1. Growth and characterization of molecular beam epitaxy-grown Bi2Te3-xSex topological insulator alloys.
- Author
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Tung, Y., Chiang, Y. F., Chong, C. W., Deng, Z. X., Chen, Y. C., Huang, J. C. A., Cheng, C.-M., Pi, T.-W., Tsuei, K.-D., Li, Z., and Qiu, H.
- Subjects
EPITAXY ,CRYSTAL growth ,MOLECULAR beam epitaxy ,ELECTRIC insulators & insulation research ,ALLOYS - Abstract
We report a systematic study on the structural and electronic properties of Bi
2 Te3-x Sex topological insulator alloy grown by molecular beam epitaxy(MBE). A mixing ratio of Bi2 Se3 to Bi2 Te3 was controlled by varying the Bi:Te:Se flux ratio. X-ray diffraction and Raman spectroscopy measurements indicate the high crystalline quality for the as-grown Bi2 Te3-x Sex films. Substitution of Te by Se is also revealed from both analyses. The surfaces of the films exhibit terrace-like quintuple layers and their size of the characteristic triangular terraces decreases monotonically with increasing Se content. However, the triangular terrace structure gradually recovers as the Se content further increases. Most importantly, the angle-resolved photoemission spectroscopy results provide evidence of single-Dirac-cone like surface states in which Bi2 Te3-x Sex with Se/Te-substitution leads to tunable surface states. Our results demonstrate that by fine-tuned MBEgrowth conditions, Bi2 Te3-x Sex thin film alloys with tunable topological surface states can be obtained, providing an excellent platform for exploring the novel device applications based on this compound. [ABSTRACT FROM AUTHOR]- Published
- 2016
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