1. Growth and physical characterization of high resistivity Fe: β-Ga2O3 crystals.
- Author
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Zhang, Hao, Tang, Hui-Li, He, Nuo-Tian, Zhu, Zhi-Chao, Chen, Jia-Wen, Liu, Bo, and Xu, Jun
- Subjects
FIELD-effect transistors ,CRYSTALS ,CRYSTAL structure ,THERMAL properties ,METAL organic chemical vapor deposition ,SINGLE crystals - Abstract
High quality 0.02 mol%, 0.05 mol%, and 0.08 mol% Fe: β-Ga
2 O3 single crystals were grown by the floating zone method. The crystal structure, optical, electrical, and thermal properties were measured and discussed. Fe: β-Ga2 O3 single crystals showed transmittance of higher than 80% in the near infrared region. With the increase of the Fe doping concentration, the optical bandgaps reduced and room temperature resistivity increased. The resistivity of 0.08 mol% Fe: β-Ga2 O3 crystal reached to 3.63 × 1011 Ω ⋅cm. The high resistivity Fe: β-Ga2 O3 single crystals could be applied as the substrate for the high-power field effect transistors (FETs). [ABSTRACT FROM AUTHOR]- Published
- 2020
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