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Zinc stannate (Zn2SnO4) films were deposited on MgO (100) substrates by pulsed laser deposition, and Zn2SnO4 monocrystalline films were obtained by postannealing process. The structures, surface morphologies, and optical properties of the Zn2SnO4 films annealed at different temperatures were investigated in detail. Crystal structure analyses showed that the film annealed at 800°C was single crystal Zn2SnO4 with an inverse‐spinel structure. The heteroepitaxial mechanism was further clarified by a schematic diagram, and the epitaxial relationships between the film and substrate were Zn2SnO4 (400)||MgO (200) with Zn2SnO4 [001]||MgO [001]. The obtained Zn2SnO4 films exhibited excellent transparency. The optical band gap of the 800°C‐annealed Zn2SnO4 film was about 3.97 eV. The extinction coefficients and refractive indexes of the Zn2SnO4 films annealed at different temperatures as a function of wavelength were analyzed in detail. [ABSTRACT FROM AUTHOR]

We epitaxially grew 7 mol. % Nd-doped BaSnO3 (NBSO) thin films on double-side polished SrTiO3 (001) single-crystal substrates and optimized the oxygen pressure (PO2), substrate temperature (TS), and film thickness (t) to achieve excellent structural, optical, and electrical performance. By keeping TS (=800 °C) constant, NBSO films prepared at PO2 = 10 Pa show the best crystallization, yielding a full-width at half-maximum (FWHM) of the x-ray diffraction rocking curve of 0.079° and exhibiting a room-temperature resistivity (ρ) of ∼1.85 mΩ cm and a volume carrier density (n) of ∼8.5 × 1020/cm3. By keeping PO2 (=10 Pa) constant, the room-temperature ρ of NBSO films could be reduced to as low as 0.5 mΩ cm by increasing TS from 700 to 825°; meanwhile, the volume carrier density and mobility show the maximum of 5.04 × 1020/cm3 and 24.9 cm2/Vs, respectively, for TS = 825 °C. For all as-grown NBSO thin films, the optical transmittance in the visible wavelength region is larger than 80%. The optimized comprehensive properties of the NBSO films with FWHM = 0.11°, ρ = 0.5 mΩ cm, μ = 24.9 cm2/Vs, and T > 80% are superior to those of other rare-earth and 4d- and 5d-transition metal-doped BaSnO3 thin films. [ABSTRACT FROM AUTHOR]

C16H15FN2O2, monoclinic, P21/c (no. 14), a = 6.0573(3) Å, b = 13.8341(6) Å, c = 33.0876(15) Å, β = 92.837(2)°, Z = 8, V = 2769.3(2) Å3, Rgt(F) = 0.0581, wRref(F2) = 0.1605, T = 173(2) K. [ABSTRACT FROM AUTHOR]

C16H15FN2O2, monoclinic, P21/c (no. 14), a = 6.0573(3) Å, b = 13.8341(6) Å, c = 33.0876(15) Å, β = 92.837(2)°, Z = 8, V = 2769.3(2) Å3, Rgt(F) = 0.0581, wRref(F2) = 0.1605, T = 173(2) K. [ABSTRACT FROM AUTHOR]

C92H84Cu2N8O8, monoclinic, P21/c (no. 14), a = 18.315(2) Å, b = 12.1533(12) Å, c = 17.518(2) Å, β = 105.289(4)°, Z = 2, V = 3761.3(7) Å3, Rgt(F) = 0.0658, wRref(F2) = 0.1809, T = 173(2)K. [ABSTRACT FROM AUTHOR]

C68H68Cu2N8O8, monoclinic, P21/c, a = 16.241(3) Å, b = 12.1604(19) Å, c = 15.531(3) Å, β = 96.364(3)°, Z = 2, V = 3048.3(9) Å3, Rgt(F) = 0.0497, wRref(F2) = 0.1263, T = 296(2)K. [ABSTRACT FROM AUTHOR]

C44H38CuN4O4, monoclinic, P21/n (no. 14), a = 8.0172(13) Å, b = 10.9003(17) Å, c = 42.154(8) Å, β = 94.749(6)°, Z = 4, V = 3671.2(11) Å3, Rgt(F) = 0.0483, wRref(F2) = 0.1072, T = 173(2)K. [ABSTRACT FROM AUTHOR]

C68H68Cu2N8O8, monoclinic, P21/c, a = 16.241(3) Å, b = 12.1604(19) Å, c = 15.531(3) Å, β = 96.364(3)°, Z = 2, V = 3048.3(9) Å3, Rgt(F) = 0.0497, wRref(F2) = 0.1263, T = 296(2)K. [ABSTRACT FROM AUTHOR]

C92H84Cu2N8O8, monoclinic, P21/c (no. 14), a = 18.315(2) Å, b = 12.1533(12) Å, c = 17.518(2) Å, β = 105.289(4)°, Z = 2, V = 3761.3(7) Å3, Rgt(F) = 0.0658, wRref(F2) = 0.1809, T = 173(2)K. [ABSTRACT FROM AUTHOR]

C44H38CuN4O4, monoclinic, P21/n (no. 14), a = 8.0172(13) Å, b = 10.9003(17) Å, c = 42.154(8) Å, β = 94.749(6)°, Z = 4, V = 3671.2(11) Å3, Rgt(F) = 0.0483, wRref(F2) = 0.1072, T = 173(2)K. [ABSTRACT FROM AUTHOR]

C40H34N4NiO4, monoclinic, P21/c (no. 14), a = 21.443(7) Å, b = 13.862(5) Å, c = 11.733(4) Å, β = 103.690(5)°, Z = 4, V = 3388(2) Å3, Rgt(F) = 0.0484, wRref(F2) = 0.1411, T = 296(2) K. [ABSTRACT FROM AUTHOR]

C34H34N4NiO6, monoclinic, P21/c (no. 14), a = 10.5538(5) Å, b = 6.1691(2) Å, c = 24.2831(9) Å, β = 100.519(4)°, Z = 2, V = 1554.43(11) Å3, Rgt(F) = 0.0402, wRref(F2) = 0.0973, T = 294.39(10) K. [ABSTRACT FROM AUTHOR]

C16H16N2O3, triclinic, P1̄ (no. 2), a = 8.7904(7) Å, b = 12.0808(11) Å, c = 14.3999(11) Å, α = 68.001(8)°, β = 81.114(6)°, γ = 83.933(7)°, Z = 4, V = 1398.9(2) Å3, Rgt(F) = 0.0658, wRref(F2) = 0.1827, T = 290.83(10) K. [ABSTRACT FROM AUTHOR]

C18H20N2O2, monoclinic, Pc (no. 7), a = 17.8843(15) Å, b = 7.1821(6) Å, c = 6.3086(6) Å, β = 98.487(3)°, Z = 2, V = 801.45(12) Å3, Rgt(F) = 0.0533, wRref(F2) = 0.1411, T = 296(2) K. [ABSTRACT FROM AUTHOR]

C40H34N4NiO4, monoclinic, P21/c (no. 14), a = 21.443(7) Å, b = 13.862(5) Å, c = 11.733(4) Å, β = 103.690(5)°, Z = 4, V = 3388(2) Å3, Rgt(F) = 0.0484, wRref(F2) = 0.1411, T = 296(2) K. [ABSTRACT FROM AUTHOR]

C16H16N2O3, triclinic, P1̄ (no. 2), a = 8.7904(7) Å, b = 12.0808(11) Å, c = 14.3999(11) Å, α = 68.001(8)°, β = 81.114(6)°, γ = 83.933(7)°, Z = 4, V = 1398.9(2) Å3, Rgt(F) = 0.0658, wRref(F2) = 0.1827, T = 290.83(10) K. [ABSTRACT FROM AUTHOR]

C34H34N4NiO6, monoclinic, P21/c (no. 14), a = 10.5538(5) Å, b = 6.1691(2) Å, c = 24.2831(9) Å, β = 100.519(4)°, Z = 2, V = 1554.43(11) Å3, Rgt(F) = 0.0402, wRref(F2) = 0.0973, T = 294.39(10) K. [ABSTRACT FROM AUTHOR]

C36H38CuN4O4, triclinic, P1̄, a = 8.492(2) Å, b = 9.574(2) Å, c = 10.512(2) Å, α = 100.170(7)°, β = 103.421(7)°, γ = 95.055(8)°, Z = 1, V = 810.8(3) Å3, Rgt(F) = 0.0418, wRref(F2) = 0.1193, T = 296(2) K. [ABSTRACT FROM AUTHOR]

C18H20N2O2, monoclinic, Pc (no. 7), a = 17.8843(15) Å, b = 7.1821(6) Å, c = 6.3086(6) Å, β = 98.487(3)°, Z = 2, V = 801.45(12) Å3, Rgt(F) = 0.0533, wRref(F2) = 0.1411, T = 296(2) K. [ABSTRACT FROM AUTHOR]

The primary role of yeast Ara1, previously mis-annotated as a D-arabinose dehydrogenase, is to catalyze the reduction of a variety of toxic α,β-dicarbonyl compounds using NADPH as a cofactor at physiological pH levels. Here, crystal structures of Ara1 in apo and NADPH-complexed forms are presented at 2.10 and 2.00 Å resolution, respectively. Ara1 exists as a homodimer, each subunit of which adopts an (α/β)8-barrel structure and has a highly conserved cofactor-binding pocket. Structural comparison revealed that induced fit upon NADPH binding yielded an intact active-site pocket that recognizes the substrate. Moreover, the crystal structures combined with computational simulation defined an open substrate-binding site to accommodate various substrates that possess a dicarbonyl group. [ABSTRACT FROM AUTHOR]

Phosphoribosyl pyrophosphate synthetase isoform 1 (PRS1) has an essential role in the de novo and salvage synthesis of human purine and pyrimidine nucleotides. The dysfunction of PRS1 will dramatically influence nucleotides' concentration in patient's body and lead to different kinds of disorders (such as hyperuricemia, gout and deafness). The D52H missense mutation of PRS1 will lead to a conspicuous phosphoribosyl pyrophosphate content elevation in the erythrocyte of patients and finally induce hyperuricemia and serious gout. In this study, the enzyme activity analysis indicated that D52H-mutant possessed similar catalytic activity to the wild-type PRS1, and the 2.27 Å resolution D52H-mutant crystal structure revealed that the stable interaction network surrounding the 52 position of PRS1 would be completely destroyed by the substitution of histidine. These interaction variations would further influence the conformation of ADP-binding pocket of D52H-mutant and reduced the inhibitor sensitivity of PRS1 in patient's body. © 2013 IUBMB Life, 65(6):518-525, 2013. [ABSTRACT FROM AUTHOR]

Abstract: Ga2O3 thin films have been deposited on sapphire (0001) substrates at different substrate temperatures by metal-organic chemical vapor deposition. Trimethylgallium and oxygen were used as precursors for gallium and oxygen, respectively. Structural and optical properties of the films have been investigated. X-ray diffraction and high resolution transmission electron microscopy measurements identified an epitaxial relationship of β-Ga2O3 ()||Al2O3 (0001) with β-Ga2O3<010>||Al2O3<> and β-Ga2O3<102>||Al2O3<>. The average transmittance of the obtained films in the visible wavelength range was over 92.3% and the band gap was about 4.73–4.96 eV. [Copyright &y& Elsevier]

Abstract: Epitaxial In2O3 films have been deposited on Y-stabilized ZrO2 (YSZ) (100) substrates by metalorganic chemical vapor deposition (MOCVD). The films were deposited at different substrate temperatures (450–750°C). The film deposited at 650°C has the best crystalline quality, and observation of the interface area shows a clear cube-on-cube epitaxial relationship of In2O3(100)||YSZ(100) with In2O3[001]||YSZ[001]. The Hall mobility of the single-crystalline In2O3 film deposited at 650°C is as high as 66.5cm2 V−1 s−1 with carrier concentration of 1.5×1019 cm−3 and resistivity of 6.3×10−3 Ωcm. The absolute average transmittance of the obtained films in the visible range exceeds 95%. [ABSTRACT FROM AUTHOR]

C34H32Br2Cl4CoN4O4, monoclinic, C2/c (no. 15), a = 30.281(3) Å, b = 8.9971(8) Å, c = 13.9050(13) Å, β = 107.053(5)°, Z = 4, V = 3621.7(6) Å3, Rgt(F) = 0.0648, wRref(F2) = 0.1629, T = 173(2) K. [ABSTRACT FROM AUTHOR]

C16H15BrN2O2, monoclinic, P21 (no. 4), a = 10.9311(8) Å, b = 3.9554(3) Å, c = 16.5215(12) Å, β = 92.743(2)°, V = 713.52(9) Å3, Z = 2, Rgt(F) = 0.0335, wRref(F2) = 0.0655, T = 173(2) K. [ABSTRACT FROM AUTHOR]

C34H32Br2Cl4CoN4O4, monoclinic, C2/c (no. 15), a = 30.281(3) Å, b = 8.9971(8) Å, c = 13.9050(13) Å, β = 107.053(5)°, Z = 4, V = 3621.7(6) Å3, Rgt(F) = 0.0648, wRref(F2) = 0.1629, T = 173(2) K. [ABSTRACT FROM AUTHOR]

C16H15BrN2O2, monoclinic, P21 (no. 4), a = 10.9311(8) Å, b = 3.9554(3) Å, c = 16.5215(12) Å, β = 92.743(2)°, V = 713.52(9) Å3, Z = 2, Rgt(F) = 0.0335, wRref(F2) = 0.0655, T = 173(2) K. [ABSTRACT FROM AUTHOR]

C16H14Cl2N2O2, monoclinic, P21/c (no. 14), a = 7.9157(6) Å, b = 13.4533(8) Å, c = 14.8459(10) Å, β = 103.651(2)°, V = 1536.31(18) Å3, Z = 4, Rgt(F) = 0.0410, wRref(F2) = 0.1162, T = 296(2) K. [ABSTRACT FROM AUTHOR]

C16H14Cl2N2O2, monoclinic, P21/c (no. 14), a = 7.9157(6) Å, b = 13.4533(8) Å, c = 14.8459(10) Å, β = 103.651(2)°, V = 1536.31(18) Å3, Z = 4, Rgt(F) = 0.0410, wRref(F2) = 0.1162, T = 296(2) K. [ABSTRACT FROM AUTHOR]

C16H16N2O3, monoclinic, P21/c (no. 14), a = 12.929(13) Å, b = 11.966(12) Å, c = 9.742(9) Å, β = 107.449(19)°, Z = 4, V = 1438(2) Å3, Rgt(F) = 0.0515, wRref(F2) = 0.1767, T = 296(2) K. [ABSTRACT FROM AUTHOR]

C16H16N2O3, monoclinic, P21/c (no. 14), a = 12.929(13) Å, b = 11.966(12) Å, c = 9.742(9) Å, β = 107.449(19)°, Z = 4, V = 1438(2) Å3, Rgt(F) = 0.0515, wRref(F2) = 0.1767, T = 296(2) K. [ABSTRACT FROM AUTHOR]

C16H15ClN2O2, monoclinic, P21/c (no. 14), a = 33.491(11) Å, b = 7.124(2) Å, c = 6.1977(19) Å, β = 92.212(6)°, V = 1477.6(8) Å3, Z = 4, Rgt(F) = 0.0418, wRref(F2) = 0.1193, T = 296(2) K. [ABSTRACT FROM AUTHOR]

C16H15ClN2O2, monoclinic, P21/c (no. 14), a = 33.491(11) Å, b = 7.124(2) Å, c = 6.1977(19) Å, β = 92.212(6)°, V = 1477.6(8) Å3, Z = 4, Rgt(F) = 0.0418, wRref(F2) = 0.1193, T = 296(2) K. [ABSTRACT FROM AUTHOR]

Highly ordered, multi-layered, regular hexagonally patterned and size controlled honeycomb magnetic chitosan hydrogel beads were successfully fabricated by a facile method combining breath-figure templating and co-precipitation processing. The chitosan honeycomb beads were characterized and the unique structure formation mechanism was outlined. The diameter of pores in the hexagonally patterned structure was ∼10 μm, and the saturation magnetization of the chitosan honeycomb containing Fe 3 O 4 nanoparticles ( ca. 5 ± 2 nm) was around 12 emu/g. [ABSTRACT FROM AUTHOR]

C36H38CuN4O4, triclinic, P1̄, a = 8.492(2) Å, b = 9.574(2) Å, c = 10.512(2) Å, α = 100.170(7)°, β = 103.421(7)°, γ = 95.055(8)°, Z = 1, V = 810.8(3) Å3, Rgt(F) = 0.0418, wRref(F2) = 0.1193, T = 296(2) K. [ABSTRACT FROM AUTHOR]

Summary: We have solved two families of crystal structures of the human Dicer “platform-PAZ-connector helix” cassette in complex with small interfering RNAs (siRNAs). The structures possess two adjacently positioned pockets: a 2 nt 3′-overhang-binding pocket within the PAZ domain (3′ pocket) and a phosphate-binding pocket within the platform domain (phosphate pocket). One family of complexes contains a knob-like α-helical protrusion, designated “hDicer-specific helix,” that separates the two pockets and orients the bound siRNA away from the surface of Dicer, which could be indicative of a product release/transfer state. In the second complex, the helical protrusion is melted/disordered and the bound siRNA is aligned toward the surface of Dicer, suggestive of a cleavage-competent state. These structures allow us to propose that the transition from the cleavage-competent to the postulated product release/transfer state may involve release of the 5′-phosphate from the phosphate pocket while retaining the 3′ overhang in the 3′ pocket. [Copyright &y& Elsevier]

Abstract: The reactions of a thiazolylazo ligand, 2-(2-thiazolylazo)-5-diethylaminophenol (HL) with zinc(II) chloride, nickel(II) acetate and cobalt(II) acetate resulted in the formation of the corresponding mononuclear coordination complexes, 1–3, both in solution and in the solid state. UV–Vis titration experiments in solution confirmed that the ligand and given metal salts interacted spontaneously with each other, producing exclusively mononuclear complexes with a metal/ligand ratio of 1:2. The solid-state structures of complexes 1 and 2 were determined by single-crystal X-ray diffraction analysis. In the structure of 1, zinc(II) ion is tetra-coordinate to two N atoms from the thiazolyl groups of two distinct HL ligands and two chloride counterions with a distorted tetrahedral geometry. In the structure of 2, the nickel ion is bound to four N atoms from both the thiazolyl groups and azo group moieties, and two O atoms from the phenol groups with a hexacoordinated mode. The third-order nonlinear optical (NLO) properties of both HL and 1–3 were studied by Z-scan technique in CHCl3 solution. The results showed that all four compounds exhibited strong nonlinear refraction, while complex 2 featured both large nonlinear absorption and refraction. The nonlinear refractive index values n 2 of four compounds vary in the range of −1.20×10−18 to −3.42×10−18 m2/W. Their hyperpolarizability γ values are determined to be 2.01×10−35, 1.13×10−34, 2.09×10−34, and 7.83×10−34 esu for HL and 1–3, respectively, indicating that metal chelating did lead to considerable enhancement in third-order optical nonlinearities. [Copyright &y& Elsevier]

A novel silver complex bearing a rectangle metallomacrocyclic structure has been obtained by reaction of 1,3-bis(pyrrol-2-yl-methyleneamino)propane (L) with silver nitrate, which displayed photoluminescence feature in both solution and the solid state. [Copyright &y& Elsevier]

Gallium oxide (Ga 2 O 3 ) films were grown on epi-GaN/sapphire (0001) substrates by the metalorganic chemical vapor deposition (MOCVD) method, followed by a post-deposition thermal annealing at different temperatures of 800, 900 and 1000 ℃ for one hour in air. X-ray diffraction (XRD, both θ ~2 θ and Φ scans) and transmission electron microscopy (TEM) were used to inspect the lattice structure and epitaxial relationship. With the increase of annealing temperature, the film structure changed from amorphous to single crystalline and then to polycrystalline. A single crystalline β -Ga 2 O 3 film with the best crystalline quality was obtained under the annealing condition at 900 ℃, and a clear epitaxial relationship of β -Ga 2 O 3 (100)‖GaN(0001) with β -Ga 2 O 3 < 010 > ‖GaN < 1 ¯ 2 1 ¯ 0 > and β -Ga 2 O 3 < 001 > ‖GaN < 1 ¯ 010 > was determined. The elemental composition and proportion of the 900 ℃-annealed film were investigated by the X-ray photoelectron spectroscopy (XPS) measurements and the atomic ratio of Ga/O was about 0.69, which was close to stoichiometric Ga 2 O 3 . For the sample annealed at 900 ℃, the average transmittance in the visible wavelength region was about 78% and the average reflectivity in the 200–800 nm wavelength range was about 18%. [ABSTRACT FROM AUTHOR]

Titania (TiO 2 ) films were synthesized on MgAl 6 O 10 (100) substrates by high vacuum metalorganic chemical vapor deposition (MOCVD). The crystal structures, surface and interface morphologies as well as the optical properties of the obtained TiO 2 films depending on substrate temperature were studied in detail. A single-crystal anatase TiO 2 (a-TiO 2 ) film was obtained at the substrate temperature of 550 °C. The epitaxial relationship between the a-TiO 2 film and MgAl 6 O 10 (100) substrate was a-TiO 2 (001) || MgAl 6 O 10 (100) with a-TiO 2 [100] || MgAl 6 O 10 [001]. The a-TiO 2 film showed an average transmittance of 95.1% in the visible range, and an optical band gap of 3.46 eV. The refractive indexes and extinction coefficients of the obtained TiO 2 films as a function of wavelength were analyzed. A broad photoluminescence peak centered at 535 nm was observed at room temperature and the corresponding luminescence mechanisms were discussed. [ABSTRACT FROM AUTHOR]

Novel indium-doped brookite phase TiO 2 films with different In concentrations were successfully prepared on the yttria-stabilized zirconia (YSZ) (110) substrates by the metal organic chemical vapor deposition (MOCVD) technique. The structural, morphological, electrical and optical properties of the films were investigated in detail. X-ray diffraction analysis revealed that all the films with different In concentrations were pure brookite phase TiO 2 with only one orientation along the b-TiO 2 (120) direction. The resistivity of the films was reduced by almost eight orders of magnitude by In doping with the lowest resistivity of 7.4 × 10 −2 Ω⋅cm and a mobility of 8.3 cm 2 V −1 s −1 obtained for the 2.6% In-doped b-TiO 2 film. The average optical transmittance of the 2.6% In-doped sample exceeded 74% in the visible range and the optical band gap was about 3.60 eV. [ABSTRACT FROM AUTHOR]

High-quality single-crystal anatase TiO 2(a-TiO 2) thin films have been obtained on SrTiO 3 (STO) substrates using the metalorganic chemical vapor deposition (MOCVD) method. The optimal preparation process was explored. The lattice structure and epitaxial relationship were investigated by X-ray diffraction (XRD, both θ −2 θ and Φ scans) and transmission electron microscopy (TEM). The results indicated that the film prepared at 550 °C with the Ti precursor molar flow rate of 4×10 −7 mol/min had the best single crystalline quality, for which a clear epitaxial relationship of a-TiO 2 (001)||STO (100) with a-TiO 2 [100]||STO [001¯] could be inferred. The elemental composition and proportion were studied by the X-ray photoelectron spectroscopy (XPS) method, which proved the deposited film approximated stoichiometric TiO 2 . The samples showed high transparency of 70–80% in the visible range. [ABSTRACT FROM AUTHOR]

The Mg-doped Ga 2 O 3 (Ga 2 O 3 :Mg) films have been prepared on the α-Al 2 O 3 (0001) substrates by metalorganic chemical vapor deposition (MOCVD). The Mg doping was varied from 0 to 10% (atomic ratio). The effect of annealing on the structural, electrical and optical properties of the films was investigated in detail. After annealing, the 0–3% Mg-doped films changed from amorphous to polycrystalline structure of monoclinic β-Ga 2 O 3 with a single orientation along the ( 2 ¯ 01 ) direction, while no obvious phase transition was observed for the rest of the samples. The average transmittances for the Ga 2 O 3 :Mg films in the visible range were over 90%, with an obvious increase observed in the ultraviolet (UV) region around 300 nm after annealing. Tunable optical band gap from 4.96 to 5.4 eV was obtained before annealing, which varied in a different range of 4.88–5.36 eV after annealing. [ABSTRACT FROM AUTHOR]

Al 2 x In 2−2 x O 3 films with different x vapor values [Al/(Al+In) precursor input ratios] have been deposited on Y-stabilized ZrO 2 (1 1 1) substrates by metal organic chemical vapor deposition (MOCVD) at 600 °C. The influence of different Al contents ( x vapor =0.1–0.9) on the structural, optical and electrical properties of the films was investigated in detail. A phase transition from the bixbyite In 2 O 3 structure with a single orientation along (1 1 1) to the amorphous structure was observed for the films with the increase of x vapor value from 0.1 to 0.9. The average transmittances in the visible range for the Al 2 x In 2−2 x O 3 films were all over 77% and the optical band gap of the films varied from 3.64 to 4.81 eV. The lowest resistivity of 9×10 −3 Ω cm, a carrier concentration of 8.2×10 19 cm −3 and a Hall mobility of 8.5 cm 2 V −1 s −1 were obtained for the film with x vapor =0.2. [ABSTRACT FROM AUTHOR]

The ternary Al 2 x In 2−2 x O 3 films with different Al contents of x [Al/(Al + In) atomic ratio] have been fabricated on the Y-stabilized ZrO 2 (YSZ) (1 0 0) substrates by the metal organic chemical vapor deposition (MOCVD) method at 700 °C. The influence of various Al contents ( x = 0.1–0.9) on the structural, electrical and optical properties of the films have been investigated. Structural analyses revealed a phase transition from the bixbyite In 2 O 3 structure with a single orientation along (1 0 0) to the amorphous structure as the Al content increases from 10% to 90%. The lowest resistivity of 4.84 × 10 −3 Ω cm with a carrier concentration of 1.1 × 10 20 cm −3 and a Hall mobility of 11.74 cm 2 V −1 s −1 were obtained for the sample with x = 0.2. The average transmittances for the Al 2 x In 2−2 x O 3 films in the visible range were all over 77% and the optical band gap of the films could be modulated from 3.67 to 4.73 eV. [ABSTRACT FROM AUTHOR]