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Abstract: Strain-induced, self-assembled iron silicide nanostructures were grown on Si(001) substrate by reactive deposition epitaxy. The phases and structures were characterized by scanning- and transmission electron microscopy, atomic force microscopy, and by Fourier transform infrared spectroscopy. The electrical characteristics were investigated by I–V and C–V measurements and the point defects were measured by DLTS. The size and shape of the nanoislands depended on the initial Fe thickness and on the annealing. Coexistence of different iron silicide phases was detected. Electrical characteristics show large defect concentration related to Fe. [Copyright &y& Elsevier]

The electrical characteristics of Al/SiO2/n-Si structures containing epitaxial β-SiC nanocrystals at the SiO2/Si interface prepared by a novel technique, namely by annealing of SiO2/Si structures in a CO-containing atmosphere at high temperatures, are compared with those of similar reference unannealed structures without SiC nanocrystals. The capacitance behaviour of structures with SiC nanocrystals exhibited features unusual for a MOS structure. However, opposite to the reference structures, there was a current flow through these structures. The current showed Schottky-like characteristics at low current level. The fact that the SiO2 layer became electrically conductive after a heat treatment in a CO-containing atmosphere, is very important for the possible optoelectronic applications of similar structures. [Copyright &y& Elsevier]

Abstract: Reactive deposition epitaxy is used for the growth of semiconducting β-FeSi2 particles on Si(001) substrate. Iron layers of thickness 6nm were deposited on Si substrates at 600°C, followed by in situ annealing at 600°C for 10, 20 and 30min. The coexistence of the equilibrium α-FeSi2, β-FeSi2 phases and the metastable γ-FeSi2 phase is revealed through transmission electron microscopy (TEM) analysis, whereas the evolution of the semiconducting β-FeSi2 phase with annealing time is investigated with infrared transmittance measurements. [Copyright &y& Elsevier]

Abstract: Semiconducting β-FeSi2 was grown on Si(001) substrates by depositing Fe layers of thickness 2, 4 and 6nm at room temperature in an ultra-high vacuum system and subsequent in situ annealing at 600°C for 15min. The phase of the grown polycrystalline β-FeSi2 was confirmed by electron diffraction and infrared reflectance measurements. Transmission electron microscopy analysis has shown that the structure of the formed β-FeSi2 is thickness dependent. For an Fe layer of thickness 2nm, β-FeSi2 nanodots with a mean diameter of about 15nm were grown, together with islands of irregular shape and linear or S-type arrays of β-FeSi2 nanodots. For thicker Fe layers, the grown β-FeSi2 consisted of continuous polycrystalline layers. [Copyright &y& Elsevier]