nm were calculated to be 1.67 × 10−21 cm2 for σ polarization and 1.15 × 10−21 cm2 for π polarization, with full width at half maximum (FWHM) of 7.68 nm and 7.27 nm, respectively. The fluorescence lifetime of the 4G 5/2 manifold was 1.84 ms. All the results show that Sm:LMA crystal would be a promising orange-red solid state laser material. • The most intensive absorption line of Sm3+ ion, suitable for 405 nm InGaN laser diode. • The rigidity of Sm:LMA crystal is higher than some host crystals. • The value Ω 2 of Sm:LMA crystal is comparable to Sm:LiYF 4. • The large parameter σ em τ of Sm3+ in LMA is beneficial for the solid state laser. [ABSTRACT FROM AUTHOR]