1. Structural and interfacial properties of large area n-a-Si:H/i-a-Si:H/p-c-Si heterojunction solar cells.
- Author
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Pehlivan, Özlem, Menda, Deneb, Yılmaz, Okan, Kodolbaş, Alp Osman, Özdemir, Orhan, Duygulu, Özgür, Kutlu, Kubilay, and Tomak, Mehmet
- Subjects
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SILICON solar cells , *CRYSTAL growth , *HETEROJUNCTIONS , *TRANSMISSION electron microscopy , *MICROFABRICATION , *CURRENT-voltage characteristics - Abstract
Abstract: Growth of hydrogenated amorphous silicon in a doping inversed silicon heterojunction solar cell (n-a-Si:H/i-a-Si:H/p-c-Si) interface was investigated by High Resolution Transmission Electron Microscopy (HR-TEM), Spectroscopic Ellipsometry (SE), Fourier Transform Infrared Attenuated Total Reflection spectroscopy (FTIR-ATR) and current–voltage (I–V) measurements. Effective Medium Approximation (EMA) to the SE was used to describe breakage of epi-Si and evolution of mixture of microcrystalline and amorphous phases. Fabricated silicon heterojunction solar cells were characterized by dark and light I–V measurements at Standard Test Conditions. By improving the cleaning and deposition conditions, solar cells with 9.2% efficiency over 72cm2 total active area were obtained on p-type c-Si wafers. [Copyright &y& Elsevier]
- Published
- 2014
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