1. Right-Angle Black Phosphorus Tunneling Field Effect Transistor.
- Author
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Robbins, Matthew C., Golani, Prafful, and Koester, Steven J.
- Subjects
FIELD-effect transistors ,QUANTUM tunneling ,CRYSTAL orientation ,PHOSPHORUS - Abstract
We report experimental demonstration of a right-angle black phosphorus (BP) tunneling field effect transistor (TFET). This device utilizes the effective mass anisotropy between the armchair (AC) and zigzag (ZZ) crystal orientations in BP as a means of inducing asymmetry between source and drain tunneling. As a result of this asymmetry, the BP TFET displays a higher ${I}_{ \mathrm{\scriptscriptstyle ON}} / {I}_{ \mathrm{\scriptscriptstyle OFF}}$ ratio by 2 orders of magnitude and steeper SS than BP TFETs oriented along either the AC or ZZ direction only. [ABSTRACT FROM AUTHOR]
- Published
- 2019
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