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Au/n-Si Schottky diodes with nearly ideal behavior were fabricated. The conduction mechanisms and bias dependent behavior of the prepared device at different temperatures were investigated experimentally hand in hand with theoretical methods. The barrier of the diode follows a Gaussian distribution consistent with thermionic emission model, which is unaffected with applied bias. The temperature dependent non-idealities in barrier height and ideality factor were explained on the basis of Si self-interstitials at the interface that has formed during the fabrication process. [ABSTRACT FROM AUTHOR]