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1. Ultralong minority-carrier lifetimes in GaAs grown by low-pressure organometallic vapor phase epitaxy.

Author

Molenkamp, L. W., Kampschöer, G. L. M., de Lange, W., Maes, J. W. F. M., and Roksnoer, P. J.

Subjects
CRYSTAL growth, PHYSICS
Abstract

We have measured minority-carrier lifetimes of up to 4.9 μs in GaAs layers that have been grown by low-pressure organometallic vapor phase epitaxy. These lifetimes, representing a major improvement compared with previously obtained results, are governed by radiative recombination processes. Carbon incorporation during crystal growth at low arsine partial pressures is of prime importance in understanding the origin of these very long lifetimes. [ABSTRACT FROM AUTHOR]

Published
1989
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