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LiF crystal doped with magnesium (Mg), copper (Cu) and phosphorous (P) was grown in the form of multicrystalline sheet using Edge-defined film-fed growth (EFG) technique for dosimetry application. These crystals were grown in argon gas atmosphere using graphite crucible and stainless steel die. Dosimetry peak was observed at 210 °C for as-grown crystal. As reported earlier LiF:Mg, Cu, P is a highly sensitive material but losses its sensitivity if annealed at temperature above 240 °C. In this paper, the effect of annealing temperature on thermoluminescence glow-curve structure, maximum peak temperature, peak height and integrated area of the glow peak of EFG grown samples was investigated in detail. Annealing temperature range from 220 °C to 500 °C was considered for the study. Experimental results of the obtained glow curve show that with increase in annealing temperature, glow peak shift towards higher temperature region with substantial increase in TL intensity. Annealing at 500 °C for 10 min gave maximum TL intensity with main dosimetry peak positioned at 233 °C. Change in the defect structure with different pre-annealing temperature was analysed using trapping parameters. [ABSTRACT FROM AUTHOR]

Abstract: LiF crystals doped with different concentration of Mg from 0 to 2000ppm have been grown by edge defined film fed growth technique. The X-ray diffraction measurement confirms the incorporation of the Mg in the lattice. Thermoluminescence and optical absorption measurements have been made on as-grown and annealed crystals after they were irradiated with a gamma dose of 15 and 1500Gy, respectively. The TL glow peak temperature and intensity increase up to 500ppm in case of the as-grown crystals and up to 1000ppm in the annealed crystals and decrease thereafter. The normalized peak height of the annealed crystals is nearly three times that of the as grown crystals for the particular concentration. Corresponding optical absorption spectra of the crystals exhibit prominent bands at 250 and 310nm. The 310nm band increases with increase in concentration of Mg and also with annealing. The changes in the TL glow curves are correlated with those of the optical absorption bands to conclude that the 310 band is due to the Mg related Z2 center. [Copyright &y& Elsevier]

Europium (Eu) doped LiF crystals have been grown by the Edge-defined film fed growth (EFG) technique. The designing and installation of the furnace used for the growth of the crystals have been discussed in detail. In the present study, Eu (Eu 2 O 3 ) has been doped in LiF in different concentration (0.02–0.2 wt %). X-ray diffractometry (XRD) and Energy Dispersive X-ray (EDX) spectroscopy confirms the incorporation of Eu in LiF. The influence of Eu on LiF has been investigated through photoluminescence (PL), thermoluminescence (TL) and electron paramagnetic resonance (EPR) in as-grown and annealed crystals. PL emission spectra shows the presence of both Eu 3+ and Eu 2+ form in the as-grown crystals which is confirmed by EPR results. Whereas, in annealed crystals, Eu is present predominantly as Eu 2+ form. This suggests that growing crystals at high temperature (∼900 °C) in argon gas atmosphere through EFG technique favours the reduction of Eu 3+ → Eu 2+ . This reduction phenomenon has been explained on the basis of charge compensation model. TL study of the LiF: Eu (0.02–0.2 wt %) crystals has been done after irradiation with Co 60 gamma rays. In this study, it has been observed that the TL intensity as well as glow curve structure of LiF: Eu crystals are a strong function of Eu concentration. The maximum TL is observed at Eu concentration of 0.05 wt% at which a well defined glow curve structure with a prominent peak at 185 °C and a small peak at 253 °C. Beyond this concentration (0.05 wt %), TL intensity decreases due to aggregation of defects in the host. The peak at 185 °C in LiF: Eu (0.05 wt %) is certainly due to the presence of Eu 2+ associated defects which is also supported by the PL spectra. It has been observed that Eu doping have a key role in creation of more defect levels which lead to the increased number of electron and hole traps. Further, trapping parameters are analysed using glow curve deconvolution method to have an insight study of TL phenomena. Further, TL glow curve structure of as-grown and annealed crystal are distinct which may be attributed to the nature of defect traps formed inside the LiF. [ABSTRACT FROM AUTHOR]