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Amorphous carbon (a-C) films were synthesized on quartz substrates through a hot-filament chemical vapor deposition (HFCVD) method. Effect of filament temperature on the thickness, structural, morphological and electrical properties of a-C films was investigated. Both the crystalline quality and sp 2 content of a-C films increased by raising the filament temperature from 1800 °C to 2000 °C. Sharp increase of the surface roughness was observed as the filament temperature increased from 2000 °C to 2100 °C. The a-C films deposited at the filament temperature of 2000 °C with a high growth rate of 35 nm/min exhibited the optimal quality with a small roughness of 0.546 nm and a low resistivity of 1.67 × 10 −2  Ω·cm. These results indicated that HFCVD is a good method to prepare conductive a-C films rapidly and effectively. [ABSTRACT FROM AUTHOR]

CZTSSe thin films based on three-layer precursors with Cu-poor and Zn-rich in top and bottom layer while stoichiometric in middle layer were prepared. Compared with CZTSSe thin film obtained from a stoichiometric single layer precursor, the crystallization of thin film from a three-layer precursor got enhanced. Element distribution and growth nuclei position in precursor played an important role on CZTSSe thin film formation and solar cell performance. The conversion efficiency of CZTSSe solar cell from a three-layer precursor attained an increase of 3.54% over that from a single layer precursor. [ABSTRACT FROM AUTHOR]