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The authors report the relationship between HfO2 crystalline phase and the resulting electrical properties. Crystallization of amorphous HfO2 into the monoclinic phase led to a significant increase in leakage current and formation of local defects. Admixture of 10% SiO2 avoided formation of these defects by stabilization of the tetragonal phase, and concurrently increased the permittivity to 35. This understanding enabled fabrication of crystalline HfO2 based metal-insulator-metal capacitors able to withstand a thermal budget of 1000 °C while optimizing capacitance equivalent thickness (<1.3 nm) at low leakage [J(1 V)<10-7 A/cm2]. [ABSTRACT FROM AUTHOR]